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- Title
Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.
- Authors
Kravchuk, K.; Mezhennyi, M.; Yugova, T.
- Abstract
The change in the dislocation density on the surface of GaN epitaxial layers, which were grown by hydride vapor-phase epitaxy on sapphire substrates with c and r orientations, has been investigated by optical and atomic force microscopy (AFM). It is shown that the observed decrease in the density of threading dislocations with an increase in the layer thickness is related to the annihilation of mixed dislocations. The experimental and theoretical data on the change in the density of mixed dislocations with an increase in the epitaxial-layer thickness are in good correspondence.
- Subjects
DISLOCATIONS in crystals; EPITAXY; THICKNESS measurement; ATOMIC force microscopy; VAPOR-plating; SURFACE chemistry
- Publication
Crystallography Reports, 2012, Vol 57, Issue 2, p277
- ISSN
1063-7745
- Publication type
Academic Journal
- DOI
10.1134/S1063774512020113