Special Features of the Electrical Conductivity in Doped α-Si:H Films with Silicon Nanocrystals.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 448, doi. 10.1134/1.1900260
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 4
Results: 21
1
2
An Electron Spin Resonance Study of Copper–Carbon Systems.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 455, doi. 10.1134/1.1900261
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- Publication type:
- Article
3
Optical Absorption and Chromium Diffusion in ZnSe Single Crystals.
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- Semiconductors, 2005, v. 39, n. 4, p. 377, doi. 10.1134/1.1900247
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- Publication type:
- Article
4
Raman Spectra of the Laser-Irradiated GaSe Single Crystals.
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- Semiconductors, 2005, v. 39, n. 4, p. 381, doi. 10.1134/1.1900248
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- Publication type:
- Article
5
The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects.
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- Semiconductors, 2005, v. 39, n. 4, p. 385, doi. 10.1134/1.1900249
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- Publication type:
- Article
6
The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 395, doi. 10.1134/1.1900250
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- Publication type:
- Article
7
The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 400, doi. 10.1134/1.1900251
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- Publication type:
- Article
8
Photoconversion in n-ZnO:Al/PdPc/p-CuIn<sub>3</sub>Se<sub>5</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
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- Publication type:
- Article
9
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
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- Semiconductors, 2005, v. 39, n. 4, p. 406, doi. 10.1134/1.1900253
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- Publication type:
- Article
10
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
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- Publication type:
- Article
11
Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells.
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- Semiconductors, 2005, v. 39, n. 4, p. 412, doi. 10.1134/1.1900255
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- Publication type:
- Article
12
Effective Mass Anisotropy of Γ Electrons in a GaAs/(AlGa)As Quantum Well.
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- Semiconductors, 2005, v. 39, n. 4, p. 421, doi. 10.1134/1.1900256
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- Publication type:
- Article
13
A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 429, doi. 10.1134/1.1900257
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- Publication type:
- Article
14
The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 432, doi. 10.1134/1.1900258
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- Publication type:
- Article
15
Resonance Donor States in Quantum Wells.
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- Semiconductors, 2005, v. 39, n. 4, p. 439, doi. 10.1134/1.1900259
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- Publication type:
- Article
16
Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 458, doi. 10.1134/1.1900262
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- Publication type:
- Article
17
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 462, doi. 10.1134/1.1900263
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- Publication type:
- Article
18
A Study of Carrier Statistics in InGaN/GaN LED Structures.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
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- Publication type:
- Article
19
Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 472, doi. 10.1134/1.1900265
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- Publication type:
- Article
20
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
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- Publication type:
- Article
21
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3μm InAs/GaAs QD Lasers.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 481, doi. 10.1134/1.1900267
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- Publication type:
- Article