Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 11
Results: 23
Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon.
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- Semiconductors, 2004, v. 38, n. 11, p. 1241, doi. 10.1134/1.1823052
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(IV<sub>2</sub>)<sub>1 – x</sub>(III–V)<sub>x</sub> Solid Solutions Obtained from a Bounded Tin Melt–Solution.
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- Semiconductors, 2004, v. 38, n. 11, p. 1245, doi. 10.1134/1.1823053
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Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO<sub>2</sub> Thermal Oxide Using Selective Etching.
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- Semiconductors, 2004, v. 38, n. 11, p. 1254, doi. 10.1134/1.1823054
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On the High-Dose Effect in the Case of Ion Implantation of Silicon.
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- Semiconductors, 2004, v. 38, n. 11, p. 1260, doi. 10.1134/1.1823055
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A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.
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- Semiconductors, 2004, v. 38, n. 11, p. 1263, doi. 10.1134/1.1823056
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Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.
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- Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057
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Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu.
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- Semiconductors, 2004, v. 38, n. 11, p. 1275, doi. 10.1134/1.1823058
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Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu<sup>+</sup> and Ru<sup>2+</sup>.
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- Semiconductors, 2004, v. 38, n. 11, p. 1280, doi. 10.1134/1.1823059
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A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures.
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- Semiconductors, 2004, v. 38, n. 11, p. 1284, doi. 10.1134/1.1823060
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Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.
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- Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
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Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge<sub>33</sub>As<sub>12</sub>Se<sub>55</sub>–Sb Heterostructures.
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- Semiconductors, 2004, v. 38, n. 11, p. 1298, doi. 10.1134/1.1823062
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The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction.
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- Semiconductors, 2004, v. 38, n. 11, p. 1302, doi. 10.1134/1.1823063
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The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass.
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- Semiconductors, 2004, v. 38, n. 11, p. 1304, doi. 10.1134/1.1823064
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Photoelectric Properties of ZnO/CuPc/Si Structures.
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- Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
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Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.
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- Semiconductors, 2004, v. 38, n. 11, p. 1312, doi. 10.1134/1.1823066
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Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.
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- Semiconductors, 2004, v. 38, n. 11, p. 1316, doi. 10.1134/1.1823067
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MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
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- Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
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Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069
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Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System.
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- Semiconductors, 2004, v. 38, n. 11, p. 1332, doi. 10.1134/1.1823070
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Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots.
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- Semiconductors, 2004, v. 38, n. 11, p. 1340, doi. 10.1134/1.1823071
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Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals.
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- Semiconductors, 2004, v. 38, n. 11, p. 1344, doi. 10.1134/1.1823072
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Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.
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- Semiconductors, 2004, v. 38, n. 11, p. 1350, doi. 10.1134/1.1823073
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Properties of GaSb-Based LEDs with Grid Ohmic Contacts.
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- Semiconductors, 2004, v. 38, n. 11, p. 1356, doi. 10.1134/1.1823074
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