Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 2
Results: 21
Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors.
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- Semiconductors, 2005, v. 39, n. 2, p. 161, doi. 10.1134/1.1864192
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- Article
Photoreflection Studies of the Dopant Activation in InP Implanted with Be<sup>+</sup> Ions.
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- Semiconductors, 2005, v. 39, n. 2, p. 174, doi. 10.1134/1.1864193
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The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si.
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- Semiconductors, 2005, v. 39, n. 2, p. 177, doi. 10.1134/1.1864194
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Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure.
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- Semiconductors, 2005, v. 39, n. 2, p. 182, doi. 10.1134/1.1864195
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- Article
The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers under Highly Nonequilibrium Conditions.
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- Semiconductors, 2005, v. 39, n. 2, p. 189, doi. 10.1134/1.1864196
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- Article
Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon.
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- Semiconductors, 2005, v. 39, n. 2, p. 192, doi. 10.1134/1.1864197
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- Article
The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density in a Surface Superlattice in a Strong Electric Field.
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- Semiconductors, 2005, v. 39, n. 2, p. 198, doi. 10.1134/1.1864198
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Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se<sub>2</sub> Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199
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- Article
The Qualitative Difference between Mechanisms of Electroforming in Si–SiO<sub>2</sub>–W Structures Based on n-Si and p-Si.
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- Semiconductors, 2005, v. 39, n. 2, p. 206, doi. 10.1134/1.1864200
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- Article
Luminescence of Multilayer Structures Based on InAsSb at λ = 6–9 μm.
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- Semiconductors, 2005, v. 39, n. 2, p. 214, doi. 10.1134/1.1864201
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- Article
Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202
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- Article
Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas in GaAs/InGaAs/GaAs Heterostructures.
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- Semiconductors, 2005, v. 39, n. 2, p. 221, doi. 10.1134/1.1864203
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- Article
Special Features of the Electron–Electron Interaction in the Potential of a Heavily Doped Al<sub>x</sub>Ga<sub>1 – x</sub>As:Si/GaAs Heterojunction.
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- Semiconductors, 2005, v. 39, n. 2, p. 226, doi. 10.1134/1.1864204
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- Article
The Effect of Thickness Fluctuations on the Static Electrical Conductivity of a Semiconductor Quantum Wire.
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- Semiconductors, 2005, v. 39, n. 2, p. 231, doi. 10.1134/1.1864205
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- Article
Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse.
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- Semiconductors, 2005, v. 39, n. 2, p. 235, doi. 10.1134/1.1864206
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- Article
Optical Properties of Porous Nanosized GaAs.
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- Semiconductors, 2005, v. 39, n. 2, p. 243, doi. 10.1134/1.1864207
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Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.
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- Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208
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Electrical Characteristics of Insulator–Conductor and Insulator–Semiconductor Macrosystems.
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- Semiconductors, 2005, v. 39, n. 2, p. 254, doi. 10.1134/1.1864209
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On the Injection Current Mechanism in Light-Emitting p–i–n Structures Based on a-Si<sub>1 – x</sub>C<sub>x</sub>:H Hydrogenated Amorphous Alloys.
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- Semiconductors, 2005, v. 39, n. 2, p. 261, doi. 10.1134/1.1864210
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A Graded-Gap Photoelectric Detector for Ionizing Radiation.
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- Semiconductors, 2005, v. 39, n. 2, p. 265, doi. 10.1134/1.1864211
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Ammonia Sensors Based on Pd–n-Si Diodes.
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- Semiconductors, 2005, v. 39, n. 2, p. 269, doi. 10.1134/1.1864212
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