Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 5

Results: 22

The Effect of Oxygen on the ZnS Electronic Energy-Band Structure.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 485, doi. 10.1134/1.1923552
By:
- Morozova, N. K.;
- Karetnikov, I. A.;
- Golub, K. V.;
- Danilevich, N. D.;
- Lisitsyn, V. M.;
- Oleshko, V. I.
Publication type:
Article
Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 493, doi. 10.1134/1.1923553
By:
- Popov, B. P.;
- Sobolevski&ibreve;, V. K.;
- Apushkinski&ibreve;, E. G.;
- Savel'ev, V. P.
Publication type:
Article
The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 499, doi. 10.1134/1.1923554
By:
- Brudny&ibreve;, V. N.;
- Kolin, N. G.;
- Merkurisov, D. I.;
- Novikov, V. A.
Publication type:
Article
The Conductivity and Hall Effect in CdF2:In and CdF2:Y.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 506, doi. 10.1134/1.1923555
By:
- Sa&ibreve;dashev, I. I.;
- Perlin, E. Yu.;
- Ryskin, A. I.;
- Shcheulin, A. S.
Publication type:
Article
The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 514, doi. 10.1134/1.1923556
By:
- Kaminskii, V. E.
Publication type:
Article
The Extrinsic Photoconductivity of Chalcogens in Ge1 – xSix Solid Solutions.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 521, doi. 10.1134/1.1923557
By:
- Radchuk, N. B.;
- Ushakov, A. Yu.
Publication type:
Article
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 523, doi. 10.1134/1.1923558
By:
- Sitnikova, A. A.;
- Bobyl, A. V.;
- Konnikov, S. G.;
- Ulin, V. P.
Publication type:
Article
p+-Si–n-CdF2 Heterojunctions.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 528, doi. 10.1134/1.1923559
By:
- Bagraev, N. T.;
- Klyachkin, L. E.;
- Malyarenko, A. M.;
- Ryskin, A. I.;
- Shcheulin, A. S.
Publication type:
Article
Injection Currents in Narrow-Gap (Pb1 – xSnxTe):In Insulators.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 533, doi. 10.1134/1.1923560
By:
- Akimov, A. N.;
- Erkov, V. G.;
- Klimov, A. E.;
- Molodtsova, E. L.;
- Suprun, S. P.;
- Shumsky, V. N.
Publication type:
Article
The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 539, doi. 10.1134/1.1923561
By:
- Kosyachenko, L. A.;
- Mathew, X.;
- Motushchuk, V. V.;
- Sclyarchuk, V. M.
Publication type:
Article
The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 543, doi. 10.1134/1.1923562
By:
- Morozova, E. N.;
- Makarovski&ibreve;, O. N.;
- Volkov, V. A.;
- Dubrovski&ibreve;, Yu. V.;
- Turyanska, L.;
- Vdovin, E. E.;
- Patané, A.;
- Eaves, L.;
- Henini, M.
Publication type:
Article
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 547, doi. 10.1134/1.1923563
By:
- Cirlin, G. E.;
- Dubrovski&ibreve;, V. G.;
- Tonkikh, A. A.;
- Sibirev, N. V.;
- Ustinov, V. M.;
- Werner, P.
Publication type:
Article
The Formation of Silicon Nanocrystals in SiO2 Layers by the Implantation of Si Ions with Intermediate Heat Treatments.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 552, doi. 10.1134/1.1923564
By:
- Kachurin, G. A.;
- Volodin, V. A.;
- Tetel'baum, D. I.;
- Marin, D. V.;
- Le&ibreve;er, A. F.;
- Gutakovski&ibreve;, A. K.;
- Cherkov, A. G.;
- Mikha&ibreve;lov, A. N.
Publication type:
Article
The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 557, doi. 10.1134/1.1923565
By:
- Cirlin, G. E.;
- Dubrovski&ibreve;, V. G.;
- Sibirev, N. V.;
- Soshnikov, I. P.;
- Samsonenko, Yu. B.;
- Tonkikh, A. A.;
- Ustinov, V. M.
Publication type:
Article
The Electronic and Emissive Properties of Au-Doped Porous Silicon.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 565, doi. 10.1134/1.1923566
By:
- Primachenko, V. E.;
- Kononets, Ja. F.;
- Bulakh, B. M.;
- Venger, E. F.;
- Kaganovich, É. B.;
- Kizyak, I. M.;
- Kirillova, S. I.;
- Mano&ibreve;lov, É. G.;
- Tsyrkunov, Yu. A.
Publication type:
Article
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567
By:
- Vasin, A. V.;
- Rusavsky, A. V.;
- Lysenko, V. S.;
- Nazarov, A. N.;
- Kushnirenko, V. I.;
- Starik, S. P.;
- Stepanov, V. G.
Publication type:
Article
Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 577, doi. 10.1134/1.1923568
By:
- Rozhanski&ibreve;, I. V.;
- Zakheim, D. A.
Publication type:
Article
Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 585, doi. 10.1134/1.1923569
By:
- Konshina, E. A.;
- Vangonen, A. I.
Publication type:
Article
Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 591, doi. 10.1134/1.1923570
By:
- Savinov, I. S.
Publication type:
Article
Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 594, doi. 10.1134/1.1923571
By:
- Bochkareva, N. I.;
- Zhirnov, E. A.;
- Efremov, A. A.;
- Rebane, Yu. T.;
- Gorbunov, R. I.;
- Shreter, Yu. G.
Publication type:
Article
Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 600, doi. 10.1134/1.1923572
By:
- Drapak, S. I.;
- Vorobets, M. O.;
- Kovalyuk, Z. D.
Publication type:
Article
The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 603, doi. 10.1134/1.1923573
By:
- Zegrya, G. G.;
- Solov'ev, I. Yu.
Publication type:
Article

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 5

The Effect of Oxygen on the ZnS Electronic Energy-Band Structure.

Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals.

The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons.

The Conductivity and Hall Effect in CdF<sub>2</sub>:In and CdF<sub>2</sub>:Y.

The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method.

The Extrinsic Photoconductivity of Chalcogens in Ge<sub>1 – x</sub>Si<sub>x</sub> Solid Solutions.

Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.

p<sup>+</sup>-Si–n-CdF<sub>2</sub> Heterojunctions.

Injection Currents in Narrow-Gap (Pb<sub>1 – x</sub>Sn<sub>x</sub>Te):In Insulators.

The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction.

The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.

Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb.

The Formation of Silicon Nanocrystals in SiO<sub>2</sub> Layers by the Implantation of Si Ions with Intermediate Heat Treatments.

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.

The Electronic and Emissive Properties of Au-Doped Porous Silicon.

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.

Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes.

Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films.

Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms.

Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs.

Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact.

The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers.