Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 5
Results: 27
Electrical Properties of Layered FeGaInS<sub>4</sub> Single Crystals.
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- Semiconductors, 2004, v. 38, n. 5, p. 505, doi. 10.1134/1.1755878
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Dependence of Dicarbon Annealing Temperature in n-Si on Oxygen Concentration in the Crystal.
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- Semiconductors, 2004, v. 38, n. 5, p. 495, doi. 10.1134/1.1755876
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Equilibrium Characteristics and Low-Temperature Photoluminescence of CdTe:Pb Single Crystals.
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- Semiconductors, 2004, v. 38, n. 5, p. 499, doi. 10.1134/1.1755877
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Features of Thermal Radiation of Plane-Parallel Semiconductor Wafers.
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- Semiconductors, 2004, v. 38, n. 5, p. 507, doi. 10.1134/1.1755879
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Nonlinear Absorption of Light by Zn<sub>0.37</sub>Cd<sub>0.63</sub>Se Solid Solutions.
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- Semiconductors, 2004, v. 38, n. 5, p. 512, doi. 10.1134/1.1755880
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- Article
Mobility of Minority Charge Carriers in p-HgCdTe Films.
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- Semiconductors, 2004, v. 38, n. 5, p. 514, doi. 10.1134/1.1755881
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- Article
Optical Properties of Synthetic Diamond Single Crystals.
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- Semiconductors, 2004, v. 38, n. 5, p. 520, doi. 10.1134/1.1755882
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Phase Conjugation on the Surface of Optically Excited ZnO.
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- Semiconductors, 2004, v. 38, n. 5, p. 524, doi. 10.1134/1.1755883
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Paramagnetic Structural Defects and Conductivity in Hydrogenated Nanocrystalline Carbon-Doped Silicon Films.
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- Semiconductors, 2004, v. 38, n. 5, p. 528, doi. 10.1134/1.1755884
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Electrical Properties of MnIn<sub>2</sub>Se<sub>4</sub>.
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- Semiconductors, 2004, v. 38, n. 5, p. 531, doi. 10.1134/1.1755885
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- Article
Plasmon–Phonon–Polaritons in p-Doped Bi–Sb Alloys.
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- Semiconductors, 2004, v. 38, n. 5, p. 533, doi. 10.1134/1.1755886
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MOCVD Growth and Mg-Doping of InAs Layers.
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- Semiconductors, 2004, v. 38, n. 5, p. 537, doi. 10.1134/1.1755887
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- Article
Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide.
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- Semiconductors, 2004, v. 38, n. 5, p. 543, doi. 10.1134/1.1755888
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- Article
Variation in the Built-in Potential of a Photodiode Based on an n-InSe–p-GaSe Heterojunction in the Course of Aging.
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- Semiconductors, 2004, v. 38, n. 5, p. 546, doi. 10.1134/1.1755889
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On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.
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- Semiconductors, 2004, v. 38, n. 5, p. 550, doi. 10.1134/1.1755890
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- Article
Theory of Tunneling Current in Metal–Semiconductor Contacts with Subsurface Isotype δ-Doping.
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- Semiconductors, 2004, v. 38, n. 5, p. 554, doi. 10.1134/1.1755891
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Geometric Structure and Spectral Characteristics of Electronic States in Silicon Nanoparticles.
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- Semiconductors, 2004, v. 38, n. 5, p. 560, doi. 10.1134/1.1755892
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Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures.
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- Semiconductors, 2004, v. 38, n. 5, p. 565, doi. 10.1134/1.1755893
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- Article
Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation.
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- Semiconductors, 2004, v. 38, n. 5, p. 572, doi. 10.1134/1.1755894
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Vertical Transport of Hot Electrons in GaAs/AlAs Superlattices.
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- Semiconductors, 2004, v. 38, n. 5, p. 576, doi. 10.1134/1.1755895
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- Article
Interaction of Infrared Radiation with Free Carriers in Mesoporous Silicon.
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- Semiconductors, 2004, v. 38, n. 5, p. 581, doi. 10.1134/1.1755896
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Photoconductivity of Polymer Compositions with a High Content of Organic Dyes.
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- Semiconductors, 2004, v. 38, n. 5, p. 588, doi. 10.1134/1.1755897
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Tensoresistive Effect in Porous Silicon Layers with Different Morphology.
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- Semiconductors, 2004, v. 38, n. 5, p. 594, doi. 10.1134/1.1755898
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ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets.
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- Semiconductors, 2004, v. 38, n. 5, p. 598, doi. 10.1134/1.1755899
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Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon.
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- Semiconductors, 2004, v. 38, n. 5, p. 603, doi. 10.1134/1.1755900
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- Article
Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.
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- Semiconductors, 2004, v. 38, n. 5, p. 607, doi. 10.1134/1.1755901
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Kinetics of Electroluminescence in an Efficient Silicon Light-Emitting Diode with Thermally Stable Spectral Characteristics.
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- Semiconductors, 2004, v. 38, n. 5, p. 610, doi. 10.1134/1.1755902
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