Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1361, doi. 10.1134/1.2140304
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 12
Results: 17
1
2
Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1369, doi. 10.1134/1.2140305
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- Publication type:
- Article
3
Electron Exchange between Neutral and Ionized Germanium Centers in PbSe.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1371, doi. 10.1134/1.2140306
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- Publication type:
- Article
4
Characterization of Photonic Crystals Based on Opal–Semiconductor Composites by Bragg Reflection Spectroscopy.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1374, doi. 10.1134/1.2140307
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- Publication type:
- Article
5
On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1381, doi. 10.1134/1.2140308
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- Publication type:
- Article
6
Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1387, doi. 10.1134/1.2140309
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- Publication type:
- Article
7
Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 12, p. 1391, doi. 10.1134/1.2140310
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- Publication type:
- Article
8
Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry.
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- Semiconductors, 2005, v. 39, n. 12, p. 1394, doi. 10.1134/1.2140311
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- Publication type:
- Article
9
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1399, doi. 10.1134/1.2140312
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- Publication type:
- Article
10
Electrical Properties of n-GaN/p-SiC Heterojunctions.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1403, doi. 10.1134/1.2140313
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- Publication type:
- Article
11
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se<sub>2</sub> Heterostructures and Exposed to γ-ray Radiation.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314
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- Article
12
The Tail of Localized States in the Band Gap of the Quantum Well in the In<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1410, doi. 10.1134/1.2140315
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- Publication type:
- Article
13
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1415, doi. 10.1134/1.2140316
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- Publication type:
- Article
14
The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1420, doi. 10.1134/1.2140317
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- Publication type:
- Article
15
Yuriı Vasil’evich Shmartsev (On the 75th Anniversary of His Birth).
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1429, doi. 10.1134/1.2140319
- Publication type:
- Article
16
Boris Vasil’evich Tsarenkov (On the 75th Anniversary of His Birth).
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1431, doi. 10.1134/1.2140320
- Publication type:
- Article
17
“Ideal” Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1426, doi. 10.1134/1.2140318
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- Publication type:
- Article