Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 6

Results: 20

Magnetic Properties of Carbon Structures.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 615, doi. 10.1134/1.1766362

By:

Makarova, T.L.

Publication type:

Article

Long-Wavelength Edge of the Spectrum of Hot Electron–Hole Plasma Radiation in Photoexcited Indium Arsenide.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 644, doi. 10.1134/1.1766364

By:

Shatkovskis, E.;
Česnys, A.

Publication type:

Article

A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 648, doi. 10.1134/1.1766365

By:

Altybaev, G.S.;
Bronevo&icaron;, I.L.;
Kumekov, S.E.

Publication type:

Article

Role of Si-Doped Al0.3Ga0.7As Layers in the High-Frequency Conductivity of GaAs/Al0.3Ga0.7As Heterostructures under Conditions of the Quantum Hall Effect.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 702, doi. 10.1134/1.1766376

By:

Drichko, I.L.;
D'yakonov, A.M.;
Smirnov, I.Yu.;
Gal'perin, Yu.M.;
Preobrazhenski&icaron;, V.V.;
Toropov, A.I.

Publication type:

Article

A Study of Recombination Centers in Irradiated p-Si Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 639, doi. 10.1134/1.1766363

By:

Pagava, T.A.

Publication type:

Article

Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 712, doi. 10.1134/1.1766377

By:

Goryachev, D.N.;
Belyakov, L.V.;
Sreseli, O.M.

Publication type:

Article

Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 652, doi. 10.1134/1.1766366

By:

Aleksandrova, E.L.;
Nosova, G.I.;
Solovskaya, N.A.;
Romashkova, K.A.;
Luk'yashina, V.A.;
Konozobko, E.V.;
Kudryavtsev, V.V.

Publication type:

Article

Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al–n–n+-Si–Al Schottky Barrier Structures.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 663, doi. 10.1134/1.1766368

By:

Vorobets, G.I.;
Vorobets, M.M.;
Strebezhev, V.N.;
buzaneva, E.V.;
Shkavro, A.G.

Publication type:

Article

Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 657, doi. 10.1134/1.1766367

By:

Matyash, I.E.;
Serdega, B.K.

Publication type:

Article

Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 Heterojunction.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 672, doi. 10.1134/1.1766370

By:

Ataev, B.M.;
Alivov, Ya.I.;
Mamedov, V.V.;
Makhmudov, S.Sh.;
Magomedov, B.A.

Publication type:

Article

Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 666, doi. 10.1134/1.1766369

By:

Davydov, A.B.;
Aronzon, B.A.

Publication type:

Article

High-Frequency Barrier Capacitance of Metal–Semiconductor Contacts and Abrupt p–n Junctions.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 675, doi. 10.1134/1.1766371

By:

Murygin, V.I.

Publication type:

Article

Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 678, doi. 10.1134/1.1766372

By:

Lundin, W.V.;
Sakharov, A.V.;
Tsatsul'nikov, A.F.;
Zavarin, E.E.;
Besyul'kin, A.I.;
Fomin, A.V.;
Sizov, D.S.

Publication type:

Article

Structural Defects at the Semiconductor–Ferroelectric Interface.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 683, doi. 10.1134/1.1766373

By:

Berman, L.S.;
Titkov, I.E.

Publication type:

Article

Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 724, doi. 10.1134/1.1766379

By:

Shulekin, A.F.;
Tyaginov, S.É.;
Khlil, R.;
El Hdiy, A.;
Vexler, M.I.

Publication type:

Article

Electron–Electron Scattering in Stepped Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 689, doi. 10.1134/1.1766374

By:

Zerova, V.L.;
Vorob'ev, L.E.;
Zegrya, G.G.

Publication type:

Article

Spectroscopy of Exciton States of InAs Quantum Molecules.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 696, doi. 10.1134/1.1766375

By:

Talalaev, V.G.;
Tomm, J.W.;
Zakharov, N.D.;
Werner, P.;
Novikov, B.V.;
Cirlin, G.É.;
Samsonenko, Yu.B.;
Tonkikh, A.A.;
Egorov, V.A.;
Polyakov, N.K.;
Ustinov, V.M.

Publication type:

Article

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380

By:

Karachinsky, L.Ya.;
Gordeev, N.Yu.;
Novikov, I.I.;
Maximov, M.V.;
Kovsh, A.R.;
Wang, J.S.;
Hsiao, R.S.;
Chi, J.Y.;
Ustinov, V.M.;
Ledentsov, N.N.

Publication type:

Article

Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 717, doi. 10.1134/1.1766378

By:

Grebenshchikova, A.;
Imenkov, A.N.;
Zhurtanov, B.E.;
Danilova, T.N.;
Sipovskaya, M.A.;
Blasenko, N.V.;
Yakovlev, Yu.P.

Publication type:

Article

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381

By:

Maksimov, M.V.;
Shernyakov, Yu.M.;
Kryzhanovskaya, N.V.;
Gladyshev, A.G.;
Musikhin, Yu.G.;
Ledentsov, N.N.;
Zhukov, A.E.;
Vasil'ev, A.P.;
Kovsh, A.R.;
Mikhrin, S.S.;
Semenova, E.S.;
Maleev, N.A.;
Nikitina, E.V.;
Ustinov, V.M.;
Alferov, Zh.I.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 6

Magnetic Properties of Carbon Structures.

Long-Wavelength Edge of the Spectrum of Hot Electron–Hole Plasma Radiation in Photoexcited Indium Arsenide.

A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses.

Role of Si-Doped Al<sub>0.3</sub>Ga<sub>0.7</sub>As Layers in the High-Frequency Conductivity of GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Heterostructures under Conditions of the Quantum Hall Effect.

A Study of Recombination Centers in Irradiated p-Si Crystals.

Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration.

Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone.

Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al–n–n<sup>+</sup>-Si–Al Schottky Barrier Structures.

Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals.

Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/α-Al<sub>2</sub>O<sub>3</sub> Heterojunction.

Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures.

High-Frequency Barrier Capacitance of Metal–Semiconductor Contacts and Abrupt p–n Junctions.

Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition.

Structural Defects at the Semiconductor–Ferroelectric Interface.

Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure.

Electron–Electron Scattering in Stepped Quantum Wells.

Spectroscopy of Exciton States of InAs Quantum Molecules.

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.

Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs.

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.