Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 12

Results: 15

Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1365, doi. 10.1134/1.1836052
By:
- Sklyarchuk, V. M.;
- Plevachuk, Yu. O.
Publication type:
Article
Hg1 – x – y – zCdxMnyZnzTe: A New Alternative to Hg1 – xCdxTe.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1369, doi. 10.1134/1.1836053
By:
- Gorbatyuk, I. N.;
- Markov, A. V.;
- Ostapov, S. E´.;
- Rarenko, I. M.
Publication type:
Article
Stimulated and Spontaneous Emission of CdxHg1 – xTe Structures in the Range 3.2–3.7 μm at 77 K.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1374, doi. 10.1134/1.1836054
By:
- Nozdrin, Yu. N.;
- Okomel'kov, A. V.;
- Kotkov, A. P.;
- Moiseev, A. N.;
- Grishnova, N. D.
Publication type:
Article
Photoluminescence of Electron–Hole Plasma in Semi-Insulating Undoped GaAs.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1378, doi. 10.1134/1.1836055
By:
- Kovalenko, V. F.;
- Shutov, S. V.
Publication type:
Article
Effect of Hydrogen Sulfide on Photoelectric Characteristics of Al–n-Si–SnO2:Cu–Ag Isotype Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1381, doi. 10.1134/1.1836056
By:
- Slobodchikov, S. V.;
- Russu, E. V.;
- Ivanov, E´. V.;
- Malinin, Yu. G.;
- Salikhov, Kh. M.
Publication type:
Article
Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1384, doi. 10.1134/1.1836057
By:
- Avakyants, L. P.;
- Bokov, P. Yu.;
- Kolmakova, T. P.;
- Chervyakov, A. V.
Publication type:
Article
Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1390, doi. 10.1134/1.1836058
By:
- Terekhov, V. A.;
- Man'ko, A. N.;
- Bormontov, E. N.;
- Levchenko, V. N.;
- Trebunskikh, S. Yu.;
- Tutov, E. A.;
- Domashevskaya, E´. P.
Publication type:
Article
Traps with Near-Midgap Energies at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1394, doi. 10.1134/1.1836059
By:
- Antonova, I. V.;
- Popov, V. P.;
- Polyakov, V. I.;
- Rukovishnikov, A. I.
Publication type:
Article
Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1400, doi. 10.1134/1.1836060
By:
- Azarov, A. Yu.
Publication type:
Article
Formation and Optical Properties of CuInSe2xTe2(1 – x) Nanoparticles in a Silicate Glass Matrix.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1402, doi. 10.1134/1.1836061
By:
- Bodnar', I. V.;
- Solove&acaron;, N. P.;
- Gurin, V. S.;
- Molochko, A. P.
Publication type:
Article
Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1409, doi. 10.1134/1.1836062
By:
- Zerova, V. L.;
- Kapaev, V. V.;
- Vorob'ev, L. E.;
- Firsov, D. A.;
- Schmidt, S.;
- Zibik, E. A.;
- Seilmeier, A.;
- Towe, E.
Publication type:
Article
Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1416, doi. 10.1134/1.1836063
By:
- Ivanov-Omski&icaron;, V. I.;
- Kolobov, A. V.;
- Lodygin, A. B.;
- Yastrebov, S. G.
Publication type:
Article
Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1419, doi. 10.1134/1.1836064
By:
- Astakhova, A. P.;
- Grebenshchikova, E. A.;
- Ivanov, É. V.;
- Imenkov, A. N.;
- Kunitsyna, E. V.;
- Parkhomenko, Ya. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Luminescence Properties of Cylindrical ZnO Microcavities.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1426, doi. 10.1134/1.1836065
By:
- Gruzintsev, A. N.;
- Volkov, V. T.;
- Dubonos, S. V.;
- Knyazev, M. A.;
- Yakimov, E. E.
Publication type:
Article
Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1430, doi. 10.1134/1.1836066
By:
- Slipchenko, S. O.;
- Vinokurov, D. A.;
- Pikhtin, N. A.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Tarasov, I. S.;
- Alferov, Zh. I.
Publication type:
Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 12

Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals.

Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te: A New Alternative to Hg<sub>1 – x</sub>Cd<sub>x</sub>Te.

Stimulated and Spontaneous Emission of Cd<sub>x</sub>Hg<sub>1 – x</sub>Te Structures in the Range 3.2–3.7 μm at 77 K.

Photoluminescence of Electron–Hole Plasma in Semi-Insulating Undoped GaAs.

Effect of Hydrogen Sulfide on Photoelectric Characteristics of Al–n-Si–SnO<sub>2</sub>:Cu–Ag Isotype Heterostructures.

Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices.

Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.

Traps with Near-Midgap Energies at the Bonded Si/SiO<sub>2</sub> Interface in Silicon-on-Insulator Structures.

Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures.

Formation and Optical Properties of CuInSe<sub>2x</sub>Te<sub>2(1 – x)</sub> Nanoparticles in a Silicate Glass Matrix.

Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells.

Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix.

Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts.

Luminescence Properties of Cylindrical ZnO Microcavities.

Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.