Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 9
Results: 22
Thermal Stability and Transformation of C[sub 60] Molecules Deposited on Silicon-Coated (111) Iridium.
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- Semiconductors, 2003, v. 37, n. 9, p. 1037, doi. 10.1134/1.1610114
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Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum.
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- Semiconductors, 2003, v. 37, n. 9, p. 999, doi. 10.1134/1.1610111
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Diffusion of Ytterbium in Silicon.
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- Semiconductors, 2003, v. 37, n. 9, p. 1031, doi. 10.1134/1.1610112
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Migration Energy of Vacancies in p-Type Silicon Crystals.
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- Semiconductors, 2003, v. 37, n. 9, p. 1033, doi. 10.1134/1.1610113
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Microphotoluminescence Spectra of Cadmium Telluride Grown under Nonequilibrium Conditions.
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- Semiconductors, 2003, v. 37, n. 9, p. 1042, doi. 10.1134/1.1610115
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Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices of GaAs During Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 9, p. 1047, doi. 10.1134/1.1610116
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Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect.
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- Semiconductors, 2003, v. 37, n. 9, p. 1053, doi. 10.1134/1.1610117
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Electrical and Thermoelectric Properties of p-Ag[sub 2]Te in the β Phase.
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- Semiconductors, 2003, v. 37, n. 9, p. 1057, doi. 10.1134/1.1610118
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Local Symmetry and Electronic Structure of Tin Atoms in (Pb[sub 1–][sub x]Sn[sub x])[sub 1–][sub z]In[sub z]Te Lattices.
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- Semiconductors, 2003, v. 37, n. 9, p. 1061, doi. 10.1134/1.1610119
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Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb.
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- Semiconductors, 2003, v. 37, n. 9, p. 1063, doi. 10.1134/1.1610120
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On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field.
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- Semiconductors, 2003, v. 37, n. 9, p. 1070, doi. 10.1134/1.1610121
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Effect of Electron Irradiation on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon.
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- Semiconductors, 2003, v. 37, n. 9, p. 1076, doi. 10.1134/1.1610122
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Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates.
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- Semiconductors, 2003, v. 37, n. 9, p. 1080, doi. 10.1134/1.1610123
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Carrier Multiplication in Silicon P–N Junctions.
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- Semiconductors, 2003, v. 37, n. 9, p. 1085, doi. 10.1134/1.1610124
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Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width in GaAs/AlGaAs Structures.
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- Semiconductors, 2003, v. 37, n. 9, p. 1090, doi. 10.1134/1.1610125
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Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice with Doped Quantum Wells.
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- Semiconductors, 2003, v. 37, n. 9, p. 1093, doi. 10.1134/1.1610126
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Effective Cross Section for Photoluminescence Excitation and Lifetime of Excited Er[sup 3+] Ions in Selectively Doped Multilayer Si:Er Structures.
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- Semiconductors, 2003, v. 37, n. 9, p. 1100, doi. 10.1134/1.1610127
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Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
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Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells.
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- Semiconductors, 2003, v. 37, n. 9, p. 1107, doi. 10.1134/1.1610129
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Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs by Rapid Thermal Annealing.
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- Semiconductors, 2003, v. 37, n. 9, p. 1114, doi. 10.1134/1.1610130
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Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
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- Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
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On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes.
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- Semiconductors, 2003, v. 37, n. 9, p. 1123, doi. 10.1134/1.1610132
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