Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 11

Results: 23

On the High-Dose Effect in the Case of Ion Implantation of Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1260, doi. 10.1134/1.1823055

By:

Tetelbaum, D. I.;
Gerasimov, A. I.

Publication type:

Article

A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1263, doi. 10.1134/1.1823056

By:

Bibilashvili, A. P.;
Gerasimov, A. B.

Publication type:

Article

Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057

By:

Krivolapchuk, V. V.;
Kozhanova, Yu. V.;
Lundin, V. V.;
Mezdrogina, M. M.;
Rodin, S. N.;
Yusupova, Sh. A.

Publication type:

Article

Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1275, doi. 10.1134/1.1823058

By:

Kuchakova, T. A.;
Vesna, G. V.;
Makara, V. A.

Publication type:

Article

Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu+ and Ru2+.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1280, doi. 10.1134/1.1823059

By:

Aleksandrova, E. L.;
Khimich, N. N.

Publication type:

Article

Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1241, doi. 10.1134/1.1823052

By:

Zavodinsky, V. G.;
Gnidenko, A. A.;
Misiuk, A.;
Bak-Misiuk, J.

Publication type:

Article

(IV2)1 – x(III–V)x Solid Solutions Obtained from a Bounded Tin Melt–Solution.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1245, doi. 10.1134/1.1823053

By:

Sapaev, B.;
Saidov, M. S.;
Saidov, A. S.;
Karazhanov, S. Zh.

Publication type:

Article

Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO2 Thermal Oxide Using Selective Etching.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1254, doi. 10.1134/1.1823054

By:

Dunaevski&icaron;, M. S.;
Grob, J. J.;
Zabrodski&icaron;, A. G.;
Laiho, R.;
Titkov, A. N.

Publication type:

Article

A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1284, doi. 10.1134/1.1823060

By:

Aleksandrova, E. L.;
Dudkina, M. M.;
Ten'kovtsev, A. V.

Publication type:

Article

Photosensitive Structures Based on HgGa2S4 Single Crystals: Preparation and Properties.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061

By:

Rud, V. Yu.;
Rud, Yu. V.;
Ba&icaron;ramov, B. Kh.;
Il'chuk, G. A.;
Ukrainets, V. O.;
Fernelius, N.;
Shunemann, P. G.

Publication type:

Article

Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge33As12Se55–Sb Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1298, doi. 10.1134/1.1823062

By:

Kondrat, A. B.;
Popovich, N. I.;
Dovgoshej, N. I.

Publication type:

Article

The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1302, doi. 10.1134/1.1823063

By:

Gadzhialiev, M. M.;
Pirmagomedov, Z. Sh.;
Éfendieva, T. N.

Publication type:

Article

The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1304, doi. 10.1134/1.1823064

By:

Parchinski&icaron;, P. B.;
Vlasov, S. I.;
Nasirov, A. A.

Publication type:

Article

Photoelectric Properties of ZnO/CuPc/Si Structures.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1312, doi. 10.1134/1.1823066

By:

Mityagin, Yu. A.;
Murzin, V. N.;
Efimov, Yu. A.;
Pishchulin, A. A.;
Pyrkov, V. N.

Publication type:

Article

Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1344, doi. 10.1134/1.1823072

By:

Konstantinova, E.A.;
Ryabchikov, Yu.V.;
Osminkina, L.A.;
Vorontsov, A.S.;
Kashkarov, P.K.

Publication type:

Article

Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1316, doi. 10.1134/1.1823067

By:

Vedernikov, A. I.;
Chaplik, A. V.

Publication type:

Article

Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1350, doi. 10.1134/1.1823073

By:

Morozov, Yu. A.;
Nefedov, I. S.;
Aleshkin, V. Ya.

Publication type:

Article

Properties of GaSb-Based LEDs with Grid Ohmic Contacts.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1356, doi. 10.1134/1.1823074

By:

Imenkov, A.N.;
Grebenshchikova, E.A.;
Zhurtanov, B.E.;
Danilova, T.N.;
Sipovskaya, M.A.;
Vlasenko, N.V.;
Yakovlev, Yu.P.

Publication type:

Article

MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068

By:

Lundin, V. V.;
Zavarin, E. E.;
Besulkin, A. I.;
Gladyshev, A. G.;
Sakharov, A. V.;
Kokorev, M. F.;
Shmidt, N. M.;
Tsatsul'nikov, A. F.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Kakanakov, R.

Publication type:

Article

Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069

By:

Galiev, G. B.;
Kaminski&icaron;, V. É;
Vasil'evskií, I. S.;
Kul'bachinskií, V. A.;
Lunin, R. A.

Publication type:

Article

Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1332, doi. 10.1134/1.1823070

By:

Bozhevolnov, V. B.;
Yafyasov, A. M.;
Konorov, P. P.

Publication type:

Article

Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1340, doi. 10.1134/1.1823071

By:

Tsukanov, A. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 11

On the High-Dose Effect in the Case of Ion Implantation of Silicon.

A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.

Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.

Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu.

Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu<sup>+</sup> and Ru<sup>2+</sup>.

Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon.

(IV<sub>2</sub>)<sub>1 – x</sub>(III–V)<sub>x</sub> Solid Solutions Obtained from a Bounded Tin Melt–Solution.

Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO<sub>2</sub> Thermal Oxide Using Selective Etching.

A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures.

Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.

Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge<sub>33</sub>As<sub>12</sub>Se<sub>55</sub>–Sb Heterostructures.

The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction.

The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass.

Photoelectric Properties of ZnO/CuPc/Si Structures.

Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.

Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals.

Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.

Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.

Properties of GaSb-Based LEDs with Grid Ohmic Contacts.

MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.

Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System.

Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots.