Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 2

Results: 23

Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 202, doi. 10.1134/1.1648377

By:

Borinsenko, S. I.

Publication type:

Article

Observation of the Bose Condensation of Cooper Pairs in (Pb[sub 1 – ][sub x]Sn[sub x])[sub 1 – ][sub z]In[sub z]Te Semiconductor Solid Solutions.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 185, doi. 10.1134/1.1648373

By:

Nemov, S. A.;
Seregin, P. P.;
Volkov, V. P.;
Seregin, N. P.;
Shamshur, D. V.

Publication type:

Article

The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the Metal–Insulator Transition.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 192, doi. 10.1134/1.1648375

By:

Egorov, S. V.;
Zabrodski&icaron;, A. G.;
Parfen'ev, R. V.

Publication type:

Article

A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 150, doi. 10.1134/1.1648365

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Savkina, N. S.;
Syvajarvi, M.;
Yakimova, R.

Publication type:

Article

Substitutional 3d Impurities in Cubic Silicon Carbide.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 189, doi. 10.1134/1.1648374

By:

Parfenova, I. I.

Publication type:

Article

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 125, doi. 10.1134/1.1648363

By:

Lebedev, A. A.;
Ivanov, A. M.;
Strokan, N. B.

Publication type:

Article

Molecular-Beam Epitaxy Doping of Gallium Nitride with Magnesium from Ammonia.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 148, doi. 10.1134/1.1648364

By:

Vorob'ev, A. A.;
Korablev, V. V.;
Karpov, S. Yu.

Publication type:

Article

Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 153, doi. 10.1134/1.1648366

By:

Lebedev, M. V.;
Mayer, Th.;
Jaegermann, W.

Publication type:

Article

Current–Voltage Characteristics of MnIn[sub 2]S[sub 4] and MnGa[sub 2]S[sub 4] Single Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 161, doi. 10.1134/1.1648367

By:

Niftiev, N. N.;
Tagiev, O. B.;
Jaegermann, W.

Publication type:

Article

Electrical Properties of MnIn[sub 2]S[sub 4] Single Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 163, doi. 10.1134/1.1648368

By:

Niftiev, N. N.

Publication type:

Article

Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369

By:

Bodnar, I. V.;
Rud, V. Yu.;
Rud, Yu. V.

Publication type:

Article

Magnetic Properties of Germanium-Doped Cadmium Telluride.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 169, doi. 10.1134/1.1648370

By:

Shaldin, Yu. V.;
Warchulska, I.;
Ivanov, Yu. M.

Publication type:

Article

Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 175, doi. 10.1134/1.1648371

By:

Gridchin, V. A.;
Lubimsky, V. M.

Publication type:

Article

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x](x=0.06,0.12) Solid Solutions.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 182, doi. 10.1134/1.1648372

By:

Zhitinskaya, M. K.;
Nemov, S. A.;
Svechnikova, T. E.;
Müller, E.

Publication type:

Article

Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376

By:

Bodnar, I. V.;
Polubok, V. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Serginov, M. S.

Publication type:

Article

Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 209, doi. 10.1134/1.1648378

By:

Bezyazychnaya, T. V.;
Zelenkovski&icaron;, V. M.;
Ryabtsev, G. I.;
Sobolev, M. M.

Publication type:

Article

Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 213, doi. 10.1134/1.1648379

By:

Kulikov, V. B.;
Avetisyan, G. H.;
Vasilevskaya, L. M.;
Zalevski&icaron;, I. D.;
Budkin, I. V.;
Padalitsa, A. A.

Publication type:

Article

Energy Structure of A[sup +] Centers in Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 217, doi. 10.1134/1.1648380

By:

Averkiev, N. S.;
Zhukov, A. E.;
Ivanov, Yu. L.;
Petrov, P. V.;
Romanov, K. S.;
Tonkikh, A. A.;
Ustinov, V. M.;
Tsyrlin, G. E.

Publication type:

Article

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 221, doi. 10.1134/1.1648381

By:

Afanasiev, V. P.;
Gudovskikh, A. S.;
Kazak-Kazakevich, A. Z.;
Sazanov, A. P.;
Trapeznikova, I. N.;
Terukov, E. I.

Publication type:

Article

Spectroscopy of Excitonic Polaritons in Strained II–VI Semiconductor Structures with Wide Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 225, doi. 10.1134/1.1648382

By:

Markov, S. A.;
Seisyan, R. P.;
Kosobukin, V. A.

Publication type:

Article

Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 232, doi. 10.1134/1.1648383

By:

Gergel, V. A.;
Gulyaev, Yu. V.;
Zeleny&icaron;, A. P.;
Yakupov, M. N.

Publication type:

Article

Experimental Study of SiC p–i–n Diodes in the 3-cm Range.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 237, doi. 10.1134/1.1648384

By:

Vasilevski&icaron;, K. V.;
Gamuletskaya, P. B.;
Kirillov, A. V.;
Lebedev, A. A.;
Romanov, L. P.;
Smirnov, V. A.

Publication type:

Article

Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 239, doi. 10.1134/1.1648385

By:

Afonenko, A. A.;
Aleshkin, V. Ya.;
Dubinov, A. A.

Publication type:

Article