Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 10

Results: 22

Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1182, doi. 10.1134/1.2085267

By:

Glinskiı, G. F.;
Andrianov, A. V.;
Sreseli, O. M.;
Zinov'ev, N. N.

Publication type:

Article

Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1122, doi. 10.1134/1.2085257

By:

Berezhinskiı, L. I.;
Venger, E. F.;
Matyash, I. E.;
Sachenko, A. V.;
Serdega, B. K.

Publication type:

Article

Mechanism of Radiative Recombination in the Region of Interband Transitions in Si–Ge Solid Solutions.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1128, doi. 10.1134/1.2085258

By:

Emel'yanov, A. M.;
Sobolev, N. A.;
Mel'nikova, T. M.;
Abrosimov, N. V.

Publication type:

Article

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1111, doi. 10.1134/1.2085255

By:

Deıbuk, V. G.;
Dremlyuzhenko, S. G.;
Ostapov, S. É.

Publication type:

Article

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge1 – xSix.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1117, doi. 10.1134/1.2085256

By:

Veınger, A. I.;
Zabrodskiı, A. G.;
Tisnek, T. V.

Publication type:

Article

Magnetism of III–V Crystals Doped with Rare-Earth Elements.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1131, doi. 10.1134/1.2085259

By:

Bagraev, N. T.;
Romanov, V. V.

Publication type:

Article

Electronic Structure and Spectral Properties of Si46 and Na8Si46 Clathrates.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1176, doi. 10.1134/1.2085266

By:

Kurganskiı, S. I.;
Borshch, N. A.;
Pereslavtseva, N. S.

Publication type:

Article

Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1153, doi. 10.1134/1.2085262

By:

Antonova, I. V.

Publication type:

Article

Study of Certain Properties of Si–Si1 – xGex (0≤x≤1) Structures Grown from a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1141, doi. 10.1134/1.2085260

By:

Sapaev, B.;
Saidov, A. S.

Publication type:

Article

Formation of Potential Barriers in Undoped Disordered Semiconductors.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1147, doi. 10.1134/1.2085261

By:

Vishnyakov, N. V.;
Vikhrov, S. P.;
Mishustin, V. G.;
Avachev, A. P.;
Utochkin, I. G.;
Popov, A. A.

Publication type:

Article

Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1158, doi. 10.1134/1.2085263

By:

Gruzintsev, A. N.;
Red'kin, A. N.;
Barthou, C.

Publication type:

Article

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1162, doi. 10.1134/1.2085264

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO2 Films.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1168, doi. 10.1134/1.2085265

By:

Gorokhov, E. B.;
Volodin, V. A.;
Marin, D. V.;
Orekhov, D. A.;
Cherkov, A. G.;
Gutakovskiı, A. K.;
Shvets, V. A.;
Borisov, A. G.;
Efremov, M. D.

Publication type:

Article

Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1188, doi. 10.1134/1.2085268

By:

Kryzhanovskaya, N. V.;
Gladyshev, A. G.;
Blokhin, S. A.;
Maksimov, M. V.;
Semenova, E. S.;
Vasil&'ev, A. P.;
Zhukov, A. E.;
Ledentsov, N. N.;
Ustinov, V. M.;
Bimberg, D.

Publication type:

Article

Study of the Properties of a Two-Dimensional Electron Gas in p–-3C-SiC/n+-6H-SiC Heterostructures at Low Temperatures.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1194, doi. 10.1134/1.2085269

By:

Lebedev, A. A.;
Nel'son, D. K.;
Razbirin, B. S.;
Saıdashev, I. I.;
Kuznetsov, A. N.;
Cherenkov, A. E.

Publication type:

Article

Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270

By:

Dan'ko, V. A.;
Indutnyı, I. Z.;
Lysenko, V. S.;
Maıdanchuk, I. Yu.;
Min'ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepelyavyı, P. E.

Publication type:

Article

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1204, doi. 10.1134/1.2085271

By:

Gergel', V. A.;
Yakupov, M. N.

Publication type:

Article

Temperature Dependence of the Threshold Current of QW Lasers.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1210, doi. 10.1134/1.2085272

By:

Bazhenov, N. L.;
Mynbaev, K. D.;
Ivanov-Omskiı, V. I.;
Smirnov, V. A.;
Evtikhiev, V. P.;
Pikhtin, N. A.;
Rastegaeva, M. G.;
Stankevich, A. L.;
Tarasov, I. S.;
Shkol'nik, A. S.;
Zegrya, G.

Publication type:

Article

Mid- and Far-IR Focal Plane Arrays Based on Hg1 – xCdxTe Photodiodes.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1215, doi. 10.1134/1.2085273

By:

Stafeev, V. I.;
Boltar', K. O.;
Burlakov, I. D.;
Akimov, V. M.;
Klimanov, E. A.;
Saginov, L. D.;
Solyakov, V. N.;
Mansvetov, N. G.;
Ponomarenko, V. P.;
Timofeev, A. A.;
Filachev, A. M.

Publication type:

Article

Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1224, doi. 10.1134/1.2085274

By:

Khrypunov, G. S.

Publication type:

Article

Electroluminescent Properties of Strained p-Si LEDs.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1229, doi. 10.1134/1.2085275

By:

Sobolev, N. A.;
Emel'yanov, A. M.;
Shek, E. I.;
Feklisova, O. V.;
Yakimov, E. B.

Publication type:

Article

Erratum: “Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol” [Semiconductors39, 884 (2005)].

Published in:

2005

By:

Ogluzdin, V. E.

Publication type:

Correction Notice

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 10

Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure.

Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

Mechanism of Radiative Recombination in the Region of Interband Transitions in Si–Ge Solid Solutions.

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys.

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge<sub>1 – </sub><sub>x</sub>Si<sub>x</sub>.

Magnetism of III–V Crystals Doped with Rare-Earth Elements.

Electronic Structure and Spectral Properties of Si<sub>46</sub> and Na<sub>8</sub>Si<sub>46</sub> Clathrates.

Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures.

Study of Certain Properties of Si–Si<sub>1 – </sub><sub>x</sub>Ge<sub>x</sub> (0≤x≤1) Structures Grown from a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy.

Formation of Potential Barriers in Undoped Disordered Semiconductors.

Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation.

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO<sub>2</sub> Films.

Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.

Study of the Properties of a Two-Dimensional Electron Gas in p<sup>–</sup>-3C-SiC/n<sup>+</sup>-6H-SiC Heterostructures at Low Temperatures.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory.

Temperature Dependence of the Threshold Current of QW Lasers.

Mid- and Far-IR Focal Plane Arrays Based on Hg<sub>1 – </sub><sub>x</sub>Cd<sub>x</sub>Te Photodiodes.

Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures.

Electroluminescent Properties of Strained p-Si LEDs.

Erratum: “Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol” [Semiconductors39, 884 (2005)].