Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 3

Results: 22

Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 313, doi. 10.1134/1.1882793

By:

Berman, L. S.

Publication type:

Article

Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 281, doi. 10.1134/1.1882786

By:

Il'in, A. S.;
Maksimov, A. I.;
Moshnikov, V. A.;
Yaroslavtsev, N. P.

Publication type:

Article

A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 317, doi. 10.1134/1.1882794

By:

Karavaev, G. F.;
Chernyshov, V. N.

Publication type:

Article

Cationic Disorder in an Sr2FeMoO6 Binary Oxide with a Perovskite Structure.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 273, doi. 10.1134/1.1882784

By:

Lobanovski&icaron;, L. S.;
Trukhanov, S. V.;
Bushinski&icaron;, M. V.;
Troyanchuk, I. O.

Publication type:

Article

A Vacancy Model of the Heteropolytype Epitaxy of SiC.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 277, doi. 10.1134/1.1882785

By:

Lebedev, A. A.;
Davydov, S. Yu.

Publication type:

Article

High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 370, doi. 10.1134/1.1882804

By:

Vinokurov, D. A.;
Zorina, S. A.;
Kapitonov, V. A.;
Murashova, A. V.;
Nikolaev, D. N.;
Stankevich, A. L.;
Khomylev, M. A.;
Shamakhov, V. V.;
Leshko, A. Yu.;
Lyutetski&icaron;, A. V.;
Nalyot, T. A.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Fetisova, N. V.;
Tarasov, I. S.

Publication type:

Article

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 285, doi. 10.1134/1.1882787

By:

Kozlov, A. I.;
Sobolev, V. V.;
Knjazev, A. F.

Publication type:

Article

Statistics of Electrons in PbS with U Centers.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 289, doi. 10.1134/1.1882788

By:

Nemov, S. A.;
Nasredinov, F. S.;
Seregin, P. P.;
Seregin, N. P.;
Khuzhakulov, E. S.

Publication type:

Article

The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 293, doi. 10.1134/1.1882789

By:

Ardyshev, M. V.;
Ardyshev, V. M.;
Kryuchkov, Yu. Yu.

Publication type:

Article

The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 296, doi. 10.1134/1.1882790

By:

Bacherikov, Yu. Yu.;
Kitsyuk, N. V.;
Optasyuk, S. V.;
Stadnik, A. A.

Publication type:

Article

Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with 28Si, 29Si, and 30Si Isotopes.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 300, doi. 10.1134/1.1882791

By:

Sennikov, P. G.;
Kotereva, T. V.;
Kurganov, A. G.;
Andreev, B. A.;
Niemann, H.;
Schiel, D.;
Emtsev, V. V.;
Pohl, H.-J.

Publication type:

Article

The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 308, doi. 10.1134/1.1882792

By:

Voronina, T. I.;
Lagunova, T. S.;
Lipaev, A. F.;
Kunitsyna, E. V.;
Parkhomenko, Ya. A.;
Sipovskaya, M. A.;
Yakovlev, Yu. P.

Publication type:

Article

A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 325, doi. 10.1134/1.1882795

By:

Gorski&icaron;, P. V.

Publication type:

Article

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 Structures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 343, doi. 10.1134/1.1882798

By:

Persheyev, S. K.;
Smirnov, V.;
O'Neill, K. A.;
Reynolds, S.;
Rose, M. J.

Publication type:

Article

Vegard’s Law and Superstructural Phases in AlxGa1 – xAs/GaAs(100) Epitaxial Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 336, doi. 10.1134/1.1882797

By:

Domashevskaya, É. P.;
Seredin, P. V.;
Dolgopolova, É. A.;
Zanin, I. E.;
Arsent'ev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 347, doi. 10.1134/1.1882799

By:

Osminkina, L. A.;
Konstantinova, E. A.;
Sharov, K. S.;
Kashkarov, P. K.;
Timoshenko, V. Yu.

Publication type:

Article

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 351, doi. 10.1134/1.1882800

By:

Biryukov, A. V.;
Kazanski&icaron;, A. G.;
Terukov, E. I.;
Khabarova, K. Yu.

Publication type:

Article

A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 354, doi. 10.1134/1.1882801

By:

Mnatsakanov, T. T.;
Yurkov, S. N.;
Tandoev, A. G.

Publication type:

Article

A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 360, doi. 10.1134/1.1882802

By:

Togatov, V. V.;
Gnatyuk, P. A.

Publication type:

Article

Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 364, doi. 10.1134/1.1882803

By:

Strokan, N. B.;
Ivanov, A. M.;
Kalinina, E. V.;
Kholuyanov, G. F.;
Onushkin, G. A.;
Davydov, D. V.;
Violina, G. N.

Publication type:

Article

A Review of the Book Atomy legiruyushchikh primeseı v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004).

Published in:

2005

By:

Mil’vidski&icaron;, M. G.;
Ufimtsev, V. B.

Publication type:

Book Review

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 3

Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure.

Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology.

A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces.

Cationic Disorder in an Sr<sub>2</sub>FeMoO<sub>6</sub> Binary Oxide with a Perovskite Structure.

A Vacancy Model of the Heteropolytype Epitaxy of SiC.

High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide.

Statistics of Electrons in PbS with U Centers.

The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation.

The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders.

Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with <sup>28</sup>Si, <sup>29</sup>Si, and <sup>30</sup>Si Isotopes.

The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt.

A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons.

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se<sub>2</sub> Structures.

Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations.

Vegard’s Law and Superstructural Phases in Al<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs(100) Epitaxial Heterostructures.

The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules.

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium.

A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures.

A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures.

Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition.

A Review of the Book Atomy legiruyushchikh primeseı v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004).