Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 12

Results: 15

Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1365, doi. 10.1134/1.1836052

By:

Sklyarchuk, V. M.;
Plevachuk, Yu. O.

Publication type:

Article

Hg1 – x – y – zCdxMnyZnzTe: A New Alternative to Hg1 – xCdxTe.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1369, doi. 10.1134/1.1836053

By:

Gorbatyuk, I. N.;
Markov, A. V.;
Ostapov, S. E´.;
Rarenko, I. M.

Publication type:

Article

Stimulated and Spontaneous Emission of CdxHg1 – xTe Structures in the Range 3.2–3.7 μm at 77 K.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1374, doi. 10.1134/1.1836054

By:

Nozdrin, Yu. N.;
Okomel'kov, A. V.;
Kotkov, A. P.;
Moiseev, A. N.;
Grishnova, N. D.

Publication type:

Article

Photoluminescence of Electron–Hole Plasma in Semi-Insulating Undoped GaAs.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1378, doi. 10.1134/1.1836055

By:

Kovalenko, V. F.;
Shutov, S. V.

Publication type:

Article

Effect of Hydrogen Sulfide on Photoelectric Characteristics of Al–n-Si–SnO2:Cu–Ag Isotype Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1381, doi. 10.1134/1.1836056

By:

Slobodchikov, S. V.;
Russu, E. V.;
Ivanov, E´. V.;
Malinin, Yu. G.;
Salikhov, Kh. M.

Publication type:

Article

Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1384, doi. 10.1134/1.1836057

By:

Avakyants, L. P.;
Bokov, P. Yu.;
Kolmakova, T. P.;
Chervyakov, A. V.

Publication type:

Article

Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1390, doi. 10.1134/1.1836058

By:

Terekhov, V. A.;
Man'ko, A. N.;
Bormontov, E. N.;
Levchenko, V. N.;
Trebunskikh, S. Yu.;
Tutov, E. A.;
Domashevskaya, E´. P.

Publication type:

Article

Traps with Near-Midgap Energies at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1394, doi. 10.1134/1.1836059

By:

Antonova, I. V.;
Popov, V. P.;
Polyakov, V. I.;
Rukovishnikov, A. I.

Publication type:

Article

Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1419, doi. 10.1134/1.1836064

By:

Astakhova, A. P.;
Grebenshchikova, E. A.;
Ivanov, É. V.;
Imenkov, A. N.;
Kunitsyna, E. V.;
Parkhomenko, Ya. A.;
Yakovlev, Yu. P.

Publication type:

Article

Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1400, doi. 10.1134/1.1836060

By:

Azarov, A. Yu.

Publication type:

Article

Formation and Optical Properties of CuInSe2xTe2(1 – x) Nanoparticles in a Silicate Glass Matrix.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1402, doi. 10.1134/1.1836061

By:

Bodnar', I. V.;
Solove&acaron;, N. P.;
Gurin, V. S.;
Molochko, A. P.

Publication type:

Article

Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1409, doi. 10.1134/1.1836062

By:

Zerova, V. L.;
Kapaev, V. V.;
Vorob'ev, L. E.;
Firsov, D. A.;
Schmidt, S.;
Zibik, E. A.;
Seilmeier, A.;
Towe, E.

Publication type:

Article

Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1416, doi. 10.1134/1.1836063

By:

Ivanov-Omski&icaron;, V. I.;
Kolobov, A. V.;
Lodygin, A. B.;
Yastrebov, S. G.

Publication type:

Article

Luminescence Properties of Cylindrical ZnO Microcavities.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1426, doi. 10.1134/1.1836065

By:

Gruzintsev, A. N.;
Volkov, V. T.;
Dubonos, S. V.;
Knyazev, M. A.;
Yakimov, E. E.

Publication type:

Article

Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1430, doi. 10.1134/1.1836066

By:

Slipchenko, S. O.;
Vinokurov, D. A.;
Pikhtin, N. A.;
Sokolova, Z. N.;
Stankevich, A. L.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 12

Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals.

Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te: A New Alternative to Hg<sub>1 – x</sub>Cd<sub>x</sub>Te.

Stimulated and Spontaneous Emission of Cd<sub>x</sub>Hg<sub>1 – x</sub>Te Structures in the Range 3.2–3.7 μm at 77 K.

Photoluminescence of Electron–Hole Plasma in Semi-Insulating Undoped GaAs.

Effect of Hydrogen Sulfide on Photoelectric Characteristics of Al–n-Si–SnO<sub>2</sub>:Cu–Ag Isotype Heterostructures.

Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices.

Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.

Traps with Near-Midgap Energies at the Bonded Si/SiO<sub>2</sub> Interface in Silicon-on-Insulator Structures.

Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts.

Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures.

Formation and Optical Properties of CuInSe<sub>2x</sub>Te<sub>2(1 – x)</sub> Nanoparticles in a Silicate Glass Matrix.

Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells.

Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix.

Luminescence Properties of Cylindrical ZnO Microcavities.

Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.