Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 2
Results: 23
A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum.
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- Semiconductors, 2004, v. 38, n. 2, p. 150, doi. 10.1134/1.1648365
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Electrical Properties of MnIn[sub 2]S[sub 4] Single Crystals.
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- Semiconductors, 2004, v. 38, n. 2, p. 163, doi. 10.1134/1.1648368
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Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification.
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- Semiconductors, 2004, v. 38, n. 2, p. 153, doi. 10.1134/1.1648366
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Current–Voltage Characteristics of MnIn[sub 2]S[sub 4] and MnGa[sub 2]S[sub 4] Single Crystals.
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- Semiconductors, 2004, v. 38, n. 2, p. 161, doi. 10.1134/1.1648367
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The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the Metal–Insulator Transition.
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- Semiconductors, 2004, v. 38, n. 2, p. 192, doi. 10.1134/1.1648375
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Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films.
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- Semiconductors, 2004, v. 38, n. 2, p. 125, doi. 10.1134/1.1648363
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Molecular-Beam Epitaxy Doping of Gallium Nitride with Magnesium from Ammonia.
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- Semiconductors, 2004, v. 38, n. 2, p. 148, doi. 10.1134/1.1648364
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Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].
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- Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369
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Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films.
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- Semiconductors, 2004, v. 38, n. 2, p. 175, doi. 10.1134/1.1648371
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Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x](x=0.06,0.12) Solid Solutions.
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- Semiconductors, 2004, v. 38, n. 2, p. 182, doi. 10.1134/1.1648372
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Observation of the Bose Condensation of Cooper Pairs in (Pb[sub 1 – ][sub x]Sn[sub x])[sub 1 – ][sub z]In[sub z]Te Semiconductor Solid Solutions.
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- Semiconductors, 2004, v. 38, n. 2, p. 185, doi. 10.1134/1.1648373
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Substitutional 3d Impurities in Cubic Silicon Carbide.
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- Semiconductors, 2004, v. 38, n. 2, p. 189, doi. 10.1134/1.1648374
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Magnetic Properties of Germanium-Doped Cadmium Telluride.
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- Semiconductors, 2004, v. 38, n. 2, p. 169, doi. 10.1134/1.1648370
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Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.
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- Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376
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Spectroscopy of Excitonic Polaritons in Strained II–VI Semiconductor Structures with Wide Quantum Wells.
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- Semiconductors, 2004, v. 38, n. 2, p. 225, doi. 10.1134/1.1648382
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Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel.
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- Semiconductors, 2004, v. 38, n. 2, p. 232, doi. 10.1134/1.1648383
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Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers.
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- Semiconductors, 2004, v. 38, n. 2, p. 239, doi. 10.1134/1.1648385
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Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattices.
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- Semiconductors, 2004, v. 38, n. 2, p. 202, doi. 10.1134/1.1648377
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Experimental Study of SiC p–i–n Diodes in the 3-cm Range.
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- Semiconductors, 2004, v. 38, n. 2, p. 237, doi. 10.1134/1.1648384
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Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots.
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- Semiconductors, 2004, v. 38, n. 2, p. 209, doi. 10.1134/1.1648378
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Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures.
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- Semiconductors, 2004, v. 38, n. 2, p. 213, doi. 10.1134/1.1648379
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Energy Structure of A[sup +] Centers in Quantum Wells.
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- Semiconductors, 2004, v. 38, n. 2, p. 217, doi. 10.1134/1.1648380
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TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.
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- Semiconductors, 2004, v. 38, n. 2, p. 221, doi. 10.1134/1.1648381
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