Electronic topological transition in an n-BiSb semiconductor alloy in the quantum limit range of magnetic fields for H| C.

Red'ko, N. A.; Kagan, V. D.; Volkov, M. P.

The galvanomagnetic properties of single-crystal samples of the BiSb semiconductor alloy with the electron density n = 1.6 × 10 cm in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity ρ and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components ρ and R have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance ρ( H) for H | C in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of secondary ellipsoids in the quantum limit magnetic fields is accompanied by the flow of electrons to the main ellipsoid; i.e., an electronic topological transition occurs from the three-valley electron spectrum to the single-valley one. After the flow stops, the Fermi energy E increases from 18 meV to 27.8 meV. With an increase in the quantizing magnetic field, the Fermi energy of the electrons decreases both in the region of quantum oscillations of the resistance that are attributed to the electrons of the secondary ellipsoids and in the region of oscillations associated with the electrons of the main ellipsoid. The Hall coefficient R decreases in high magnetic fields; this behavior indicates the absence of the electron magnetic freezing effect.

TOPOLOGICAL transformation groups; SEMICONDUCTORS; ELECTRON distribution; ANISOTROPY; MAGNETIC fields

Journal of Experimental & Theoretical Physics, 2010, Vol 111, Issue 2, p241

1063-7761

Academic Journal

10.1134/S1063776110080145