Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 9

Results: 22

Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs by Rapid Thermal Annealing.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1114, doi. 10.1134/1.1610130

By:

Boltovets, N.S.;
Ivanov, V.N.;
Konakova, R.V.;
Lytvyn, P.M.;
Lytvyn, 0.S.;
Miienin, V.V.;
Prokopenko, I.V.

Publication type:

Article

Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1080, doi. 10.1134/1.1610123

By:

Vavilova, L.S.;
Vinokurov, D.A.;
Kapitonov, V.A.;
Murashova, A.V.;
Nevedomski&ibreve;, V.N.;
Poletaev, N.K.;
Sitnikova, A.A.;
Tarasov, I.S.;
Shamakhov, V.V.

Publication type:

Article

Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131

By:

Zhukov, A.E.;
Kovsh, A.R.;
Mikhrin, S.S.;
Semenova, E.S.;
Maleev, N.A.;
Vasil'ev, A.P.;
Nikitina, E.V.;
Kryzhanovskaya, N.V.;
Gladyshev, A.G.;
Shernyakov, Yu.M.;
Musikhin, Yu.G.;
Maksimov, M.V.;
Ledentsov, N.N.;
Ustinov, V.M.;
Alferov, Zh.I.

Publication type:

Article

Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 999, doi. 10.1134/1.1610111

By:

Blank, T.V.;
Gol'dberg, Yu.A.

Publication type:

Article

On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1123, doi. 10.1134/1.1610132

By:

Grekhov, I.V.;
Kyuregyan, A.S.;
Mnatsakanov, T.T.;
Yurkov, S.N.

Publication type:

Article

Diffusion of Ytterbium in Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1031, doi. 10.1134/1.1610112

By:

Nazyrov, D.É.

Publication type:

Article

Migration Energy of Vacancies in p-Type Silicon Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1033, doi. 10.1134/1.1610113

By:

Pagava, T.A.;
Bashele&ibreve;shvili, Z.V.

Publication type:

Article

Thermal Stability and Transformation of C[sub 60] Molecules Deposited on Silicon-Coated (111) Iridium.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1037, doi. 10.1134/1.1610114

By:

Gall, N.R.;
Rut'kov, E.V.;
A.Ya.Tontegode, E.V.

Publication type:

Article

Microphotoluminescence Spectra of Cadmium Telluride Grown under Nonequilibrium Conditions.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1042, doi. 10.1134/1.1610115

By:

Ushakov, V.V.;
Klevkov, Yu.V.

Publication type:

Article

Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices of GaAs During Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1047, doi. 10.1134/1.1610116

By:

Bobrovnikova, I.A.;
Vilisova, M.D.;
Ivonin, I.V.;
Lavrent'eva, L.G.;
Preobrazhenski&ibreve;, V.V.;
Putyato, M.A.;
Semyagin, B.R.;
Subach, S.V.;
Toropov, S.E.

Publication type:

Article

Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1053, doi. 10.1134/1.1610117

By:

Abramov, A.A.;
Gorbaty&ibreve;, I.N.

Publication type:

Article

Electrical and Thermoelectric Properties of p-Ag[sub 2]Te in the β Phase.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1057, doi. 10.1134/1.1610118

By:

Aliev, F.F.

Publication type:

Article

Local Symmetry and Electronic Structure of Tin Atoms in (Pb[sub 1–][sub x]Sn[sub x])[sub 1–][sub z]In[sub z]Te Lattices.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1061, doi. 10.1134/1.1610119

By:

Nemov, S.A.;
Kozhanova, Yu.V.;
Seregin, P.P.;
Seregin, N.P.;
Shamshur, D.V.

Publication type:

Article

Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1063, doi. 10.1134/1.1610120

By:

Kamilov, I.K.;
Stpurenko, A.A.;
Kovalev, A.S.

Publication type:

Article

On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1070, doi. 10.1134/1.1610121

By:

Balagurov, B.Ya.

Publication type:

Article

Effect of Electron Irradiation on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1076, doi. 10.1134/1.1610122

By:

Kazanski&ibreve, A.G.;
Forsh, P.A.;
Khabarova, K.Yu.;
Chukichev, M.V.

Publication type:

Article

Carrier Multiplication in Silicon P–N Junctions.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1085, doi. 10.1134/1.1610124

By:

Serezhkin, Yu.N.;
Shesterkina, A.A.

Publication type:

Article

Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width in GaAs/AlGaAs Structures.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1090, doi. 10.1134/1.1610125

By:

Ivanov, Yu.L.;
Petrov, P.V.;
Tonkikh, A.A.;
Tsyrlin, G.É.;
Ustinov, V.M.

Publication type:

Article

Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice with Doped Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1093, doi. 10.1134/1.1610126

By:

Borisenko, S.I.

Publication type:

Article

Effective Cross Section for Photoluminescence Excitation and Lifetime of Excited Er[sup 3+] Ions in Selectively Doped Multilayer Si:Er Structures.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1100, doi. 10.1134/1.1610127

By:

Gastev, S.V.;
Emel'yanov, A.M.;
Sobolev, N.A.;
Andreev, B.A.;
Krasil'nik, Z.F.;
Shmagin, V.B.

Publication type:

Article

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128

By:

Semenova, E.S.;
Zhukov, A.E.;
Vasil'ev, A.P.;
Mikhrin, S.S.;
Kovsh, A.R.;
Ustinov, V.M.;
Musikhin, Yu.G.;
Blokhin, S.A.;
Gladyshev, A.G.;
Ledentsov, N.N.

Publication type:

Article

Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1107, doi. 10.1134/1.1610129

By:

Mamakin, S.S.;
Yunovich, A.É.;
Wattana, A.B.;
Manyakhin, F.I.

Publication type:

Article