Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 12

Results: 15

Redistribution of Ytterbium and Oxygen in Annealing of Silicon Layers Amorphized by Implantation.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1363, doi. 10.1134/1.1634654
By:
- Aleksandrov, O. V.;
- Nikolaev, Yu. A.;
- Sobolev, N. A.;
- Asomoza, R.;
- Kudriavtsev, Yu.;
- Villegas, A.;
- Godines, A.
Publication type:
Article
Two-Electron Tin Centers Formed in Lead Chalcogenides as a Result of Nuclear Transmutations.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1367, doi. 10.1134/1.1634655
By:
- Nemov, S. A.;
- Seregin, P. P.;
- Kozhanova, Yu. V.;
- Seregin, N. P.
Publication type:
Article
Specific Features of Conductivity of Cd[sub 1 – x]Zn[sub x]Te and Cd[sub 1 – x]Mn[sub x]Te Single Crystals.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1373, doi. 10.1134/1.1634656
By:
- Kosyachenko, L. A.;
- Markov, A. V.;
- Maslyanchuk, E. L.;
- Rarenko, I. M.;
- Sklyarchuk, V. M.
Publication type:
Article
Photoluminescence at 1.5 μm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1380, doi. 10.1134/1.1634657
By:
- Batalov, R. I.;
- Bayazitov, R. M.;
- Andreev, B. A.;
- Kryzhkov, D. I.;
- Terukov, E. I.;
- Kudoyarova, V. Kh.
Publication type:
Article
Investigation of the ZnS–CdHgTe Interface.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1383, doi. 10.1134/1.1634658
By:
- Biryulin, P. V.;
- Dudko, S. A.;
- Konovalov, S. A.;
- Pelevin, Yu. A.;
- V. I. Turinov, Yu. A.
Publication type:
Article
Mechanisms of Photocurrent Generation in In[sub 2]O[sub 3]–InSe Heterojunctions.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1387, doi. 10.1134/1.1634659
By:
- Makhniy, V. P.;
- Yanchuk, O.I.
Publication type:
Article
Spin Depolarization in Spontaneously Polarized Low-Dimensional Systems.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1390, doi. 10.1134/1.1634660
By:
- Shelykh, I. A.;
- Bagraev, N. T.;
- Klyachkin, L. E.
Publication type:
Article
Fabrication and Optical Properties of Photonic Crystals Based on Opal–GaP and Opal–GaPN Composites.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1400, doi. 10.1134/1.1634661
By:
- Gadzhiev, G. M.;
- Golubev, V. G.;
- Zamoryanskaya, M. V.;
- Kurdyukov, D. A.;
- Medvedev, A. V.;
- Merz, J.;
- Mintairov, A.;
- Pevtsov, A. B.;
- Sel'kin, A. V.;
- Travnikov, V. V.;
- Sharenkova, N. V.
Publication type:
Article
Room-Temperature 1.5–1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1406, doi. 10.1134/1.1634662
By:
- Tonkikh, A. A.;
- Tsyrlin, G. E.;
- Talalaev, V. G.;
- Novikov, B. V.;
- Egorov, V. A.;
- Polyakov, N. K.;
- Samsonenko, Yu. B.;
- Ustinov, V. M.;
- Zakharov, N. D.;
- Werner, P.
Publication type:
Article
Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663
By:
- Zhukov, A. E.;
- Vasil'yev, A. P.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Semenova, E. S.;
- Egorov, A. Yu.;
- Odnoblyudov, V. A.;
- Maleev, N. A.;
- Nikitina, E. V.;
- Kryjanovskaya, N. V.;
- Gladyshev, A. G.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Ledentsov, N. N.;
- Ustinov, V. M.;
- Alferov, Zh. I.
Publication type:
Article
Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1414, doi. 10.1134/1.1634664
By:
- Grebenshchikova, E. A.;
- Imenkov, A. N.;
- Zhurtanov, B. E.;
- Danilova, T. N.;
- Chernyaev, A. V.;
- Viasenko, N. V.;
- Yakovlev, Yu. P.
Publication type:
Article
MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1421, doi. 10.1134/1.1634665
By:
- Vinokurov, D. A.;
- Zorina, S. A.;
- Kapitonov, V. A.;
- Leshko, A. Yu.;
- Lyutetski&ibreve;, A. V.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Shamakhov, V. V.;
- Tarasov, I. S.
Publication type:
Article
Picosecond High-Voltage Drift Diodes Based on Gallium Arsenide.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1425, doi. 10.1134/1.1634666
By:
- Rozhkov, A. V.;
- Kozlov, V. A.
Publication type:
Article
Impact-Ionization Wave Breakdown and Generation of Picosecond Pulses in the Ultrahigh-Frequency Band in GaAs Drift Step-Recovery Diodes.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1428, doi. 10.1134/1.1634667
By:
- Kozlov, V. A.;
- Rozhkov, A. V.;
- Kardo-Sysoev, A. F.
Publication type:
Article
Vladimir Idelevich Perel’ (On His 75th Birthday).
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1430, doi. 10.1134/1.1634668
Publication type:
Article