Structure and photosensitive homojunctions based on PbSnSe epitaxial films.

Nuriev, I.; Nazarov, A.; Faradzhev, N.

The growth of epitaxial films of PbSnSe solid solutions of different chemical compositions ( x = 0.02-0.05) on freshly cleaved BaF(111) faces and the structure of these films have been investigated. Photosensitive p- n homojunctions have been prepared on their basis. The homojunctions are fabricated in a unified technological cycle without breaking vacuum based on n- and p-type films of high structural quality ( W = 90-100″) that were grown using an additional selenium vapor source. The photosensitivity peak is found to shift to longer wavelengths with an increase in the Sn content in the films grown; this effect is explained by narrowing the band gap with a change in the composition.

CRYSTAL structure; SOLID solutions; EPITAXY; WAVELENGTHS; SELENIUM; BAND gaps; PHOTOCHEMISTRY

Crystallography Reports, 2012, Vol 57, Issue 2, p296

1063-7745

Academic Journal

10.1134/S1063774512020149