Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 9

Results: 24

Formation of Nanostructures in a Ga2Se3/GaAs System.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 989, doi. 10.1134/1.2042584

By:

Bezryadin, N. N.;
Kotov, G. I.;
Arsent’ev, I. N.;
Starodubtsev, A. A.

Publication type:

Article

Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 993, doi. 10.1134/1.2042585

By:

Ushakov, V. V.;
Klevkov, Yu. V.

Publication type:

Article

Exact Self-Compensation of Conduction in Cd0.95Zn0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 998, doi. 10.1134/1.2042586

By:

Matveev, O. A.;
Terent'ev, A. I.;
Zelenina, N. K.;
Gus'kov, V. N.;
Sedov, V. E.;
Tomasov, A. A.;
Karpenko, V. P.

Publication type:

Article

Optical Properties of ZnGeP2 in the UV Spectral Region.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1004, doi. 10.1134/1.2042587

By:

Basalaev, Yu. M.;
Gordienko, A. B.;
Poplavnoı, A. S.

Publication type:

Article

Instability of Drift Waves in Two-Component Solid-State Plasma.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1007, doi. 10.1134/1.2042588

By:

Bulgakov, A. A.;
Shramkova, O. V.

Publication type:

Article

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589

By:

Brunkov, P. N.;
Gutkin, A. A.;
Chaldyshev, V. V.;
Bert, N. N.;
Konnikov, S. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Study of the Properties of Hg1 – x – y – zCdxMnyZnzTe as a New Infrared Optoelectronic Material.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1017, doi. 10.1134/1.2042590

By:

Gorbatyuk, I. N.;
Ostapov, S. E.;
Dremlyuzhenko, S. G.;
Zaplitnyı, R. A.;
Fodchuk, I. M.;
Zhikharevich, V. V.;
Deıbuk, V. G.;
Popenko, N. A.;
Ivanchenko, I. V.;
Zhigalov, A. A.;
Karelin, S. Yu.

Publication type:

Article

Transport Coefficients of n-Bi2Te2.7Se0.3 in a Two-Band Model of the Electron Spectrum.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1023, doi. 10.1134/1.2042591

By:

Konstantinov, P. P.;
Prokof'eva, L. V.;
Fedorov, M. I.;
Pshenaı-Severin, D. A.;
Ravich, Yu. I.;
Kompaniets, V. V.;
Chistyakov, V. A.

Publication type:

Article

The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1028, doi. 10.1134/1.2042592

By:

Baıdullaeva, A.;
Vlasenko, A. I.;
Cuzan, L. F.;
Litvin, O. S.;
Mozol', P. E.

Publication type:

Article

Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1032, doi. 10.1134/1.2042593

By:

Davydov, S. Yu.;
Pavlyk, A. V.

Publication type:

Article

Photoelectric Properties of Surface-Barrier Structures Based on Zn2 – 2xCuxInxSe2 Films Obtained by Selenization.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594

By:

Rud', V. Yu.;
Rud', Yu. V.;
Gremenok, V. F.;
Zaretskaya, E. P.;
Sergeeva, O. N.

Publication type:

Article

Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1040, doi. 10.1134/1.2042595

By:

Gergel', V. A.;
Gulyaev, Yu. V.;
Yakupov, M. N.

Publication type:

Article

Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1045, doi. 10.1134/1.2042596

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Shek, E. I.;
Lundin, V. V.;
Usikov, A. S.;
Parshin, E. O.

Publication type:

Article

A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1048, doi. 10.1134/1.2042597

By:

Ignatenko, S. A.;
Borisenko, V. E.

Publication type:

Article

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1053, doi. 10.1134/1.2042598

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.

Publication type:

Article

Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1058, doi. 10.1134/1.2042599

By:

Ivanovskaya, V. V.;
Seifert, G.;
Ivanovskiı, A. L.

Publication type:

Article

Exciton States in Semiconductor Spherical Nanostructures.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1066, doi. 10.1134/1.2042600

By:

Pokutnyi, S. I.

Publication type:

Article

High-Frequency Nonlinear Response of Double-Well Nanostructures.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1071, doi. 10.1134/1.2042601

By:

Elesin, V. F.;
Kateev, I. Yu.

Publication type:

Article

Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1076, doi. 10.1134/1.2042602

By:

Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1082, doi. 10.1134/1.2042603

By:

Morozov, D. V.;
Smirnov, K. V.;
Smirnov, A. V.;
Lyakhov, V. A.;
Goltsman, G. N.

Publication type:

Article

Semiconductor WGM Lasers for the Mid-IR Spectral Range.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1087, doi. 10.1134/1.2042604

By:

Sherstnev, V. V.;
Monakhov, A. M.;
Astakhova, A. P.;
Kislyakova, A. Yu.;
Yakovlev, Yu. P.;
Averkiev, N. S.;
Krier, A.;
Hill, G.

Publication type:

Article

Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1093, doi. 10.1134/1.2042605

By:

Kovtonyuk, N. F.;
Misnik, V. P.;
Sokolov, A. V.

Publication type:

Article

A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1096, doi. 10.1134/1.2042606

By:

Sachenko, A. V.;
Kryuchenko, Yu. V.

Publication type:

Article

A Combined Model of a Resonant-Tunneling Diode.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1102, doi. 10.1134/1.2042607

By:

Abramov, I. I.;
Goncharenko, I. A.;
Kolomeıtseva, N. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 9

Formation of Nanostructures in a Ga<sub>2</sub>Se<sub>3</sub>/GaAs System.

Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques.

Exact Self-Compensation of Conduction in Cd<sub>0.95</sub>Zn<sub>0.05</sub>Te:Cl Crystals in a Wide Range of Cd Vapor Pressures.

Optical Properties of ZnGeP<sub>2</sub> in the UV Spectral Region.

Instability of Drift Waves in Two-Component Solid-State Plasma.

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.

Study of the Properties of Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te as a New Infrared Optoelectronic Material.

Transport Coefficients of n-Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> in a Two-Band Model of the Electron Spectrum.

The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser.

Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate.

Photoelectric Properties of Surface-Barrier Structures Based on Zn<sub>2 – 2x</sub>Cu<sub>x</sub>In<sub>x</sub>Se<sub>2</sub> Films Obtained by Selenization.

Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures.

Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers.

A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor.

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.

Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes.

Exciton States in Semiconductor Spherical Nanostructures.

High-Frequency Nonlinear Response of Double-Well Nanostructures.

Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots.

A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure.

Semiconductor WGM Lasers for the Mid-IR Spectral Range.

Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum.

A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density.

A Combined Model of a Resonant-Tunneling Diode.