Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 11


Results: 23
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    Properties of GaSb-Based LEDs with Grid Ohmic Contacts.

    Published in:
    Semiconductors, 2004, v. 38, n. 11, p. 1356, doi. 10.1134/1.1823074
    By:
    • Imenkov, A.N.;
    • Grebenshchikova, E.A.;
    • Zhurtanov, B.E.;
    • Danilova, T.N.;
    • Sipovskaya, M.A.;
    • Vlasenko, N.V.;
    • Yakovlev, Yu.P.
    Publication type:
    Article
    20

    MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

    Published in:
    Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
    By:
    • Lundin, V. V.;
    • Zavarin, E. E.;
    • Besulkin, A. I.;
    • Gladyshev, A. G.;
    • Sakharov, A. V.;
    • Kokorev, M. F.;
    • Shmidt, N. M.;
    • Tsatsul'nikov, A. F.;
    • Ledentsov, N. N.;
    • Alferov, Zh. I.;
    • Kakanakov, R.
    Publication type:
    Article
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