Works matching DE "IMPURITY distribution in semiconductors"
Results: 160
Potential Impurity Effect in Twisted Bilayer Graphene.
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- Progress in Physics / Wulixue Jinzhan, 2023, v. 43, n. 5, p. 151, doi. 10.13725/j.cnki.pip.2023.05.003
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Limiting impurity distribution during zone refining.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 460, doi. 10.1134/S1063785014060029
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Method of selective doping of silicon by segregating impurities.
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- Technical Physics Letters, 2011, v. 37, n. 9, p. 824, doi. 10.1134/S106378501109015X
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Dynamics of smoke transfer from a localized source by a tornado-like vortex.
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- Technical Physics Letters, 2009, v. 35, n. 8, p. 717, doi. 10.1134/S1063785009080094
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An Analytical Model of the Diffusion Redistribution of Ion-Implanted Impurity in the Gate Region of a MOS Transistor.
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- Technical Physics Letters, 2003, v. 29, n. 1, p. 47, doi. 10.1134/1.1544345
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Peculiarities in the Ion Etching of Heterophase Semiconductors under Illumination with White Light.
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- Technical Physics Letters, 2003, v. 29, n. 1, p. 51, doi. 10.1134/1.1544346
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Impurity detection in polymer parts for the semiconductor manufacturing industry.
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- Technisches Messen, 2018, v. 85, n. 11, p. 700, doi. 10.1515/teme-2018-0056
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Impurity quantum phase transitions.
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- Philosophical Magazine, 2006, v. 86, n. 13/14, p. 1807, doi. 10.1080/14786430500070396
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THE MONTE-CARLO SIMULATION OF TRANSPORT IN QUANTUM WELL GaAs/AlGaAs HETEROSTRUCTURE DOPED WITH SHALLOW DONORS UNDER IMPURITY BREAKDOWN.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 253, doi. 10.1142/S0219581X0700447X
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Far infrared study of local impurity modes of Boron-doped PbTe.
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- Journal of Materials Science, 2012, v. 47, n. 5, p. 2384, doi. 10.1007/s10853-011-6057-8
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On Dipole Moment of Impurity Carbon Nanotubes.
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- Russian Physics Journal, 2017, v. 59, n. 12, p. 2137, doi. 10.1007/s11182-017-1025-7
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Solubility of substitution atoms in homogeneously deformed solid interstitial cubic solutions.
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- Russian Physics Journal, 2012, v. 54, n. 12, p. 1406, doi. 10.1007/s11182-012-9762-0
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PECVD growth of crystalline silicon from its tetrafluoride.
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- Crystal Research & Technology, 2010, v. 45, n. 9, p. 899, doi. 10.1002/crat.201000090
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Synthesis and thermal diffusion of nanostructured porous GaAs.
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- Crystal Research & Technology, 2008, v. 43, n. 9, p. 953
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A plain man's guide to delta-doped semiconductors.
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- Contemporary Physics, 1992, v. 33, n. 6, p. 369, doi. 10.1080/00107519208211064
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THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS:: INFINITE AND FINITE MODEL.
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- Surface Review & Letters, 2006, v. 13, n. 6, p. 747, doi. 10.1142/S0218625X06008797
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THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL.
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- Surface Review & Letters, 2005, v. 12, n. 2, p. 155, doi. 10.1142/S0218625X05006871
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The Effects of Hydrogen-Like Impurity and Temperature on State Energies and Transition Frequency of Strong-Coupling Bound Polaron in an Asymmetric Gaussian Potential Quantum Well.
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- Journal of Low Temperature Physics, 2018, v. 192, n. 1/2, p. 41, doi. 10.1007/s10909-018-1873-8
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Phase Shift of the Asymmetric Friedel-Anderson Impurity.
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- Journal of Low Temperature Physics, 2013, v. 171, n. 1/2, p. 120, doi. 10.1007/s10909-012-0786-1
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Application of an Untargeted Chemometric Strategy in the Impurity Profiling of Pharmaceuticals: An Example of Amisulpride.
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- Journal of Chromatographic Science, 2017, v. 55, n. 3, p. 309, doi. 10.1093/chromsci/bmw186
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Synthesis and characterization of bulk cobalt-doped ZnO and their thin films.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 10, p. 3115, doi. 10.1007/s10948-013-2128-1
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Spin-Resolved Local Density of States for an Anderson Adatom in a Ferromagnetic Island.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 6, p. 2197, doi. 10.1007/s10948-012-1428-1
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Neutron Powder Diffraction Study in LaAgMnO.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 6, p. 1933, doi. 10.1007/s10948-011-1147-z
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Preparation of Y[YbNd]BaCuO Superconductors Using Nitrate Routes.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 4, p. 1309, doi. 10.1007/s10948-010-0824-7
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Impurity-Related Local Density-of-States Modulation in BiSrCa(CuZn)O Probed by Scanning Tunneling Spectroscopy.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 1/2, p. 481, doi. 10.1007/s10948-010-0976-5
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Physics of semiconductors and dielectrics the mechanism of formation and properties of stratified-inhomogeneity defects in silicon.
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- Russian Physics Journal, 2006, v. 49, n. 3, p. 233, doi. 10.1007/s11182-006-0095-8
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Pattern formation in semiconductors.
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- Nature, 1999, v. 397, n. 6718, p. 398
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ON VARIATION OF CHARGE CARRIER TRANSPORT IN p-n-JUNCTIONS AFTER OPTIMIZED IMPURITY DISTRIBUTIONS.
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- Journal of Modern Technology & Engineering, 2021, v. 6, n. 2, p. 151
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Growth and Elemental Analysis of a Series of KTi<sub>1-x</sub>Zr<sub>x</sub>OPO<sub>4</sub> Crystals.
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- Crystallography Reports, 2018, v. 63, n. 3, p. 488, doi. 10.1134/S1063774518030094
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Convection in Melts and Impurity Distribution in Semiconductor Crystals.
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- Crystallography Reports, 2000, v. 45, n. 5, p. 862, doi. 10.1134/1.1312937
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An analysis of a kick-out diffusion mechanism with charge effects.
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- Quarterly Journal of Mechanics & Applied Mathematics, 1998, v. 51, n. 4, p. 515, doi. 10.1093/qjmam/51.4.515
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KLEIN TUNNELING IN THE PRESENCE OF RANDOM IMPURITIES.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2012, v. 23, n. 12, p. 1, doi. 10.1142/S0129183112500805
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CARBON NANOTUBES AS A PERFECTLY CONDUCTING CYLINDER.
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- International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 3, p. 849, doi. 10.1142/S0129156403002058
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Seebeck Coefficient in Nonparabolic Bulk Materials.
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- Journal of Electronic Materials, 2011, v. 40, n. 5, p. 1221, doi. 10.1007/s11664-011-1610-4
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Diversity of Microstructure of Polymer Solid Investigated by Motion of Impurity Ions.
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- Macromolecular Symposia, 2016, v. 365, n. 1, p. 169, doi. 10.1002/masy.201650005
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Point defects in ZnO: an approach from first principles.
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- Science & Technology of Advanced Materials, 2011, v. 12, n. 3, p. 1, doi. 10.1088/1468-6996/12/3/034302
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Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p<sup>+</sup>−i−n<sup>+</sup> Diode.
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- Technical Physics, 2018, v. 63, n. 6, p. 928, doi. 10.1134/S1063784218060130
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Effect of Magnesium Isovalent Impurity on the Temperature Stability of Blue Luminescence in Zinc Selenide.
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- Technical Physics, 2002, v. 47, n. 6, p. 786, doi. 10.1134/1.1486205
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Spin–Orbit Interaction in a Spherical Quantum Dot.
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- Acta Physica Polonica: A, 2014, v. 125, n. 5, p. 1197, doi. 10.12693/APhysPolA.125.1197
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Luminescence and Luminescence Kinetics of Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> Polycrystals Doped with Cr<sub>3+</sub> and Pr<sub>3+</sub>.
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- Acta Physica Polonica: A, 2010, v. 117, n. 1, p. 117, doi. 10.12693/APhysPolA.117.117
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A COMPARISON OF THE RESISTIVITY BEHAVIOR OF MgB<sub>2</sub>, AlB<sub>2</sub> AND AgB<sub>2</sub> SYSTEMS.
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- Modern Physics Letters B, 2006, v. 20, n. 16, p. 989, doi. 10.1142/S0217984906011116
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Effect of a Charged Impurity on a Lithium Quantum Dot.
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- Modern Physics Letters B, 2003, v. 17, n. 18, p. 973, doi. 10.1142/S0217984903006062
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THE INFLUENCE OF AN IMPURITY ON PERSISTENT CURRENTS IN CROSSING MESOSCOPIC DOUBLE RINGS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2255, doi. 10.1142/S0217979208039472
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THEORETICAL STUDIES OF THE ZERO-FIELD SPLITTING AND g FACTOR FOR Gd<sup>3+</sup> IN La<sub>2-x</sub>Sr<sub>x</sub>CuO<sub>4</sub>.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, v. 21, n. 18/19, p. 3254, doi. 10.1142/S0217979207044317
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CARRIER MOBILITY IN A SEMICONDUCTOR QUANTUM WELL WIRE–EFFECTS OF EXTERNAL PERTURBATIONS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, v. 20, n. 1, p. 49, doi. 10.1142/S0217979206033048
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New Insights into the Morphological Stability of Eutectic and Peritectic Coupled Growth.
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- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2004, v. 56, n. 4, p. 28, doi. 10.1007/s11837-004-0069-7
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First structural evidence for the mode of diffusion of aromatic ligands and ligand-induced closure of the hydrophobic channel in heme peroxidases.
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- Journal of Biological Inorganic Chemistry (JBIC), 2010, v. 15, n. 7, p. 1099, doi. 10.1007/s00775-010-0669-3
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Solid-state physics: Doping the undopable.
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- Nature, 2005, v. 436, n. 7047, p. 32, doi. 10.1038/436032a
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NMR investigation of boron impurities in refined metallurgical grade silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 2031, doi. 10.1002/pssa.201431908
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The electric field dependence of a donor impurity in graded GaAs quantum wires.
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- Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 7, p. 1053, doi. 10.1007/s00339-003-2161-1
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