Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 10

Results: 22

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1111, doi. 10.1134/1.2085255
By:
- Deıbuk, V. G.;
- Dremlyuzhenko, S. G.;
- Ostapov, S. É.
Publication type:
Article
Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge1 – xSix.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1117, doi. 10.1134/1.2085256
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1122, doi. 10.1134/1.2085257
By:
- Berezhinskiı, L. I.;
- Venger, E. F.;
- Matyash, I. E.;
- Sachenko, A. V.;
- Serdega, B. K.
Publication type:
Article
Mechanism of Radiative Recombination in the Region of Interband Transitions in Si–Ge Solid Solutions.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1128, doi. 10.1134/1.2085258
By:
- Emel'yanov, A. M.;
- Sobolev, N. A.;
- Mel'nikova, T. M.;
- Abrosimov, N. V.
Publication type:
Article
Magnetism of III–V Crystals Doped with Rare-Earth Elements.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1131, doi. 10.1134/1.2085259
By:
- Bagraev, N. T.;
- Romanov, V. V.
Publication type:
Article
Study of Certain Properties of Si–Si1 – xGex (0≤x≤1) Structures Grown from a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1141, doi. 10.1134/1.2085260
By:
- Sapaev, B.;
- Saidov, A. S.
Publication type:
Article
Formation of Potential Barriers in Undoped Disordered Semiconductors.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1147, doi. 10.1134/1.2085261
By:
- Vishnyakov, N. V.;
- Vikhrov, S. P.;
- Mishustin, V. G.;
- Avachev, A. P.;
- Utochkin, I. G.;
- Popov, A. A.
Publication type:
Article
Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1153, doi. 10.1134/1.2085262
By:
- Antonova, I. V.
Publication type:
Article
Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1158, doi. 10.1134/1.2085263
By:
- Gruzintsev, A. N.;
- Red'kin, A. N.;
- Barthou, C.
Publication type:
Article
Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1162, doi. 10.1134/1.2085264
By:
- Vdovin, E. E.;
- Khanin, Yu. N.
Publication type:
Article
Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO2 Films.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1168, doi. 10.1134/1.2085265
By:
- Gorokhov, E. B.;
- Volodin, V. A.;
- Marin, D. V.;
- Orekhov, D. A.;
- Cherkov, A. G.;
- Gutakovskiı, A. K.;
- Shvets, V. A.;
- Borisov, A. G.;
- Efremov, M. D.
Publication type:
Article
Electronic Structure and Spectral Properties of Si46 and Na8Si46 Clathrates.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1176, doi. 10.1134/1.2085266
By:
- Kurganskiı, S. I.;
- Borshch, N. A.;
- Pereslavtseva, N. S.
Publication type:
Article
Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1182, doi. 10.1134/1.2085267
By:
- Glinskiı, G. F.;
- Andrianov, A. V.;
- Sreseli, O. M.;
- Zinov'ev, N. N.
Publication type:
Article
Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1188, doi. 10.1134/1.2085268
By:
- Kryzhanovskaya, N. V.;
- Gladyshev, A. G.;
- Blokhin, S. A.;
- Maksimov, M. V.;
- Semenova, E. S.;
- Vasil&'ev, A. P.;
- Zhukov, A. E.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Bimberg, D.
Publication type:
Article
Study of the Properties of a Two-Dimensional Electron Gas in p–-3C-SiC/n+-6H-SiC Heterostructures at Low Temperatures.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1194, doi. 10.1134/1.2085269
By:
- Lebedev, A. A.;
- Nel'son, D. K.;
- Razbirin, B. S.;
- Saıdashev, I. I.;
- Kuznetsov, A. N.;
- Cherenkov, A. E.
Publication type:
Article
Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270
By:
- Dan'ko, V. A.;
- Indutnyı, I. Z.;
- Lysenko, V. S.;
- Maıdanchuk, I. Yu.;
- Min'ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepelyavyı, P. E.
Publication type:
Article
A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1204, doi. 10.1134/1.2085271
By:
- Gergel', V. A.;
- Yakupov, M. N.
Publication type:
Article
Temperature Dependence of the Threshold Current of QW Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1210, doi. 10.1134/1.2085272
By:
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Ivanov-Omskiı, V. I.;
- Smirnov, V. A.;
- Evtikhiev, V. P.;
- Pikhtin, N. A.;
- Rastegaeva, M. G.;
- Stankevich, A. L.;
- Tarasov, I. S.;
- Shkol'nik, A. S.;
- Zegrya, G.
Publication type:
Article
Mid- and Far-IR Focal Plane Arrays Based on Hg1 – xCdxTe Photodiodes.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1215, doi. 10.1134/1.2085273
By:
- Stafeev, V. I.;
- Boltar', K. O.;
- Burlakov, I. D.;
- Akimov, V. M.;
- Klimanov, E. A.;
- Saginov, L. D.;
- Solyakov, V. N.;
- Mansvetov, N. G.;
- Ponomarenko, V. P.;
- Timofeev, A. A.;
- Filachev, A. M.
Publication type:
Article
Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1224, doi. 10.1134/1.2085274
By:
- Khrypunov, G. S.
Publication type:
Article
Electroluminescent Properties of Strained p-Si LEDs.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1229, doi. 10.1134/1.2085275
By:
- Sobolev, N. A.;
- Emel'yanov, A. M.;
- Shek, E. I.;
- Feklisova, O. V.;
- Yakimov, E. B.
Publication type:
Article
Erratum: “Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol” [Semiconductors39, 884 (2005)].
Published in:
2005
By:
- Ogluzdin, V. E.
Publication type:
Correction Notice

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 10

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys.

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge<sub>1 – </sub><sub>x</sub>Si<sub>x</sub>.

Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

Mechanism of Radiative Recombination in the Region of Interband Transitions in Si–Ge Solid Solutions.

Magnetism of III–V Crystals Doped with Rare-Earth Elements.

Study of Certain Properties of Si–Si<sub>1 – </sub><sub>x</sub>Ge<sub>x</sub> (0≤x≤1) Structures Grown from a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy.

Formation of Potential Barriers in Undoped Disordered Semiconductors.

Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures.

Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation.

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO<sub>2</sub> Films.

Electronic Structure and Spectral Properties of Si<sub>46</sub> and Na<sub>8</sub>Si<sub>46</sub> Clathrates.

Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure.

Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.

Study of the Properties of a Two-Dimensional Electron Gas in p<sup>–</sup>-3C-SiC/n<sup>+</sup>-6H-SiC Heterostructures at Low Temperatures.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory.

Temperature Dependence of the Threshold Current of QW Lasers.

Mid- and Far-IR Focal Plane Arrays Based on Hg<sub>1 – </sub><sub>x</sub>Cd<sub>x</sub>Te Photodiodes.

Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures.

Electroluminescent Properties of Strained p-Si LEDs.

Erratum: “Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol” [Semiconductors39, 884 (2005)].