Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 12

Results: 15

Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663

By:

Zhukov, A. E.;
Vasil'yev, A. P.;
Kovsh, A. R.;
Mikhrin, S. S.;
Semenova, E. S.;
Egorov, A. Yu.;
Odnoblyudov, V. A.;
Maleev, N. A.;
Nikitina, E. V.;
Kryjanovskaya, N. V.;
Gladyshev, A. G.;
Shernyakov, Yu. M.;
Maximov, M. V.;
Ledentsov, N. N.;
Ustinov, V. M.;
Alferov, Zh. I.

Publication type:

Article

Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1414, doi. 10.1134/1.1634664

By:

Grebenshchikova, E. A.;
Imenkov, A. N.;
Zhurtanov, B. E.;
Danilova, T. N.;
Chernyaev, A. V.;
Viasenko, N. V.;
Yakovlev, Yu. P.

Publication type:

Article

Impact-Ionization Wave Breakdown and Generation of Picosecond Pulses in the Ultrahigh-Frequency Band in GaAs Drift Step-Recovery Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1428, doi. 10.1134/1.1634667

By:

Kozlov, V. A.;
Rozhkov, A. V.;
Kardo-Sysoev, A. F.

Publication type:

Article

Redistribution of Ytterbium and Oxygen in Annealing of Silicon Layers Amorphized by Implantation.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1363, doi. 10.1134/1.1634654

By:

Aleksandrov, O. V.;
Nikolaev, Yu. A.;
Sobolev, N. A.;
Asomoza, R.;
Kudriavtsev, Yu.;
Villegas, A.;
Godines, A.

Publication type:

Article

Two-Electron Tin Centers Formed in Lead Chalcogenides as a Result of Nuclear Transmutations.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1367, doi. 10.1134/1.1634655

By:

Nemov, S. A.;
Seregin, P. P.;
Kozhanova, Yu. V.;
Seregin, N. P.

Publication type:

Article

Specific Features of Conductivity of Cd[sub 1 – x]Zn[sub x]Te and Cd[sub 1 – x]Mn[sub x]Te Single Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1373, doi. 10.1134/1.1634656

By:

Kosyachenko, L. A.;
Markov, A. V.;
Maslyanchuk, E. L.;
Rarenko, I. M.;
Sklyarchuk, V. M.

Publication type:

Article

Photoluminescence at 1.5 μm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1380, doi. 10.1134/1.1634657

By:

Batalov, R. I.;
Bayazitov, R. M.;
Andreev, B. A.;
Kryzhkov, D. I.;
Terukov, E. I.;
Kudoyarova, V. Kh.

Publication type:

Article

Investigation of the ZnS–CdHgTe Interface.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1383, doi. 10.1134/1.1634658

By:

Biryulin, P. V.;
Dudko, S. A.;
Konovalov, S. A.;
Pelevin, Yu. A.;
V. I. Turinov, Yu. A.

Publication type:

Article

Spin Depolarization in Spontaneously Polarized Low-Dimensional Systems.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1390, doi. 10.1134/1.1634660

By:

Shelykh, I. A.;
Bagraev, N. T.;
Klyachkin, L. E.

Publication type:

Article

Mechanisms of Photocurrent Generation in In[sub 2]O[sub 3]–InSe Heterojunctions.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1387, doi. 10.1134/1.1634659

By:

Makhniy, V. P.;
Yanchuk, O.I.

Publication type:

Article

Fabrication and Optical Properties of Photonic Crystals Based on Opal–GaP and Opal–GaPN Composites.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1400, doi. 10.1134/1.1634661

By:

Gadzhiev, G. M.;
Golubev, V. G.;
Zamoryanskaya, M. V.;
Kurdyukov, D. A.;
Medvedev, A. V.;
Merz, J.;
Mintairov, A.;
Pevtsov, A. B.;
Sel'kin, A. V.;
Travnikov, V. V.;
Sharenkova, N. V.

Publication type:

Article

Room-Temperature 1.5–1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1406, doi. 10.1134/1.1634662

By:

Tonkikh, A. A.;
Tsyrlin, G. E.;
Talalaev, V. G.;
Novikov, B. V.;
Egorov, V. A.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1421, doi. 10.1134/1.1634665

By:

Vinokurov, D. A.;
Zorina, S. A.;
Kapitonov, V. A.;
Leshko, A. Yu.;
Lyutetski&ibreve;, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Stankevich, A. L.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Picosecond High-Voltage Drift Diodes Based on Gallium Arsenide.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1425, doi. 10.1134/1.1634666

By:

Rozhkov, A. V.;
Kozlov, V. A.

Publication type:

Article

Vladimir Idelevich Perel’ (On His 75th Birthday).

Published in:: Semiconductors, 2003, v. 37, n. 12, p. 1430, doi. 10.1134/1.1634668
Publication type:: Article