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Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140
By:
- Mezhennyi, M.;
- Mil’vidskii, M.;
- Reznik, V.
Publication type:
Article
Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039
By:
- Govorkov, A.;
- Polyakov, A.;
- Yugova, T.;
- Smirnov, N.;
- Petrova, E.;
- Mezhennyi, M.;
- Markov, A.;
- Lee, I.;
- Pearton, S.
Publication type:
Article
Evaluating intrinsic deformations in oxygen-containing precipitates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065
By:
- Goldstein, R. V.;
- Ustinov, K. B.;
- Shushpannikov, P. S.;
- Mezhennyi, M. V.;
- Mil'vidskiĭ, M. G.;
- Reznik, V. Ya.
Publication type:
Article
Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.
Published in:
Crystallography Reports, 2012, v. 57, n. 2, p. 277, doi. 10.1134/S1063774512020113
By:
- Kravchuk, K.;
- Mezhennyi, M.;
- Yugova, T.
Publication type:
Article
Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.
Published in:
Crystallography Reports, 2011, v. 56, n. 2, p. 274, doi. 10.1134/S1063774511020052
By:
- Donskov, A.;
- Dyakonov, L.;
- Kozlova, Yu.;
- Malakhov, S.;
- Mezhennyi, M.;
- Pavlov, V.;
- Yugova, T.
Publication type:
Article
Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
Published in:
Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
By:
- Verezub, N. A.;
- Prostomolotov, A. I.;
- Mezhennyǐ, M. V.;
- Mil'vidskiǐ, M. G.;
- Reznik, V. Ya.
Publication type:
Article

Found: 6

Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.

Evaluating intrinsic deformations in oxygen-containing precipitates.

Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.

Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.

Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.