Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 6

Results: 20

Magnetic Properties of Carbon Structures.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 615, doi. 10.1134/1.1766362
By:
- Makarova, T.L.
Publication type:
Article
A Study of Recombination Centers in Irradiated p-Si Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 639, doi. 10.1134/1.1766363
By:
- Pagava, T.A.
Publication type:
Article
Long-Wavelength Edge of the Spectrum of Hot Electron–Hole Plasma Radiation in Photoexcited Indium Arsenide.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 644, doi. 10.1134/1.1766364
By:
- Shatkovskis, E.;
- Česnys, A.
Publication type:
Article
A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 648, doi. 10.1134/1.1766365
By:
- Altybaev, G.S.;
- Bronevo&icaron;, I.L.;
- Kumekov, S.E.
Publication type:
Article
Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 652, doi. 10.1134/1.1766366
By:
- Aleksandrova, E.L.;
- Nosova, G.I.;
- Solovskaya, N.A.;
- Romashkova, K.A.;
- Luk'yashina, V.A.;
- Konozobko, E.V.;
- Kudryavtsev, V.V.
Publication type:
Article
Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 657, doi. 10.1134/1.1766367
By:
- Matyash, I.E.;
- Serdega, B.K.
Publication type:
Article
Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al–n–n+-Si–Al Schottky Barrier Structures.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 663, doi. 10.1134/1.1766368
By:
- Vorobets, G.I.;
- Vorobets, M.M.;
- Strebezhev, V.N.;
- buzaneva, E.V.;
- Shkavro, A.G.
Publication type:
Article
Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 666, doi. 10.1134/1.1766369
By:
- Davydov, A.B.;
- Aronzon, B.A.
Publication type:
Article
Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 Heterojunction.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 672, doi. 10.1134/1.1766370
By:
- Ataev, B.M.;
- Alivov, Ya.I.;
- Mamedov, V.V.;
- Makhmudov, S.Sh.;
- Magomedov, B.A.
Publication type:
Article
High-Frequency Barrier Capacitance of Metal–Semiconductor Contacts and Abrupt p–n Junctions.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 675, doi. 10.1134/1.1766371
By:
- Murygin, V.I.
Publication type:
Article
Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 678, doi. 10.1134/1.1766372
By:
- Lundin, W.V.;
- Sakharov, A.V.;
- Tsatsul'nikov, A.F.;
- Zavarin, E.E.;
- Besyul'kin, A.I.;
- Fomin, A.V.;
- Sizov, D.S.
Publication type:
Article
Structural Defects at the Semiconductor–Ferroelectric Interface.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 683, doi. 10.1134/1.1766373
By:
- Berman, L.S.;
- Titkov, I.E.
Publication type:
Article
Electron–Electron Scattering in Stepped Quantum Wells.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 689, doi. 10.1134/1.1766374
By:
- Zerova, V.L.;
- Vorob'ev, L.E.;
- Zegrya, G.G.
Publication type:
Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
By:
- Maksimov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Musikhin, Yu.G.;
- Ledentsov, N.N.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Spectroscopy of Exciton States of InAs Quantum Molecules.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 696, doi. 10.1134/1.1766375
By:
- Talalaev, V.G.;
- Tomm, J.W.;
- Zakharov, N.D.;
- Werner, P.;
- Novikov, B.V.;
- Cirlin, G.É.;
- Samsonenko, Yu.B.;
- Tonkikh, A.A.;
- Egorov, V.A.;
- Polyakov, N.K.;
- Ustinov, V.M.
Publication type:
Article
Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 712, doi. 10.1134/1.1766377
By:
- Goryachev, D.N.;
- Belyakov, L.V.;
- Sreseli, O.M.
Publication type:
Article
Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 717, doi. 10.1134/1.1766378
By:
- Grebenshchikova, A.;
- Imenkov, A.N.;
- Zhurtanov, B.E.;
- Danilova, T.N.;
- Sipovskaya, M.A.;
- Blasenko, N.V.;
- Yakovlev, Yu.P.
Publication type:
Article
Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 724, doi. 10.1134/1.1766379
By:
- Shulekin, A.F.;
- Tyaginov, S.É.;
- Khlil, R.;
- El Hdiy, A.;
- Vexler, M.I.
Publication type:
Article
Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380
By:
- Karachinsky, L.Ya.;
- Gordeev, N.Yu.;
- Novikov, I.I.;
- Maximov, M.V.;
- Kovsh, A.R.;
- Wang, J.S.;
- Hsiao, R.S.;
- Chi, J.Y.;
- Ustinov, V.M.;
- Ledentsov, N.N.
Publication type:
Article
Role of Si-Doped Al0.3Ga0.7As Layers in the High-Frequency Conductivity of GaAs/Al0.3Ga0.7As Heterostructures under Conditions of the Quantum Hall Effect.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 702, doi. 10.1134/1.1766376
By:
- Drichko, I.L.;
- D'yakonov, A.M.;
- Smirnov, I.Yu.;
- Gal'perin, Yu.M.;
- Preobrazhenski&icaron;, V.V.;
- Toropov, A.I.
Publication type:
Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 6

Magnetic Properties of Carbon Structures.

A Study of Recombination Centers in Irradiated p-Si Crystals.

Long-Wavelength Edge of the Spectrum of Hot Electron–Hole Plasma Radiation in Photoexcited Indium Arsenide.

A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses.

Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone.

Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals.

Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al–n–n<sup>+</sup>-Si–Al Schottky Barrier Structures.

Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures.

Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/α-Al<sub>2</sub>O<sub>3</sub> Heterojunction.

High-Frequency Barrier Capacitance of Metal–Semiconductor Contacts and Abrupt p–n Junctions.

Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition.

Structural Defects at the Semiconductor–Ferroelectric Interface.

Electron–Electron Scattering in Stepped Quantum Wells.

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.

Spectroscopy of Exciton States of InAs Quantum Molecules.

Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration.

Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs.

Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure.

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.

Role of Si-Doped Al<sub>0.3</sub>Ga<sub>0.7</sub>As Layers in the High-Frequency Conductivity of GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Heterostructures under Conditions of the Quantum Hall Effect.