Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 9
Results: 24
Formation of Nanostructures in a Ga<sub>2</sub>Se<sub>3</sub>/GaAs System.
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- Semiconductors, 2005, v. 39, n. 9, p. 989, doi. 10.1134/1.2042584
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Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques.
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- Semiconductors, 2005, v. 39, n. 9, p. 993, doi. 10.1134/1.2042585
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Exact Self-Compensation of Conduction in Cd<sub>0.95</sub>Zn<sub>0.05</sub>Te:Cl Crystals in a Wide Range of Cd Vapor Pressures.
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- Semiconductors, 2005, v. 39, n. 9, p. 998, doi. 10.1134/1.2042586
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- Article
Optical Properties of ZnGeP<sub>2</sub> in the UV Spectral Region.
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- Semiconductors, 2005, v. 39, n. 9, p. 1004, doi. 10.1134/1.2042587
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- Article
Instability of Drift Waves in Two-Component Solid-State Plasma.
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- Semiconductors, 2005, v. 39, n. 9, p. 1007, doi. 10.1134/1.2042588
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- Article
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.
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- Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589
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- Article
Study of the Properties of Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te as a New Infrared Optoelectronic Material.
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- Semiconductors, 2005, v. 39, n. 9, p. 1017, doi. 10.1134/1.2042590
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- Article
Transport Coefficients of n-Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> in a Two-Band Model of the Electron Spectrum.
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- Semiconductors, 2005, v. 39, n. 9, p. 1023, doi. 10.1134/1.2042591
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- Article
The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser.
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- Semiconductors, 2005, v. 39, n. 9, p. 1028, doi. 10.1134/1.2042592
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- Article
Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate.
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- Semiconductors, 2005, v. 39, n. 9, p. 1032, doi. 10.1134/1.2042593
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- Article
Photoelectric Properties of Surface-Barrier Structures Based on Zn<sub>2 – 2x</sub>Cu<sub>x</sub>In<sub>x</sub>Se<sub>2</sub> Films Obtained by Selenization.
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- Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594
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- Article
Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures.
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- Semiconductors, 2005, v. 39, n. 9, p. 1040, doi. 10.1134/1.2042595
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- Article
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers.
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- Semiconductors, 2005, v. 39, n. 9, p. 1045, doi. 10.1134/1.2042596
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- Article
A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor.
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- Semiconductors, 2005, v. 39, n. 9, p. 1048, doi. 10.1134/1.2042597
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- Article
The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.
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- Semiconductors, 2005, v. 39, n. 9, p. 1053, doi. 10.1134/1.2042598
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- Article
Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes.
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- Semiconductors, 2005, v. 39, n. 9, p. 1058, doi. 10.1134/1.2042599
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- Article
Exciton States in Semiconductor Spherical Nanostructures.
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- Semiconductors, 2005, v. 39, n. 9, p. 1066, doi. 10.1134/1.2042600
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- Article
High-Frequency Nonlinear Response of Double-Well Nanostructures.
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- Semiconductors, 2005, v. 39, n. 9, p. 1071, doi. 10.1134/1.2042601
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- Article
Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots.
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- Semiconductors, 2005, v. 39, n. 9, p. 1076, doi. 10.1134/1.2042602
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- Article
A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure.
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- Semiconductors, 2005, v. 39, n. 9, p. 1082, doi. 10.1134/1.2042603
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- Article
Semiconductor WGM Lasers for the Mid-IR Spectral Range.
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- Semiconductors, 2005, v. 39, n. 9, p. 1087, doi. 10.1134/1.2042604
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Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum.
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- Semiconductors, 2005, v. 39, n. 9, p. 1093, doi. 10.1134/1.2042605
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- Article
A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density.
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- Semiconductors, 2005, v. 39, n. 9, p. 1096, doi. 10.1134/1.2042606
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A Combined Model of a Resonant-Tunneling Diode.
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- Semiconductors, 2005, v. 39, n. 9, p. 1102, doi. 10.1134/1.2042607
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- Article