Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 3

Results: 22

Cationic Disorder in an Sr2FeMoO6 Binary Oxide with a Perovskite Structure.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 273, doi. 10.1134/1.1882784
By:
- Lobanovski&icaron;, L. S.;
- Trukhanov, S. V.;
- Bushinski&icaron;, M. V.;
- Troyanchuk, I. O.
Publication type:
Article
A Vacancy Model of the Heteropolytype Epitaxy of SiC.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 277, doi. 10.1134/1.1882785
By:
- Lebedev, A. A.;
- Davydov, S. Yu.
Publication type:
Article
Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 281, doi. 10.1134/1.1882786
By:
- Il'in, A. S.;
- Maksimov, A. I.;
- Moshnikov, V. A.;
- Yaroslavtsev, N. P.
Publication type:
Article
Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 285, doi. 10.1134/1.1882787
By:
- Kozlov, A. I.;
- Sobolev, V. V.;
- Knjazev, A. F.
Publication type:
Article
Statistics of Electrons in PbS with U Centers.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 289, doi. 10.1134/1.1882788
By:
- Nemov, S. A.;
- Nasredinov, F. S.;
- Seregin, P. P.;
- Seregin, N. P.;
- Khuzhakulov, E. S.
Publication type:
Article
The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 293, doi. 10.1134/1.1882789
By:
- Ardyshev, M. V.;
- Ardyshev, V. M.;
- Kryuchkov, Yu. Yu.
Publication type:
Article
The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 296, doi. 10.1134/1.1882790
By:
- Bacherikov, Yu. Yu.;
- Kitsyuk, N. V.;
- Optasyuk, S. V.;
- Stadnik, A. A.
Publication type:
Article
Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with 28Si, 29Si, and 30Si Isotopes.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 300, doi. 10.1134/1.1882791
By:
- Sennikov, P. G.;
- Kotereva, T. V.;
- Kurganov, A. G.;
- Andreev, B. A.;
- Niemann, H.;
- Schiel, D.;
- Emtsev, V. V.;
- Pohl, H.-J.
Publication type:
Article
The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 308, doi. 10.1134/1.1882792
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Lipaev, A. F.;
- Kunitsyna, E. V.;
- Parkhomenko, Ya. A.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 313, doi. 10.1134/1.1882793
By:
- Berman, L. S.
Publication type:
Article
A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 317, doi. 10.1134/1.1882794
By:
- Karavaev, G. F.;
- Chernyshov, V. N.
Publication type:
Article
A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 325, doi. 10.1134/1.1882795
By:
- Gorski&icaron;, P. V.
Publication type:
Article
The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 Structures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Vegard’s Law and Superstructural Phases in AlxGa1 – xAs/GaAs(100) Epitaxial Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 336, doi. 10.1134/1.1882797
By:
- Domashevskaya, É. P.;
- Seredin, P. V.;
- Dolgopolova, É. A.;
- Zanin, I. E.;
- Arsent'ev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 343, doi. 10.1134/1.1882798
By:
- Persheyev, S. K.;
- Smirnov, V.;
- O'Neill, K. A.;
- Reynolds, S.;
- Rose, M. J.
Publication type:
Article
The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 347, doi. 10.1134/1.1882799
By:
- Osminkina, L. A.;
- Konstantinova, E. A.;
- Sharov, K. S.;
- Kashkarov, P. K.;
- Timoshenko, V. Yu.
Publication type:
Article
The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 351, doi. 10.1134/1.1882800
By:
- Biryukov, A. V.;
- Kazanski&icaron;, A. G.;
- Terukov, E. I.;
- Khabarova, K. Yu.
Publication type:
Article
A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 354, doi. 10.1134/1.1882801
By:
- Mnatsakanov, T. T.;
- Yurkov, S. N.;
- Tandoev, A. G.
Publication type:
Article
A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 360, doi. 10.1134/1.1882802
By:
- Togatov, V. V.;
- Gnatyuk, P. A.
Publication type:
Article
Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 364, doi. 10.1134/1.1882803
By:
- Strokan, N. B.;
- Ivanov, A. M.;
- Kalinina, E. V.;
- Kholuyanov, G. F.;
- Onushkin, G. A.;
- Davydov, D. V.;
- Violina, G. N.
Publication type:
Article
High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 370, doi. 10.1134/1.1882804
By:
- Vinokurov, D. A.;
- Zorina, S. A.;
- Kapitonov, V. A.;
- Murashova, A. V.;
- Nikolaev, D. N.;
- Stankevich, A. L.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Leshko, A. Yu.;
- Lyutetski&icaron;, A. V.;
- Nalyot, T. A.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Tarasov, I. S.
Publication type:
Article
A Review of the Book Atomy legiruyushchikh primeseı v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004).
Published in:
2005
By:
- Mil’vidski&icaron;, M. G.;
- Ufimtsev, V. B.
Publication type:
Book Review

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 3

Cationic Disorder in an Sr<sub>2</sub>FeMoO<sub>6</sub> Binary Oxide with a Perovskite Structure.

A Vacancy Model of the Heteropolytype Epitaxy of SiC.

Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology.

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide.

Statistics of Electrons in PbS with U Centers.

The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation.

The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders.

Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with <sup>28</sup>Si, <sup>29</sup>Si, and <sup>30</sup>Si Isotopes.

The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt.

Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure.

A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces.

A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons.

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se<sub>2</sub> Structures.

Vegard’s Law and Superstructural Phases in Al<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs(100) Epitaxial Heterostructures.

Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations.

The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules.

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium.

A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures.

A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures.

Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition.

High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.

A Review of the Book Atomy legiruyushchikh primeseı v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004).