Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 7

Results: 25

Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 738, doi. 10.1134/1.1992625

By:

Isakov, G. I.

Publication type:

Article

Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 735, doi. 10.1134/1.1992624

By:

Oleĭnich-Lysyuk, A. V.;
Gutsulyak, B. I.;
Fodchuk, I. M.

Publication type:

Article

The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 742, doi. 10.1134/1.1992626

By:

Aleksandrov, O. V.;
Zakhar'in, A. O.;
Sobolev, N. A.

Publication type:

Article

Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627

By:

Blokhin, S. A.;
Smirnov, A. N.;
Sakharov, A. V.;
Gladyshev, A. G.;
Kryzhanovskaya, N. V.;
Maleev, N. A.;
Zhukov, A. E.;
Semenova, E. S.;
Bedarev, D. A.;
Nikitina, E. V.;
Kulagina, M. M.;
Maksimov, M. V.;
Ledentsov, N. N.;
Ustinov, V. M.

Publication type:

Article

Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 754, doi. 10.1134/1.1992628

By:

Savitskiĭ, A. V.;
Parfenyuk, O. A.;
Ilashchuk, M. I.;
Ulyanitskiĭ, K. S.;
Chupyra, S. N.;
Vakhnyak, N. D.

Publication type:

Article

Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 759, doi. 10.1134/1.1992629

By:

Astrova, E. V.;
Perova, T. S.;
Grudinkin, S. A.;
Tolmachev, V. A.;
Pilyugina, Yu. A.;
Voronkov, V. B.;
Vij, J. K.

Publication type:

Article

Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 768, doi. 10.1134/1.1992630

By:

Pokotilo, Yu. M.;
Petukh, A. N.;
Litvinov, V. V.;
Tsvyrko, V. G.

Publication type:

Article

Weak Ferromagnetism in InSe:Mn Layered Crystals.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 772, doi. 10.1134/1.1992631

By:

Slyn'ko, V. V.;
Khandozhko, A. G.;
Kovalyuk, Z. D.;
Zaslonkin, A. V.;
Slyn'ko, V. E.;
Arciszewska, M.;
Dobrowolski, W. D.

Publication type:

Article

Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0≤x≤0.02) and Tl1 – xCuxInS2 (0≤x≤0.015) Crystals.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 777, doi. 10.1134/1.1992632

By:

Georgobiani, A. N.;
Matiev, A. Kh.;
Khamkhoev, B. M.

Publication type:

Article

The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 780, doi. 10.1134/1.1992633

By:

Bolshakova, I. A.;
Boĭko, V. M.;
Brudnyĭ, V. N.;
Kamenskaya, I. V.;
Kolin, N. G.;
Makido, E. Yu.;
Moskovets, T. A.;
Merkurisov, D. I.

Publication type:

Article

The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0≤x≤0.02) Crystals.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 786, doi. 10.1134/1.1992634

By:

Georgobiani, A. N.;
Matiev, A. Kh.;
Khamkhoev, B. M.

Publication type:

Article

Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 789, doi. 10.1134/1.1992635

By:

Bakhadyrkhanov, M. K.;
Sattarov, O. É.;
Iliev, Kh. M.;
Ayupov, K. S.;
Umaĭer, Tuérdi

Publication type:

Article

Specific Features of the Physical Properties of a Modified CdTe Surface.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 792, doi. 10.1134/1.1992636

By:

Makhniy, V. P.

Publication type:

Article

The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 795, doi. 10.1134/1.1992637

By:

Bochkareva, N. I.;
Zhirnov, E. A.;
Efremov, A. A.;
Rebane, Yu. T.;
Gorbunov, R. I.;
Klochkov, A. V.;
Lavrinovich, D. A.;
Shreter, Yu. G.

Publication type:

Article

The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 800, doi. 10.1134/1.1992638

By:

Bilenko, D. I.;
Belobrovaya, O. Ya.;
Zharkova, É. A.;
Terin, D. V.;
Khasina, E. I.

Publication type:

Article

Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 805, doi. 10.1134/1.1992639

By:

Arutyunyan, V. A.;
Arutyunyan, S. L.;
Demirchyan, G. O.;
Petrosyan, G. Sh.

Publication type:

Article

Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 811, doi. 10.1134/1.1992640

By:

Aronzon, B. A.;
Kovalev, D. Yu.;
Ryl'kov, V. V.

Publication type:

Article

The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 820, doi. 10.1134/1.1992641

By:

Musikhin, Yu. G.;
Cirlin, G. E.;
Dubrovskiĭ, V. G.;
Samsonenko, Yu. B.;
Tonkikh, A. A.;
Bert, N. A.;
Ustinov, V. M.

Publication type:

Article

Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 826, doi. 10.1134/1.1992642

By:

Kadushkin, V. I.

Publication type:

Article

A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643

By:

Terekhov, V. A.;
Terukov, E. I.;
Trapeznikova, I. N.;
Kashkarov, V. M.;
Kurilo, O. V.;
Turishchev, S. Yu.;
Golodenko, A. B.;
Domashevskaya, É. P.

Publication type:

Article

Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 835, doi. 10.1134/1.1992644

By:

Kononov, N. N.;
Kuz'min, G. P.;
Orlov, A. N.;
Surkov, A. A.;
Tikhonevich, O. V.

Publication type:

Article

Magnetic Properties of Iron-Modified Amorphous Carbon.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 840, doi. 10.1134/1.1992645

By:

Yastrebov, S. G.;
Ivanov-Omskiĭ, V. I.;
Pop, V.;
Morosanu, C.;
Slav, A.;
Voiron, J.

Publication type:

Article

Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 845, doi. 10.1134/1.1992646

By:

Aleksandrova, E. L.;
Goĭkhman, M. Ya.;
Podeshvo, I. V.;
Kudryavtsev, V. V.

Publication type:

Article

High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 851, doi. 10.1134/1.1992647

By:

Zakheĭm, D. A.;
Smirnova, I. P.;
Roznanskiĭ, I. V.;
Gurevich, S. A.;
Kulagina, M. M.;
Arakcheeva, E. M.;
Onushkin, G. A.;
Zakheĭm, A. L.;
Vasil'eva, E. D.;
Itkinson, G. V.

Publication type:

Article

A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 856, doi. 10.1134/1.1992648

By:

Titkov, I. E.;
Pronin, I. P.;
Mashovets, D. V.;
Delimova, L. A.;
Liniĭchuk, I. A.;
Grekhov, I. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 7

Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition.

Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon.

The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.

Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.

Low-Temperature Instabilities of the Electrical Properties of Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te:Cl Semi-insulating Crystals.

Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon.

Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy.

Weak Ferromagnetism in InSe:Mn Layered Crystals.

Dispersion of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) and Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>InS<sub>2</sub> (0≤x≤0.015) Crystals.

The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals.

The Electrooptic Effect and Anisotropy of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) Crystals.

Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese.

Specific Features of the Physical Properties of a Modified CdTe Surface.

The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes.

The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment.

Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field.

Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation.

The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.

Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field.

A Study of the Local Electronic and Atomic Structure in a-Si<sub>x</sub>C<sub>1 – </sub><sub>x</sub> Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.

Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder.

Magnetic Properties of Iron-Modified Amorphous Carbon.

Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes.

High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN.

A Ferroelectric Field Effect Transistor Based on a Pb(Zr<sub>x</sub>Ti<sub>1 – </sub><sub>x</sub>)O<sub>3</sub>/SnO<sub>2</sub> Heterostructure.