Theory of Threshold Characteristics of Semiconductor Quantum Dot Lasers.
- Published in:
- Semiconductors, 2004, v. 38, n. 1, p. 1, doi. 10.1134/1.1641126
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 1
Results: 19
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The Evolution of Surface Structures in p-CdTe Crystals under Pulsed Laser Irradiation.
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- Semiconductors, 2004, v. 38, n. 1, p. 23, doi. 10.1134/1.1641127
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- Article
3
Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr).
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- Semiconductors, 2004, v. 38, n. 1, p. 27, doi. 10.1134/1.1641128
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- Article
4
Green Luminescence Band of Zinc Oxide Films Copper-Doped by Thermal Diffusion.
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- Semiconductors, 2004, v. 38, n. 1, p. 31, doi. 10.1134/1.1641129
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- Publication type:
- Article
5
Transformation of Luminescence Centers in CVD ZnS Films Subjected to a High Hydrostatic Pressure.
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- Semiconductors, 2004, v. 38, n. 1, p. 36, doi. 10.1134/1.1641130
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- Article
6
The Influence of Impurities on Radiative Recombination via EL2 Centers in Gallium Arsenide Single Crystals.
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- Semiconductors, 2004, v. 38, n. 1, p. 42, doi. 10.1134/1.1641131
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- Publication type:
- Article
7
Structurally Complex Two-Hole and Two-Electron Slow Traps with Bikinetic Properties in p-ZnTe and n-ZnS Crystals.
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- Semiconductors, 2004, v. 38, n. 1, p. 48, doi. 10.1134/1.1641132
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- Article
8
Universal Analytical Approximation of the Carrier Mobility in Semiconductors for a Wide Range of Temperatures and Doping Densities.
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- Semiconductors, 2004, v. 38, n. 1, p. 56, doi. 10.1134/1.1641133
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- Article
9
Effect of Hydrogen on the Electronic Structure and Properties of Boron Nitrides.
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- Semiconductors, 2004, v. 38, n. 1, p. 61, doi. 10.1134/1.1641134
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- Article
10
Diffusion of Zinc into InP with an Unprotected Surface.
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- Semiconductors, 2004, v. 38, n. 1, p. 68, doi. 10.1134/1.1641135
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- Article
11
Donor Compensation in the Depletion Layer of CdF[sub 2] Crystals with a Schottky Barrier.
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- Semiconductors, 2004, v. 38, n. 1, p. 72, doi. 10.1134/1.1641136
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- Publication type:
- Article
12
Formation of Ohmic Contacts on Semi-Insulating GaAs by Laser Deposition of In.
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- Semiconductors, 2004, v. 38, n. 1, p. 78, doi. 10.1134/1.1641137
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- Publication type:
- Article
13
The Investigation of Structural Perfection of Cd[sub x]Hg[sub 1 – x]Te/CdZnTe Epitaxial Layers by the Raman Scattering Method.
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- Semiconductors, 2004, v. 38, n. 1, p. 82, doi. 10.1134/1.1641138
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- Publication type:
- Article
14
Electron Transfer between Semiconductor Quantum Dots via Laser-Induced Resonance Transitions.
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- Semiconductors, 2004, v. 38, n. 1, p. 91, doi. 10.1134/1.1641139
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- Article
15
Recombination Statistics and Kinetics in Semiconductor Nanostructures.
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- Semiconductors, 2004, v. 38, n. 1, p. 99, doi. 10.1134/1.1641140
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- Publication type:
- Article
16
Formation of Nanocrystalline Silicon Films Using High-Dose H[sup +] Ion Implantation into Silicon-on-Insulator Layers with Subsequent Rapid Thermal Annealing.
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- Semiconductors, 2004, v. 38, n. 1, p. 107, doi. 10.1134/1.1641141
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- Article
17
The Effect of a Au Impurity on the Photoluminescence of Porous Si and Photovoltage on Porous-Si Structures.
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- Semiconductors, 2004, v. 38, n. 1, p. 113, doi. 10.1134/1.1641142
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- Article
18
Effect of a Fullerene Coating on the Photoluminescence of Porous Silicon.
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- Semiconductors, 2004, v. 38, n. 1, p. 120, doi. 10.1134/1.1641143
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- Publication type:
- Article
19
Émmanuil Il’ich Adirovich (On the 30th Anniversary of His Death).
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- Semiconductors, 2004, v. 38, n. 1, p. 124, doi. 10.1134/1.1641144
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- Publication type:
- Article