Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 10

Results: 18

Photosensitive Polymer Semiconductors.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1115, doi. 10.1134/1.1808819
By:
- Aleksandrova, E. L.
Publication type:
Article
Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1160, doi. 10.1134/1.1808820
By:
- Gamarts, A. E.;
- Lebedev, V. M.;
- Moshnikov, V. A.;
- Chesnokova, D. B.
Publication type:
Article
Electronic and Structural Transitions in Pb1 – xGexTe:Ga Alloys under Pressure.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1164, doi. 10.1134/1.1808821
By:
- Skipetrov, E. P.;
- Zvereva, E. A.;
- Volkova, O. S.;
- Golubev, A. V.;
- Mollaev, A. Yu.;
- Arslanov, R. K.;
- Slyn'ko, V. E.
Publication type:
Article
Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 – XTe Layers.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1168, doi. 10.1134/1.1808822
By:
- Bakhtin, P. A.;
- Dvoretskii, S. A.;
- Varavin, V. S.;
- Korobkin, A. P.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.
Publication type:
Article
Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1172, doi. 10.1134/1.1808823
By:
- Bakhtin, P. A.;
- Dvoretskii, S. A.;
- Varavin, V. S.;
- Korobkin, A. P.;
- Mikhailov, N. N.;
- Sabinina, I. V.;
- Sidorov, Yu. G.
Publication type:
Article
Formation and Study of Buried SiC Layers with a High Content of Radiation Defects.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1176, doi. 10.1134/1.1808824
By:
- Bogdanova, E. V.;
- Kozlovski, V. V.;
- Rumyantsev, D. S.;
- Volkova, A. A.;
- Lebedev, A. A.
Publication type:
Article
A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1179, doi. 10.1134/1.1808825
By:
- Titov, A. I.;
- Karasev, P. A.;
- Kucheyev, S. O.
Publication type:
Article
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1187, doi. 10.1134/1.1808826
By:
- Kalinina, E. V.;
- Kholuyanov, G. F.;
- Onushkin, G. A.;
- Davydov, D. V.;
- Strel'chuk, A. M.;
- Konstantinov, A. O.;
- Hallén, A.;
- Nikiforov, A. Yu.;
- Skuratov, V. A.;
- Havancsak, K.
Publication type:
Article
Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1192, doi. 10.1134/1.1808827
By:
- Bodnar', I. V.;
- Nikitin, S. E.;
- Il'chuk, G. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Yakushev, M. V.
Publication type:
Article
Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO2:Cu–Ag Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1198, doi. 10.1134/1.1808828
By:
- Slobodchikov, S. V.;
- Russu, E. V.;
- Ivanov, É V.;
- Malinin, Yu. G.;
- Salikhov, Kh. M.
Publication type:
Article
Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100).
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1202, doi. 10.1134/1.1808829
By:
- Tonkikh, A. A.;
- Cirlin, G. E.;
- Dubrovskii, V. G.;
- Ustinov, V. M.;
- Werner, P.
Publication type:
Article
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1207, doi. 10.1134/1.1808830
By:
- Maksimov, M. V.;
- Sizov, D. S.;
- Makarov, A. G.;
- Kayander, I. N.;
- Asryan, L. V.;
- Zhukov, A. E.;
- Ustinov, V. M.;
- Cherkashin, N. A.;
- Bert, N. A.;
- Ledentsov, N. N.;
- Bimberg, D.
Publication type:
Article
Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1212, doi. 10.1134/1.1808831
By:
- Pshenai-Severin, D. A.;
- Ravich, Yu. I.
Publication type:
Article
Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1217, doi. 10.1134/1.1808832
By:
- Tonkikh, A. A.;
- Cirlin, G. E.;
- Samsonenko, Yu. B.;
- Soshnikov, P.;
- Ustinov, V. M.
Publication type:
Article
Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1221, doi. 10.1134/1.1808833
By:
- Kazanskii, A. G.;
- Khabarova, K. Yu.
Publication type:
Article
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1225, doi. 10.1134/1.1808834
By:
- Yakimov, A. I.;
- Dvurechenskii, A. V.;
- Kirienko, V. V.;
- Stepina, N. P.;
- Nikiforov, A. I.;
- Ul'yanov, V. V.;
- Chaikovskii, S. V.;
- Volodin, V. A.;
- Efremov, M. D.;
- Seksenbaev, M. S.;
- Shamirzaev, T. S.;
- Zhuravlev, K. S.
Publication type:
Article
Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1230, doi. 10.1134/1.1808835
By:
- Zotova, N. V.;
- II'inskaya, N. D.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyi, M. A.;
- Stus', N. M.;
- Shustov, V. V.
Publication type:
Article
Microwave Field-Effect Transistors Based on Group-III Nitrides.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1235, doi. 10.1134/1.1808836
By:
- Aleksandrov, S. B.;
- Baranov, D. A.;
- Kaidash, A. P.;
- Krasovitskii, D. M.;
- Pavlenko, M. V.;
- Petrov, S. I.;
- Pogorel'skii, Yu. V.;
- Sokolov, I. A.;
- Stepanov, M. V.;
- Chalyi, V. P.;
- Gladysheva, N. B.;
- Dorofeev, A. A.;
- Matveev, Yu. A.;
- Chernyavskii, A. A.
Publication type:
Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 10

Photosensitive Polymer Semiconductors.

Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis.

Electronic and Structural Transitions in Pb<sub>1 – x</sub>Ge<sub>x</sub>Te:Ga Alloys under Pressure.

Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown Cd<sub>X</sub>Hg<sub>1 – X</sub>Te Layers.

Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe.

Formation and Study of Buried SiC Layers with a High Content of Radiation Defects.

A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions.

Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.

Fabrication and Photosensitivity of Heterojunctions Based on CuIn<sub>3</sub>Se<sub>5</sub> Crystals.

Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO<sub>2</sub>:Cu–Ag Heterostructures.

Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100).

Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures.

Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons.

Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique.

Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon.

Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines.

Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface.

Microwave Field-Effect Transistors Based on Group-III Nitrides.