Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 9
Results: 25
Certain Features of Ga Diffusion in ZnS Powders.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 987, doi. 10.1134/1.1797471
- By:
- Publication type:
- Article
Impact-Ionization Autosolitons in Compensated Silicon.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 992, doi. 10.1134/1.1797472
- By:
- Publication type:
- Article
Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 996, doi. 10.1134/1.1797473
- By:
- Publication type:
- Article
Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 998, doi. 10.1134/1.1797474
- By:
- Publication type:
- Article
Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1001, doi. 10.1134/1.1797475
- By:
- Publication type:
- Article
Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1005, doi. 10.1134/1.1797476
- By:
- Publication type:
- Article
Interfaces and Roughness in a Multilayer Silicon Structure.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1012, doi. 10.1134/1.1797477
- By:
- Publication type:
- Article
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
- By:
- Publication type:
- Article
Interaction of C<sub>60</sub> Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1023, doi. 10.1134/1.1797479
- By:
- Publication type:
- Article
Radiative Recombination in a Silicon MOS Tunnel Structure.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1030, doi. 10.1134/1.1797480
- By:
- Publication type:
- Article
Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1036, doi. 10.1134/1.1797481
- By:
- Publication type:
- Article
Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1041, doi. 10.1134/1.1797482
- By:
- Publication type:
- Article
Electrical Properties of Metal–Semiconductor Nanocontacts.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1047, doi. 10.1134/1.1797483
- By:
- Publication type:
- Article
Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1053, doi. 10.1134/1.1797484
- By:
- Publication type:
- Article
Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1061, doi. 10.1134/1.1797485
- By:
- Publication type:
- Article
Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1065, doi. 10.1134/1.1797486
- By:
- Publication type:
- Article
Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1074, doi. 10.1134/1.1797487
- By:
- Publication type:
- Article
Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb<sup>+2</sup>.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1078, doi. 10.1134/1.1797488
- By:
- Publication type:
- Article
Carrier Drift Mobility in Porous Silicon Carbide.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1081, doi. 10.1134/1.1797489
- By:
- Publication type:
- Article
Quartz Microtubes Based on Macroporous Silicon.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1084, doi. 10.1134/1.1797490
- By:
- Publication type:
- Article
Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1088, doi. 10.1134/1.1797491
- By:
- Publication type:
- Article
A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1092, doi. 10.1134/1.1797492
- By:
- Publication type:
- Article
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1099, doi. 10.1134/1.1797493
- By:
- Publication type:
- Article
Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1105, doi. 10.1134/1.1797494
- By:
- Publication type:
- Article
Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1111, doi. 10.1134/1.1797495
- By:
- Publication type:
- Article