Works matching DE "LOW-dimensional semiconductors"

Results: 78

Photonics and Optoelectronics of Low-Dimensional Materials.

Published in:

2018

By:

Lin, Shenghuang;
Bai, Gongxun;
Liu, Zhike;
Xu, Zaiquan;
Hu, Zhixin

Publication type:

Editorial

Collective effects in condensed conducting phases including low-dimensional systems.

Published in:

Advances in Physics, 1995, v. 44, n. 4, p. 299, doi. 10.1080/00018739500101546

By:

March, N.H.;
Tost, M.P

Publication type:

Article

Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1032, doi. 10.1134/S1063782611080185

By:

Sinyavskii, E.;
Karapetyan, S.

Publication type:

Article

Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 229, doi. 10.1134/S1063782606020217

By:

Vostokov, N. V.;
Drozdov, Yu. N.;
Krasil’nik, Z. F.;
Kuznetsov, O. A.;
Lobanov, D. N.;
Novikov, A. V.;
Shaleev, M. V.

Publication type:

Article

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 217, doi. 10.1134/S1063782606020199

By:

Pokutniĭ, S. I.

Publication type:

Article

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187

By:

Kul'bachinskiĭ, V. A.;
Rogozin, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Zvonkov, B. N.;
Dashevsky, Z. M.;
Casian, V. A.

Publication type:

Article

Photoelectric Properties of ZnO/CuPc/Si Structures.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1312, doi. 10.1134/1.1823066

By:

Mityagin, Yu. A.;
Murzin, V. N.;
Efimov, Yu. A.;
Pishchulin, A. A.;
Pyrkov, V. N.

Publication type:

Article

Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1316, doi. 10.1134/1.1823067

By:

Vedernikov, A. I.;
Chaplik, A. V.

Publication type:

Article

MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068

By:

Lundin, V. V.;
Zavarin, E. E.;
Besulkin, A. I.;
Gladyshev, A. G.;
Sakharov, A. V.;
Kokorev, M. F.;
Shmidt, N. M.;
Tsatsul'nikov, A. F.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Kakanakov, R.

Publication type:

Article

A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1–x Quantum Dots.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 447, doi. 10.1134/1.1734672

By:

Kunets, V. P.;
Kulish, N. R.;
Lisitsa, M. P.;
Bryksa, V. P.

Publication type:

Article

Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 202, doi. 10.1134/1.1648377

By:

Borinsenko, S. I.

Publication type:

Article

Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 410, doi. 10.1134/1.1734668

By:

Glukhov, K. E.;
Bercha, A. I.;
Korbutyak, D. V.;
Litovchenko, V. G.

Publication type:

Article

Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Dubrovski&icaron;, Yu. V.

Publication type:

Article

Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670

By:

Karpovich, I. A.;
Levichev, B. N.;
Levichev, S. B.;
Baidus, N. V.;
Tikhov, S. V.;
Filatov, D. O.;
Gorshkov, A. P.;
Ermakov, S. Yu.

Publication type:

Article

Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 437, doi. 10.1134/1.1734671

By:

Khabarov, Yu. V.;
Kapaev, V. V.;
Petrov, V. A.

Publication type:

Article

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 451, doi. 10.1134/1.1734673

By:

Brunkov, P. N.;
Usov, S. O.;
Musikhin, Yu G.;
Zhukov, A. E.;
Cirlin, G. E.;
Ustinov, V. M.;
Konnikov, S. G.;
Rasulova, G. K.

Publication type:

Article

The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the Metal–Insulator Transition.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 192, doi. 10.1134/1.1648375

By:

Egorov, S. V.;
Zabrodski&icaron;, A. G.;
Parfen'ev, R. V.

Publication type:

Article

Substitutional 3d Impurities in Cubic Silicon Carbide.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 189, doi. 10.1134/1.1648374

By:

Parfenova, I. I.

Publication type:

Article

Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376

By:

Bodnar, I. V.;
Polubok, V. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Serginov, M. S.

Publication type:

Article

Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 209, doi. 10.1134/1.1648378

By:

Bezyazychnaya, T. V.;
Zelenkovski&icaron;, V. M.;
Ryabtsev, G. I.;
Sobolev, M. M.

Publication type:

Article

Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 213, doi. 10.1134/1.1648379

By:

Kulikov, V. B.;
Avetisyan, G. H.;
Vasilevskaya, L. M.;
Zalevski&icaron;, I. D.;
Budkin, I. V.;
Padalitsa, A. A.

Publication type:

Article

The X[sup +] Trion in a System with Spatial Separation of the Charge Carriers.

Published in:

Semiconductors, 2003, v. 37, n. 10, p. 1205, doi. 10.1134/1.1619518

By:

Sergeev, R.A.;
Suris, R.A.

Publication type:

Article

Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors.

Published in:

Semiconductors, 2003, v. 37, n. 10, p. 1201, doi. 10.1134/1.1619517

By:

Abramov, I.I.;
Ignatenko, S.A.;
Novik, E.G.

Publication type:

Article

Optical Properties of Ultradisperse CdSe[sub x]Te[sub 1 – ][sub x] (0≤x≤1) Particles in a Silicate Glass Matrix.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 298, doi. 10.1134/1.1461407

By:

Bodnar, I. V.;
Gurin, V. S.;
Molochko, A. P.;
Soloveı, N. P.;
Prokoshin, P. V.;
Yumashev, K. V.

Publication type:

Article

Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 311, doi. 10.1134/1.1461409

By:

Golant, E. I.;
Pashkovskiı, A. B.

Publication type:

Article

Changes in the Density of Nonradiative Recombination Centers in GaAs/AlGaAs Quantum-Well Structures as a Result of Treatment in CF[sub 4] Plasma.

Published in:

Semiconductors, 2002, v. 36, n. 1, p. 81, doi. 10.1134/1.1434518

By:

Shamirzaev, T. S.;
Sokolov, A. L.;
Zhuravlev, K. S.;
Kobitski, A. Yu.;
Wagner, H. P.;
Zahn, D. R. T.

Publication type:

Article

Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots.

Published in:

Semiconductors, 2002, v. 36, n. 1, p. 74, doi. 10.1134/1.1434517

By:

Evtikhiev, V. P.;
Konstantinov, O. V.;
Matveentsev, A. V.;
Romanov, A. E.

Publication type:

Article

Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions.

Published in:

Semiconductors, 2001, v. 35, n. 12, p. 1390, doi. 10.1134/1.1427977

By:

Fedorov, A. V.;
Baranov, A. V.;
Itoh, A.;
Masumoto, Y.

Publication type:

Article

Ostwald Ripening of Quantum-Dot Nanostructures.

Published in:

Semiconductors, 2001, v. 35, n. 12, p. 1378, doi. 10.1134/1.1427975

By:

Vengrenovich, R. D.;
Gudyma, Yu. V.;
Yarema, S. V.

Publication type:

Article

Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures.

Published in:

Semiconductors, 2001, v. 35, n. 12, p. 1383, doi. 10.1134/1.1427976

By:

Sachenko, A. V.;
Kaganovich, É. B.;
Manoılov, É. G.;
Svechnikov, S. V.

Publication type:

Article

Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 550, doi. 10.1134/1.1371620

By:

Agrinskaya, N. V.;
Ivanov, Yu. L.;
Ustinov, V. M.;
Poloskin, D. A.

Publication type:

Article

The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 565

By:

Prokof’ev, A. A.;
Odnoblyudov, M. A.;
Yassievich, I. N.

Publication type:

Article

Study of Decay of Elastically Strained Germanium Film at the Silicon Surface.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 589, doi. 10.1134/1.1188033

By:

Zakurdaev, I. V.;
Baızer, M. V.;
Sadof’ev, S. Yu.;
Rzaev, M. M.

Publication type:

Article

Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures.

Published in:

Semiconductors, 2000, v. 34, n. 3, p. 319, doi. 10.1134/1.1187979

By:

Vavilova, L. S.;
Kapitonov, V. A.;
Livshits, D. A.;
Lyutetskiı, A. V.;
Murashova, A. V.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Tarasov, I. S.

Publication type:

Article

Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands.

Published in:

Semiconductors, 2000, v. 34, n. 2, p. 195, doi. 10.1134/1.1187932

By:

Sobolev, M. M.;
Kochnev, I. V.;
Lantratov, V. M.;
Bert, N. A.;
Cherkashin, N. A.;
Ledentsov, N. N.;
Bedarev, D. A.

Publication type:

Article

Magnetic Phase Diagram of the Triangular Antiferromagnetic Cs2CuCl4−xBrx Mixed System.

Published in:

Annalen der Physik, 2018, v. 530, n. 12, p. N.PAG, doi. 10.1002/andp.201800270

By:

Well, Natalija;
Zaharko, Oksana;
Delley, Bernard;
Skoulatos, Markos;
Georgii, Robert;
Smaalen, Sander;
Rüegg, Christian

Publication type:

Article

RECENT APPLICATIONS OF THE DMRG METHOD.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, v. 20, n. 19, p. 2624, doi. 10.1142/S0217979206035102

By:

HALLBERG, KAREN

Publication type:

Article

KINETIC CONFINEMENT AND ZERO-ELECTRIC-FIELD BINDING IN HgCdTe ACCUMULATION LAYERS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 27-29, p. 3637, doi. 10.1142/S0217979204027189

By:

Radantsev, V. F.;
Kulaev, G. I.;
Kruzhaev, V. V.

Publication type:

Article

Simulation of laser radiation effects on low dimensionality structures.

Published in:

Journal of Molecular Modeling, 2013, v. 19, n. 5, p. 2091, doi. 10.1007/s00894-012-1658-y

By:

Ramírez, Iliana;
Usma, Jorge;
López, Francisco

Publication type:

Article

Recent advances in the development of low-dimensional materials for electrochemical applications: CECRI, Karaikudi.

Published in:

Current Science (00113891), 2015, v. 108, n. 5, p. 789

By:

Alwarappan, Subbiah;
Pillai, Vijayamohanan K.

Publication type:

Article

Early warning signs for saddle-escape transitions in complex networks.

Published in:

Scientific Reports, 2015, p. 13190, doi. 10.1038/srep13190

By:

Kuehn, Christian;
Zschaler, Gerd;
Gross, Thilo

Publication type:

Article

Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene.

Published in:

Scientific Reports, 2015, p. 11623, doi. 10.1038/srep11623

By:

Chen, H.-H.;
Su, S. H.;
Chang, S.-L.;
Cheng, B.-Y.;
Chen, S. W.;
Chen, H.-Y.;
Lin, M.-F.;
Huang, J. C. A.

Publication type:

Article

Progress of High-Resolution Photoemission Spectroscopy in Strongly Correlated Electron Systems.

Published in:

Surface Review & Letters, 2002, v. 9, n. 2, p. 995, doi. 10.1142/S0218625X02001902

By:

Takahashi, Takashi

Publication type:

Article

LONG-RANGE FERROMAGNETIC ORDER IN ONE-DIMENSIONAL MONATOMIC Co-CHAINS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 5/6, p. 1029, doi. 10.1142/S0219581X05004029

By:

Gambardella, P.;
Dallmeyer, A.;
Maiti, K.;
Malagoli, M. C.;
Eberhardt, W.;
Kern, K.;
Carbone, C.

Publication type:

Article

Assembling of low-dimensional aggregates with interlaminar electromagnetic synergy network for high-efficient microwave absorption.

Published in:

Advanced Powder Materials, 2023, v. 2, n. 2, p. 1, doi. 10.1016/j.apmate.2022.100100

By:

Fei Pan;
Xiaofen Wu;
Batalu, Dan;
Wei Lu;
Hongtao Guan

Publication type:

Article

THE OPTICAL POLARON IN A TUNABLE POTENTIAL WELL.

Published in:

Modern Physics Letters B, 2011, v. 25, n. 20, p. 1713, doi. 10.1142/S0217984911026930

By:

SAQQA, B.;
AL-MOKAYED, M. T.;
RADWAN, M. A.;
ABOU EL-ELA, F. M.

Publication type:

Article

ACOUSTIC PHONON TRANSPORT THROUGH A QUANTUM WAVEGUIDE WITH TWO PARTLY-OVERLAPPED STUBS.

Published in:

Modern Physics Letters B, 2009, v. 23, n. 19, p. 2353, doi. 10.1142/S0217984909020539

By:

LI, HONGJIAN;
YAN, SHUHUAN;
ZHANG, HAIYAN;
XIE, SUXIA;
ZHOU, XIN

Publication type:

Article

LASER INDUCED METAL INSULATOR TRANSITION THROUGH EXCITON MECHANISM IN QUANTUM WELL SYSTEMS.

Published in:

Modern Physics Letters B, 2009, v. 23, n. 9, p. 1229, doi. 10.1142/S0217984909019223

By:

Rajashabala, S.;
Kanmani, S. S.;
Navaneethakrishnan, K.

Publication type:

Article

Chemical Equilibrium on Low Dimensional Supports: Connecting the Microscopic Mechanism to the Macroscopic Observations.

Published in:

Journal of Statistical Physics, 2015, v. 161, n. 1, p. 210, doi. 10.1007/s10955-015-1314-x

By:

Bullara, D.;
Decker, Y.

Publication type:

Article