Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 4

Results: 21

Optical Absorption and Chromium Diffusion in ZnSe Single Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 377, doi. 10.1134/1.1900247
By:
- Vaksman, Yu. F.;
- Pavlov, V. V.;
- Nitsuk, Yu. A.;
- Purtov, Yu. N.;
- Nasibov, A. S.;
- Shapkin, P. V.
Publication type:
Article
Raman Spectra of the Laser-Irradiated GaSe Single Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 381, doi. 10.1134/1.1900248
By:
- Ba&icaron;dullaeva, A.;
- Vlasenko, Z. K.;
- Dauletmuratov, B. K.;
- Kuzan, L. F.;
- Mozol', P. E.
Publication type:
Article
The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 385, doi. 10.1134/1.1900249
By:
- Brudny&icaron;, V. N.;
- Grinyaev, S. N.;
- Kolin, N. G.
Publication type:
Article
The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 395, doi. 10.1134/1.1900250
By:
- Filonov, A. B.;
- Krivosheev, A. E.;
- Ivanenko, L. I.;
- Behr, G.;
- Schumann, J.;
- Souptel, D.;
- Borisenko, V. E.
Publication type:
Article
The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 400, doi. 10.1134/1.1900251
By:
- Pagava, T. A.
Publication type:
Article
Photoconversion in n-ZnO:Al/PdPc/p-CuIn<sub>3</sub>Se<sub>5</sub> Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
By:
- Bodnar', I. V.;
- Dmitrieva, E. S.;
- Nikitin, S. E.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 406, doi. 10.1134/1.1900253
By:
- Gule, E. G.;
- Kaganovich, E. B.;
- Kizyak, I. M.;
- Manoilov, E. G.;
- Svechnikov, S. V.
Publication type:
Article
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 412, doi. 10.1134/1.1900255
By:
- Petrov, V. A.;
- Nikitin, A. V.
Publication type:
Article
Effective Mass Anisotropy of Γ Electrons in a GaAs/(AlGa)As Quantum Well.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 421, doi. 10.1134/1.1900256
By:
- Vdovin, E. E.;
- Khanin, Yu. N.
Publication type:
Article
A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 429, doi. 10.1134/1.1900257
By:
- Gergel', V. A.;
- Gulyaev, Yu. V.;
- Kurbatov, V. A.;
- Yakupov, M. N.
Publication type:
Article
The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 432, doi. 10.1134/1.1900258
By:
- Reshina, I. I.;
- Ivanov, S. V.;
- Mirlin, D. N.;
- Sedova, I. V.;
- Sorokin, S. V.
Publication type:
Article
Resonance Donor States in Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 439, doi. 10.1134/1.1900259
By:
- Bekin, N. A.
Publication type:
Article
Special Features of the Electrical Conductivity in Doped α-Si:H Films with Silicon Nanocrystals.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 448, doi. 10.1134/1.1900260
By:
- Arzhannikova, S. A.;
- Efremov, M. D.;
- Kamaev, G. N.;
- Vishnyakov, A. V.;
- Volodin, V. A.
Publication type:
Article
An Electron Spin Resonance Study of Copper–Carbon Systems.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 455, doi. 10.1134/1.1900261
By:
- Popov, B. P.
Publication type:
Article
Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 458, doi. 10.1134/1.1900262
By:
- Osminkina, L. A.;
- Vorontsov, A. S.;
- Konstantinova, E. A.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 462, doi. 10.1134/1.1900263
By:
- Maleev, N. A.;
- Kuz'menkov, A. G.;
- Zhukov, A. E.;
- Vasil'ev, A. P.;
- Shulenkov, A. S.;
- Chumak, S. V.;
- Nikitina, E. V.;
- Blokhin, S. A.;
- Kulagina, M. M.;
- Semenova, E. S.;
- Livshits, D. A.;
- Maksimov, M. V.;
- Ustinov, V. M.
Publication type:
Article
A Study of Carrier Statistics in InGaN/GaN LED Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 472, doi. 10.1134/1.1900265
By:
- Astakhova, A. P.;
- Il'inskaya, N. D.;
- Imenkov, A. N.;
- Kizhaev, S. S.;
- Molchanov, S. S.;
- Yakovlev, Yu. P.
Publication type:
Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Karachinski&icaron;, L. Ya.;
- Maksimov, M. V.;
- Shernyakov, Yu. M.;
- Kovsh, A. R.;
- Krestnikov, I. L.;
- Kozhukhov, A. V.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3μm InAs/GaAs QD Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 481, doi. 10.1134/1.1900267
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Maksimov, M. V.;
- Shernyakov, Yu. M.;
- Semenova, E. S.;
- Vasil'ev, A. P.;
- Zhukov, A. E.;
- Ustinov, V. M.;
- Zegrya, G. G.
Publication type:
Article