Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 4

Results: 20

A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1–x Quantum Dots.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 447, doi. 10.1134/1.1734672

By:

Kunets, V. P.;
Kulish, N. R.;
Lisitsa, M. P.;
Bryksa, V. P.

Publication type:

Article

A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 369, doi. 10.1134/1.1734660

By:

Petukhov, B. V.

Publication type:

Article

Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 376, doi. 10.1134/1.1734661

By:

Orlov, A. M.;
Skvortsov, A. A.;
Salanov, A. A.

Publication type:

Article

Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 380, doi. 10.1134/1.1734662

By:

Sermakasheva, N. L.;
Novikov, G. F.;
Shul'ga, Yu. M.;
Semenov, V. N.

Publication type:

Article

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 387, doi. 10.1134/1.1734663

By:

Brunkov, P. N.;
Gutkin, A. A.;
Moiseenko, A. K.;
Musikhin, Yu. G.;
Chaldyshev, V. V.;
Cherkashin, N. N.;
Konnikov, S. G.;
Preobrazhenski&icaron;, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664

By:

Nikitin, S. E.;
Nikolaev, Yu A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.;
Fernelius, N.;
Goldstein, J.

Publication type:

Article

A Small-Molecule Organic Semiconductor.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 468, doi. 10.1134/1.1734676

By:

Yakuphanoglu, F.;
Aydin, M.;
Arsu, N.;
Sekerci, M.

Publication type:

Article

Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 397, doi. 10.1134/1.1734665

By:

Kadushkin, V. I.

Publication type:

Article

Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 402, doi. 10.1134/1.1734666

By:

Katerinchuk, V. N.;
Kovalyuk, Z. D.

Publication type:

Article

Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667

By:

Va&icaron;polin, A. A.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 410, doi. 10.1134/1.1734668

By:

Glukhov, K. E.;
Bercha, A. I.;
Korbutyak, D. V.;
Litovchenko, V. G.

Publication type:

Article

Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Dubrovski&icaron;, Yu. V.

Publication type:

Article

Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670

By:

Karpovich, I. A.;
Levichev, B. N.;
Levichev, S. B.;
Baidus, N. V.;
Tikhov, S. V.;
Filatov, D. O.;
Gorshkov, A. P.;
Ermakov, S. Yu.

Publication type:

Article

Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 437, doi. 10.1134/1.1734671

By:

Khabarov, Yu. V.;
Kapaev, V. V.;
Petrov, V. A.

Publication type:

Article

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 451, doi. 10.1134/1.1734673

By:

Brunkov, P. N.;
Usov, S. O.;
Musikhin, Yu G.;
Zhukov, A. E.;
Cirlin, G. E.;
Ustinov, V. M.;
Konnikov, S. G.;
Rasulova, G. K.

Publication type:

Article

Electrical Properties of Fine-Grained Polycrystalline CdTe.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 455, doi. 10.1134/1.1734674

By:

Kolosov, S. A.;
Klevkov, Yu. V.;
Plotnikov, A. F.

Publication type:

Article

Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 461, doi. 10.1134/1.1734675

By:

Sachenko, A. A.;
Korbutyak, D. V.;
Kryuchenko, Yu. V.;
Sreseli, O. M.

Publication type:

Article

Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 472, doi. 10.1134/1.1734677

By:

Verbitskaya, E. M.;
Eremin, V. K.;
Ivanov, A. M.;
Strokan, N. B.;
Vasil'ev, V. I.;
Gavrin, V. N.;
Veretenkin, E. P.;
Kozlova, Yu. P.;
Kulikov, V. B.;
Markov, A. V.;
Polyakov, A. Ya.

Publication type:

Article

Investigation of Characteristics of InSb-Based Photodiode Linear Arrays.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 480, doi. 10.1134/1.1734678

By:

Biryulin, P. V.;
Turinov, V. I.;
Yakimov, E. B.

Publication type:

Article

Thermal Calculation of SiC p–i–n Diodes.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 486, doi. 10.1134/1.1734679

By:

Gamuletskaya, P. B.;
Kirillov, A. V.;
Lebedev, A. A.;
Romanov, L. P.;
Smirnov, V. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 4

A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdS<sub>x</sub>Se<sub>1–</sub><sub>x</sub> Quantum Dots.

A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals.

Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions.

Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds.

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.

Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.

A Small-Molecule Organic Semiconductor.

Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum.

Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics.

Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.

Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)<sub>N</sub>/(AlAs)<sub>M</sub> Superlattices: The Effect of the Boundary Conditions.

Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.

Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.

Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells.

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

Electrical Properties of Fine-Grained Polycrystalline CdTe.

Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon.

Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.

Investigation of Characteristics of InSb-Based Photodiode Linear Arrays.

Thermal Calculation of SiC p–i–n Diodes.