OpenURL Connection Search

Select item for more details and to access through your institution.

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.
Published in:
Semiconductors, 2022, v. 56, n. 3, p. 189, doi. 10.1134/S1063782622020099
By:
- Lebedev, A. A.;
- Kozlovski, V. V.;
- Levinshtein, M. E.;
- Malevsky, D. A.;
- Oganesyan, G. A.;
- Strel'chuk, A. M.;
- Davydovskaya, K. S.
Publication type:
Article
Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
Published in:
2021
By:
- Strel'chuk, A. M.;
- Lebedev, A. A.;
- Bulat, P. V.
Publication type:
Correction Notice
Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
Published in:
Semiconductors, 2020, v. 54, n. 12, p. 1624, doi. 10.1134/S1063782620120374
By:
- Strel'chuk, A. M.;
- Lebedev, A. A.;
- Bulat, P. V.
Publication type:
Article
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1568, doi. 10.1134/S1063782619160140
By:
- Lebedev, A. A.;
- Levinshtein, M. E.;
- Ivanov, P. A.;
- Kozlovski, V. V.;
- Strel'chuk, A. M.;
- Shabunina, E. I.;
- Fursin, L.
Publication type:
Article
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1758, doi. 10.1134/S1063782618130171
By:
- Strel'chuk, A. M.;
- Kozlovski, V. V.;
- Lebedev, A. A.
Publication type:
Article
Effect of the energy of bombarding electrons on the conductivity of n-4 H-SiC (CVD) epitaxial layers.
Published in:
Semiconductors, 2017, v. 51, n. 3, p. 299, doi. 10.1134/S1063782617030137
By:
- Kozlovski, V.;
- Lebedev, A.;
- Strel'chuk, A.;
- Davidovskaya, K.;
- Vasil'ev, A.;
- Makarenko, L.
Publication type:
Article
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 249, doi. 10.1134/S1063782616020111
By:
- Kalyadin, A.;
- Sobolev, N.;
- Strel'chuk, A.;
- Aruev, P.;
- Zabrodskiy, V.;
- Shek, E.
Publication type:
Article
Radiation hardness of n-GaN schottky diodes.
Published in:
Semiconductors, 2015, v. 49, n. 10, p. 1341, doi. 10.1134/S1063782615100127
By:
- Lebedev, A.;
- Belov, S.;
- Mynbaeva, M.;
- Strel'chuk, A.;
- Bogdanova, E.;
- Makarov, Yu.;
- Usikov, A.;
- Kurin, S.;
- Barash, I.;
- Roenkov, A.;
- Kozlovski, V.
Publication type:
Article
Optical and electrical properties of 4 H-SiC irradiated with Xe ions.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 156, doi. 10.1134/S1063782614020146
By:
- Kalinina, E.;
- Chuchvaga, N.;
- Bogdanova, E.;
- Strel'chuk, A.;
- Shustov, D.;
- Zamoryanskaya, M.;
- Skuratov, V.
Publication type:
Article
Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.
Published in:
Semiconductors, 2011, v. 45, n. 5, p. 623, doi. 10.1134/S1063782611050186
By:
- Lebedev, A.;
- Agrinskaya, N.;
- Lebedev, S.;
- Mynbaeva, M.;
- Petrov, V.;
- Smirnov, A.;
- Strel'chuk, A.;
- Titkov, A.;
- Shamshur, D.
Publication type:
Article
Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1389, doi. 10.1134/S106378261010026X
By:
- Lebedev, A. A.;
- Strel'chuk, A. M.;
- Shamshur, D. V.;
- Oganesyan, G. A.;
- Lebedev, S. P.;
- Mynbaeva, M. G.;
- Sadokhin, A. V.
Publication type:
Article
A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 778, doi. 10.1134/S1063782610060151
By:
- Kalinina, E. V.;
- Kossov, V. G.;
- Yafaev, R. R.;
- Strel'chuk, A. M.;
- Violina, G. N.
Publication type:
Article
Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures.
Published in:
Semiconductors, 2007, v. 41, n. 1, p. 73, doi. 10.1134/S1063782607010150
By:
- Strel’chuk, V.;
- Lytvyn, P.;
- Kolomys, A.;
- Valakh, M.;
- Mazur, Yu.;
- Wang, Zh.;
- Salamo, G.
Publication type:
Article
A study of n +-6 H/ n-3 C/ p +-6 H-SiC heterostructures grown by sublimation epitaxy.
Published in:
Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, S. Yu.;
- Cherenkov, A. E.;
- Kuznetsov, A. N.;
- Tregubova, A. S.;
- Sorokin, L. M.;
- Shcheglov, M. P.;
- Sadokhin, A. V.;
- Yoneda, S.;
- Nishino, S.
Publication type:
Article
Electrical Properties of n-GaN/p-SiC Heterojunctions.
Published in:
Semiconductors, 2005, v. 39, n. 12, p. 1403, doi. 10.1134/1.2140313
By:
- Ledyaev, O. Yu.;
- Strel'chuk, A. M.;
- Kuznetsov, A. N.;
- Seredova, N. V.;
- Zubrilov, A. S.;
- Volkova, A. A.;
- Nikolaev, A. E.;
- Lebedev, A. A.
Publication type:
Article
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1187, doi. 10.1134/1.1808826
By:
- Kalinina, E. V.;
- Kholuyanov, G. F.;
- Onushkin, G. A.;
- Davydov, D. V.;
- Strel'chuk, A. M.;
- Konstantinov, A. O.;
- Hallén, A.;
- Nikiforov, A. Yu.;
- Skuratov, V. A.;
- Havancsak, K.
Publication type:
Article
Field emission properties of pointed cathodes based on graphene films on SiC.
Published in:
Journal of Superhard Materials, 2016, v. 38, n. 4, p. 235, doi. 10.3103/S1063457616040031
By:
- Konakova, R.;
- Okhrimenko, O.;
- Kolomys, A.;
- Strel'chuk, V.;
- Svetlichnyi, A.;
- Ageev, O.;
- Volkov, E.;
- Kolomiitsev, A.;
- Zhityaev, I.;
- Spiridonov, O.
Publication type:
Article
Studies of the ceramic material produced by pressureless sintering from the AlN-YO-(Si-C) powder composition using electron microscopy, Raman spectroscopy and measurements of the thermal conductivity and microwave radiation.
Published in:
Journal of Superhard Materials, 2015, v. 37, n. 2, p. 73, doi. 10.3103/S1063457615020021
By:
- Fesenko, I.;
- Chasnyk, V.;
- Kolomys, O.;
- Kaidash, O.;
- Davydchuk, N.;
- Serbenyuk, T.;
- Kuz'menko, E.;
- Gadzyra, M.;
- Lyeshchuk, O.;
- Strel'chuk, V.;
- Galyamin, V.;
- Tkach, S.;
- Fesenko, E.;
- Shmegera, P.;
- Azima, Yu.;
- Recht, H.;
- Vollstädt, H.
Publication type:
Article
Structure and hardness of octahedral natural diamond single crystals depending on the HPHT treatment conditions.
Published in:
Journal of Superhard Materials, 2012, v. 34, n. 3, p. 166, doi. 10.3103/S1063457612030033
By:
- Sokolov, A.;
- Shul'zhenko, A.;
- Gargin, V.;
- Loshak, M.;
- Aleksandrova, L.;
- Nikolenko, A.;
- Strel'chuk, V.;
- Katrusha, A.;
- Kutsai, O.
Publication type:
Article
The energy intensity analysis of the diamond-spark grinding of the WolKar nanostructural hard alloy.
Published in:
Journal of Superhard Materials, 2010, v. 32, n. 1, p. 50, doi. 10.3103/S1063457610010077
By:
- Strel’chuk, P.;
- Uzunyan, M.
Publication type:
Article
Investigation of the p[sup –]-3C-SiC/n[sup +]-6H-SiC Heterostructures with Modulated Doping.
Published in:
Technical Physics Letters, 2002, v. 28, n. 12, p. 1011, doi. 10.1134/1.1535487
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Savkina, N. S.;
- Bogdanova, E. V.;
- Tregubova, A. S.;
- Kuznetsov, A. N.;
- Sorokin, L. M.
Publication type:
Article
Electrical Characteristics of (p)3C-SiC–(n)6H-SiC Heterojunctions.
Published in:
Technical Physics Letters, 2002, v. 28, n. 9, p. 792, doi. 10.1134/1.1511788
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, D. V.;
- Savkina, N. S.;
- Kuznetsov, A. N.;
- Sorokin, L. M.
Publication type:
Article
Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes.
Published in:
Technical Physics, 2020, v. 65, n. 2, p. 250, doi. 10.1134/S1063784220020139
By:
- Lebedev, A. A.;
- Kirillov, A. V.;
- Romanov, L. P.;
- Zubov, A. V.;
- Strel'chuk, A. M.
Publication type:
Article
Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers.
Published in:
Semiconductors, 2003, v. 37, n. 10, p. 1229, doi. 10.1134/1.1619523
By:
- Kalinina, E.V.;
- Kholuyanov, G.F.;
- Davydov, D.V.;
- Strel'chuk, A.M.;
- Hallen, A.;
- Konstantinov, A.O.;
- Luchinin, V.V.;
- Nikiforov, A. Yu.
Publication type:
Article
3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 4, p. 482, doi. 10.1134/1.1568473
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, D. V.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Kuznetsov, A. N.;
- Solov’ev, V. A.;
- Poletaev, N. K.
Publication type:
Article
Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.
Published in:
Semiconductors, 2003, v. 37, n. 1, p. 65, doi. 10.1134/1.1538541
By:
- Strokan, N.B.;
- Ivanov, A.M.;
- Bo&icaron;ko, M.E.;
- Savkina, N.S.;
- Strel'chuk, A.M.;
- Lebedev, A.A.;
- Yakimova, R.
Publication type:
Article
Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1270, doi. 10.1134/1.1521229
By:
- Lebedev, A. A.;
- Kozlovski, V. V.;
- Strokan, N. B.;
- Davydov, D. V.;
- Ivanov, A. M.;
- Strel’chuk, A. M.;
- Yakimova, R.
Publication type:
Article
Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons.
Published in:
Semiconductors, 2000, v. 34, n. 9, p. 1016, doi. 10.1134/1.1309411
By:
- Lebedev, A. A.;
- Veınger, A. I.;
- Davydov, D. V.;
- Kozlovskiı, V. V.;
- Savkina, N. S.;
- Strel’chuk, A. M.
Publication type:
Article
Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons.
Published in:
Semiconductors, 2000, v. 34, n. 8, p. 861, doi. 10.1134/1.1188089
By:
- Lebedev, A. A.;
- Veınger, A. I.;
- Davydov, D. V.;
- Kozlovskiı, V. V.;
- Savkina, N. S.;
- Strel’chuk, A. M.
Publication type:
Article
Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes.
Published in:
Technical Physics Letters, 2020, v. 46, n. 3, p. 287, doi. 10.1134/S1063785020030244
By:
- Kozlovski, V. V.;
- Korol'kov, O.;
- Davidovskaya, K. S.;
- Lebedev, A. A.;
- Levinshtein, M. E.;
- Slepchuk, N.;
- Strel'chuk, A. M.;
- Toompuu, J.
Publication type:
Article
A study of the effect of electron and proton irradiation on 4 H-SiC device structures.
Published in:
Technical Physics Letters, 2017, v. 43, n. 11, p. 1027, doi. 10.1134/S1063785017110256
By:
- Lebedev, A.;
- Davydovskaya, K.;
- Yakimenko, A.;
- Strel'chuk, A.;
- Kozlovskii, V.
Publication type:
Article
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide.
Published in:
Materials (1996-1944), 2022, v. 15, n. 23, p. 8637, doi. 10.3390/ma15238637
By:
- Lebedev, Alexander A.;
- Kozlovski, Vitali V.;
- Davydovskaya, Klavdia S.;
- Kuzmin, Roman A.;
- Levinshtein, Mikhail E.;
- Strel'chuk, Anatolii M.
Publication type:
Article
SERS spectroscopy of nanocomposite porous films containing silver nanoparticles.
Published in:
Optics & Spectroscopy, 2015, v. 118, n. 2, p. 294, doi. 10.1134/S0030400X15020071
By:
- Kaganovich, E.;
- Krischenko, I.;
- Kravchenko, S.;
- Manoilov, E.;
- Golichenko, B.;
- Kolomys, A.;
- Strel'chuk, V.
Publication type:
Article
Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 3, p. 374, doi. 10.1134/S1027451022030260
By:
- Kozlovski, V. V.;
- Vasil'ev, A. E.;
- Lebedev, A. A.;
- Strel'chuk, A. M.;
- Levinshtein, M. E.
Publication type:
Article

Found: 34

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.

Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.

Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.

Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles.

Effect of the energy of bombarding electrons on the conductivity of n-4 H-SiC (CVD) epitaxial layers.

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.

Radiation hardness of n-GaN schottky diodes.

Optical and electrical properties of 4 H-SiC irradiated with Xe ions.

Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.

A high-temperature radiation-resistant rectifier based on p<sup>+</sup>-n junctions in 4H-SiC ion-implanted with aluminum.

Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures.

A study of n <sup>+</sup>-6 H/ n-3 C/ p <sup>+</sup>-6 H-SiC heterostructures grown by sublimation epitaxy.

Electrical Properties of n-GaN/p-SiC Heterojunctions.

Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.

Field emission properties of pointed cathodes based on graphene films on SiC.

Studies of the ceramic material produced by pressureless sintering from the AlN-YO-(Si-C) powder composition using electron microscopy, Raman spectroscopy and measurements of the thermal conductivity and microwave radiation.

Structure and hardness of octahedral natural diamond single crystals depending on the HPHT treatment conditions.

The energy intensity analysis of the diamond-spark grinding of the WolKar nanostructural hard alloy.

Investigation of the p[sup –]-3C-SiC/n[sup +]-6H-SiC Heterostructures with Modulated Doping.

Electrical Characteristics of (p)3C-SiC–(n)6H-SiC Heterojunctions.

Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes.

Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers.

3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.

Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.

Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).

Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons.

Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons.

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes.

A study of the effect of electron and proton irradiation on 4 H-SiC device structures.

Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide.

SERS spectroscopy of nanocomposite porous films containing silver nanoparticles.

Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles.