Modeling of optical spectroscopy for the crystalline silicon.

Liu, Changshi

The paper is aimed at modeling optical spectra of silicon. Optical spectra of silicon are described with the Logistic function. A satisfactory agreement between the measured and the modeled optical spectra are obtained. The minimum magnitude of the correlation coefficient between experiment and theoretical results is 0.994, and the maximum average relative error is 4.21%. Meanwhile, it is found that the band gap of semiconductor may be determined by fitting absorption coefficient as a function of wavelength. Lastly, the mathematical relationships between the parameters, which are used to link the reflectance of silicon and wavelength, and radiation fluency, are obtained. Consequently, the change of reflectance for silicon can be predicted by both wavelength and dose radiation fluency only one function. All results in this paper are of interest from both optics and materials point of view.

SILICON crystals; OPTICAL spectroscopy; OPTICAL spectra; OPTICAL properties of metals; ENERGY bands

Optics & Spectroscopy, 2014, Vol 116, Issue 3, p387

0030-400X

Academic Journal

10.1134/S0030400X14030114