Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 7
Results: 24
Local Symmetry of the Pb<sub>1 – x</sub>Sn<sub>x</sub>Se Lattice near the Zero-Gap State.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 742, doi. 10.1134/1.1777592
- By:
- Publication type:
- Article
Interphase Interactions and Features of Structural Relaxation in TiB<sub>x</sub>–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 737, doi. 10.1134/1.1777591
- By:
- Publication type:
- Article
Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 745, doi. 10.1134/1.1777593
- By:
- Publication type:
- Article
Specific Thermoelectric Properties of Lightly Doped Bi<sub>2</sub>(TeSe)<sub>3</sub> Solid Solutions.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 778, doi. 10.1134/1.1777599
- By:
- Publication type:
- Article
Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 782, doi. 10.1134/1.1777600
- By:
- Publication type:
- Article
The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr<sub>2</sub>Se<sub>4</sub>.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 763, doi. 10.1134/1.1777596
- By:
- Publication type:
- Article
Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 769, doi. 10.1134/1.1777597
- By:
- Publication type:
- Article
Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 775, doi. 10.1134/1.1777598
- By:
- Publication type:
- Article
Study of the Electrical Properties of Cd<sub>x</sub>Hg<sub>1 – x</sub>Te.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 751, doi. 10.1134/1.1777594
- By:
- Publication type:
- Article
Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 758, doi. 10.1134/1.1777595
- By:
- Publication type:
- Article
Localization of a Longitudinal Autosoliton in InSb.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 788, doi. 10.1134/1.1777601
- By:
- Publication type:
- Article
Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 791, doi. 10.1134/1.1777602
- By:
- Publication type:
- Article
Hysteresis in Ag<sub>2</sub>Te near and within the Phase Transition Region.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 796, doi. 10.1134/1.1777603
- By:
- Publication type:
- Article
Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 800, doi. 10.1134/1.1777604
- By:
- Publication type:
- Article
Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 807, doi. 10.1134/1.1777605
- By:
- Publication type:
- Article
Nonlinear Properties of Phototropic Media on the Basis of Cu<sub>x</sub>Se Nanoparticles in Quartz Glass.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 812, doi. 10.1134/1.1777606
- By:
- Publication type:
- Article
Radiative Recombination in Ge<sup>+</sup>-Implanted SiO<sub>2</sub> Films Annealed under Hydrostatic Pressure.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 818, doi. 10.1134/1.1777607
- By:
- Publication type:
- Article
The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/Al<sub>x</sub>Ga<sub>1 – x</sub>As Superlattices.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 824, doi. 10.1134/1.1777608
- By:
- Publication type:
- Article
Kapitsa Effect in Crystals with Superlattices.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 830, doi. 10.1134/1.1777609
- By:
- Publication type:
- Article
Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an In<sub>x</sub>Ga<sub>1 – x</sub>As Matrix on a GaAs Substrate.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 833, doi. 10.1134/1.1777610
- By:
- Publication type:
- Article
Mechanism of Dicke Superradiance in Semiconductor Heterostructures.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 837, doi. 10.1134/1.1777611
- By:
- Publication type:
- Article
Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 842, doi. 10.1134/1.1777612
- By:
- Publication type:
- Article
Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 849, doi. 10.1134/1.1777613
- By:
- Publication type:
- Article
Leakage Currents over the Surface of CdHgTe-Based Photodiodes.
- Published in:
- Semiconductors, 2004, v. 38, n. 7, p. 855, doi. 10.1134/1.1777614
- By:
- Publication type:
- Article