Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 11

Results: 20

Applicability of a Simplified Shockley–Read–Hall Model to Semiconductors with Various Types of Defects.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1285, doi. 10.1134/1.2128451

By:

Yashin, A. N.

Publication type:

Article

Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4μm Mid-Infrared Spectral Range.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1235, doi. 10.1134/1.2128447

By:

Danilova, T. N.;
Zhurtanov, B. E.;
Imenkov, A. N.;
Yakovlev, Yu. P.

Publication type:

Article

Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1267, doi. 10.1134/1.2128448

By:

Dubrovskiĭ, V. G.;
Cirlin, G. E.

Publication type:

Article

Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth of Silicon Layers from Monosilane in Vacuum.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1275, doi. 10.1134/1.2128449

By:

Orlov, L. K.;
Smyslova, T. N.

Publication type:

Article

Adsorption, Desorption, and Contact and Thermal Transformation of C<sub>60</sub> Molecules on a Ta(100) Surface.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1280, doi. 10.1134/1.2128450

By:

Gall', N. R.;
Ru'kov, E. V.;
Tontegode, A. Ya.

Publication type:

Article

Sensitivity of Insulator–Semiconductor Structures to Time-Dependent Light Fluxes.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1290, doi. 10.1134/1.2128452

By:

Kovtonyuk, N. F.;
Misnik, V. P.;
Sokolov, A. V.

Publication type:

Article

Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453

By:

Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Ushakova, T. N.

Publication type:

Article

Dynamics of Laser-Induced Phase Transitions in Cadmium Telluride.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1299, doi. 10.1134/1.2128454

By:

Kovalev, A. A.;
Zhvavyĭ, S. P.;
Zykov, G. L.

Publication type:

Article

Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455

By:

Sizov, D. S.;
Sizov, V. S.;
Lundin, V. V.;
Tsatsul'nikov, A. F.;
Zavarin, E. E.;
Ledentsov, N. N.

Publication type:

Article

Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1308, doi. 10.1134/1.2128456

By:

Kulbachinskii, V. A.;
Rogozin, V. A.;
Lunin, R. A.;
Belov, A. A.;
Karuzskiĭ, A. L.;
Perestoronin, A. V.;
Zdoroveishchev, A. V.

Publication type:

Article

Interband Light Absorption in Size-Confined Systems in Uniform Electric Fields.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1313, doi. 10.1134/1.2128457

By:

Sinyavski, É. P.;
Sokovnich, S. M.;
Khamidullin, R. A.

Publication type:

Article

Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1319, doi. 10.1134/1.2128458

By:

Vandyshev, E. N.;
Gilinskiĭ, A. M.;
Shamirzaev, T. S.;
Zhuravlev, K. S.

Publication type:

Article

Circular Polarization of Luminescence Caused by the Current in Quantum Wells.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1323, doi. 10.1134/1.2128459

By:

Averkiev, N. S.;
Silov, A. Yu.

Publication type:

Article

Opal–ZnO Nanocomposites: Structure and Emission Properties.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1328, doi. 10.1134/1.2128460

By:

Emel'chenko, G. A.;
Gruzintsev, A. N.;
Koval'chuk, M. N.;
Masalov, V. M.;
Samarov, É. N.;
Yakimov, E. E.;
Barthou, C.;
Zver'kova, I. I.

Publication type:

Article

Luminescence and Electrical Conductivity of Polyamide Acid and Its Metal–Polymer Complexes with La and Tb.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1333, doi. 10.1134/1.2128461

By:

Lebedev, É. A.;
Goıkhman, M. Ya.;
Zhigunov, D. M.;
Podeshvo, I. V.;
Kudryavtsev, V. V.;
Timoshenko, V. Yu.

Publication type:

Article

Effect of the Initial Doping Level on Changes in the Free-Carrier Concentration in Porous Silicon during Ammonia Adsorption.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1338, doi. 10.1134/1.2128462

By:

Pavlikov, A. V.;
Osminkina, L. A.;
Belogorokhov, I. A.;
Konstantinova, E. A.;
Efimova, A. I.;
Timoshenko, V. Yu.;
Kashkarov, P. K.

Publication type:

Article

Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1342, doi. 10.1134/1.2128463

By:

Anishchenko, E. V.;
Kagadeĭ, V. A.;
Nefedtsev, E. V.;
Proskurovskiĭ, D. I.;
Romanenko, S. V.

Publication type:

Article

A New Type of High-Efficiency Bifacial Silicon Solar Cell with External Busbars and a Current-Collecting Wire Grid.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1346, doi. 10.1134/1.2128464

By:

Untila, G. G.;
Kost, T. N.;
Chebotareva, A. B.;
Zaks, M. B.;
Sitnikov, A. M.;
Solodukha, O. I.

Publication type:

Article

Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1352, doi. 10.1134/1.2128465

By:

Nemcsics, Á.

Publication type:

Article

Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO<sub>x</sub>:H.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1356, doi. 10.1134/1.2128466

By:

Medvedev, A. V.;
Feoktistov, N. A.;
Pevtsov, A. B.;
Golubev, V. G.

Publication type:

Article