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Results: 25

Galvanomagnetic Effects in Atomic-Disordered HgSe[sub 1 – ][sub x]S[sub x] Compounds.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1278, doi. 10.1134/1.1626208
By:
- Kar'kin, A. E.;
- Shchennikov, V. V.;
- Danilov, S. E.;
- Arbuzov, V. A.;
- Goshchitski&ibreve;, B. N.
Publication type:
Article
Photosensitive Structure on CdGa[sub 2]S[sub 4] Single Crystals.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1283, doi. 10.1134/1.1626209
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Va&ibreve;polin, A. A.;
- Bodnar', I. V.;
- Fernelius, N.
Publication type:
Article
Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1291, doi. 10.1134/1.1626210
By:
- Nikitins, S. E.;
- Nikolaev, Yu. A.;
- Polushina, I. K.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
The Thermoelectric Power of a Semiconductor p–n Heterojunction.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1296, doi. 10.1134/1.1626211
By:
- Gadzhialiev, M. M.;
- Pirmagomedov, Z. Sh.
Publication type:
Article
Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1243, doi. 10.1134/1.1626200
By:
- Medvedeva, N. I.;
- Yur'eva, E. I.;
- Ivanovski&ibreve;, A. L.
Publication type:
Article
Optical and Thermal Properties of CuAl[sub x]In[sub 1 – ][sub x]Te[sub 2] Solid Solutions.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1247, doi. 10.1134/1.1626201
By:
- Bodnar', I. V.
Publication type:
Article
Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1252, doi. 10.1134/1.1626202
By:
- Sukach, G. A.;
- Kidalov, V. V.;
- Vlasenko, A. I.;
- Potapenko, E. P.
Publication type:
Article
Effective Electron Mass in a Mn[sub x]Hg[sub 1 – ][sub x]Te System.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1257, doi. 10.1134/1.1626203
By:
- Nesmelova, I. M.
Publication type:
Article
Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1259, doi. 10.1134/1.1626204
By:
- Ushakov, V. V.;
- Klevkov, Yu. V.
Publication type:
Article
Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1264, doi. 10.1134/1.1626205
By:
- Kidalov, V. V.;
- Sukach, G. A.;
- Revenko, A. S.;
- Potapenko, E. P.
Publication type:
Article
Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1266, doi. 10.1134/1.1626206
By:
- Pokrovski&ibreve;, Ya. E.;
- Khval'kovski&ibreve;, N. A.
Publication type:
Article
Defect Formation in PbTe under the Action of a Laser Shock Wave.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1275, doi. 10.1134/1.1626207
By:
- Yakovyna, V. S.;
- Zayachuk, D. M.;
- Berchenko, N. N.
Publication type:
Article
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1326, doi. 10.1134/1.1626218
By:
- Kryzhanovskayal, N. V.;
- Gladyshev, A. G.;
- Kovsh, A. R.;
- Soshnikov, I. P.;
- Tsatsul'nikov, A. F.;
- Kirmse, H.;
- Neumann, W.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1299, doi. 10.1134/1.1626212
By:
- Ole&ibreve;nich-lysyuk, A. V.;
- Beshley, N. P.;
- Fodchuk, I. M.
Publication type:
Article
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1303, doi. 10.1134/1.1626213
By:
- Antonova, I. V.;
- Stuchinski&ibreve;, V. A.;
- Naumova, O. V.;
- Nikolaev, D. V.;
- Popov, V. P.
Publication type:
Article
Photosensitive Structures Based on In[sub 2]S[sub 3] Crystals.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1308, doi. 10.1134/1.1626214
By:
- Bodnar', I. V.;
- Polubok, V. A.;
- Rud, V. Yu.;
- Rud', Yu. V.
Publication type:
Article
Pulsed-Laser Modification of Germanium Nanoclusters in Silicon.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1315, doi. 10.1134/1.1626216
By:
- Volodins, V. A.;
- Gatskevich, E. I.;
- Dvurechenski&ibreve;, A. V.;
- Efremov, M. D.;
- Ivlev, G. D.;
- Nikiforov, A. I.;
- Orekhov, D. A.;
- Yakimov, A. I.
Publication type:
Article
Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1311, doi. 10.1134/1.1626215
By:
- Antyushin, V. F.;
- Budanov, A. V.;
- Kukharenko, D. S.;
- Palishkin, D. A.
Publication type:
Article
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1321, doi. 10.1134/1.1626217
By:
- Bagaev, E. A.;
- Zhuravlev, K. S.;
- Sveshnikova, L. L.;
- Badmaeva, I. A.;
- Repinski&ibreve;, S. M.;
- Voelskow, M.
Publication type:
Article
Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in Cd[sub x]Hg[sub 1 – ][sub x]Te Films.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1331, doi. 10.1134/1.1626219
By:
- Bakhtin, P. A.;
- Varavin, V. S.;
- Dvoretski&ibreve;, S. A.;
- Kravchenko, A. F.;
- Latyshev, A. V.;
- Mikchailov, N. N.;
- Sabinina, I. V.;
- Sidorov, Yu. G.;
- Yakushev, M. V.
Publication type:
Article
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1336, doi. 10.1134/1.1626220
By:
- Valakh, M. Ya.;
- Lisitsa, M. P.;
- Strelchuk, V. V.;
- Vuychik, M. V.;
- Ivanov, S. V.;
- Toropov, A. A.;
- Shubina, T. V.;
- Kop'ev, P. S.
Publication type:
Article
Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1342, doi. 10.1134/1.1626221
By:
- Tetelbaums, D. I.;
- Ezhevski&ibreve;, A. A.;
- Mikhaylov, A. N.
Publication type:
Article
Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5μm) Region.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1345, doi. 10.1134/1.1626222
By:
- Yakimov, A. I.;
- Dvurechenski&ibreve;, A. V.;
- Nikiforov, A. I.;
- Cha&ibreve;kovski&ibreve;, S. V.;
- Ti&ibreve;s, S. A.
Publication type:
Article
Thermoelements with Side Heat Exchange.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1350, doi. 10.1134/1.1626223
By:
- Ashcheulov, A. A.;
- Okhrem, V. G.;
- Okhrem, E. A.
Publication type:
Article
1.7–1.8μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1356, doi. 10.1134/1.1626224
By:
- Lyutetski&ibreve;, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Leshko, A. Yu.;
- Shamakhov, V. V.;
- Andreev, A. Yu.;
- Golikova, E. G.;
- Ryaboshtan, Yu. A.;
- Tarasov, I. S.
Publication type:
Article