Rare-Earth Elements in the Technology of III–V Compounds and Devices Based on These Compounds.
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- Semiconductors, 2003, v. 37, n. 8, p. 894, doi. 10.1134/1.1601656
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- Article
Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 8
Results: 20
1
2
Electromagnetic Effect in High-Temperature Superconductivity: 15 Years of Investigations (1987–2002) at the Department of Experimental Physics of St. Petersburg State Technical University.
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- Semiconductors, 2003, v. 37, n. 8, p. 915, doi. 10.1134/1.1601657
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- Article
3
ESR of Interacting Manganese Centers in Gallium Arsenide.
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- Semiconductors, 2003, v. 37, n. 8, p. 872, doi. 10.1134/1.1601652
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- Article
4
Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures.
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- Semiconductors, 2003, v. 37, n. 8, p. 876, doi. 10.1134/1.1601653
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- Article
5
The Role of Dmitriı Nikolaevich Nasledov in the Formation and Development of the Physics and Technology of III–V Semiconductors.
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- Semiconductors, 2003, v. 37, n. 8, p. 867, doi. 10.1134/1.1601651
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- Article
6
The Relaxation of the Neutral State of Manganese in Gallium Arsenide.
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- Semiconductors, 2003, v. 37, n. 8, p. 918, doi. 10.1134/1.1601658
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- Article
7
Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction.
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- Semiconductors, 2003, v. 37, n. 8, p. 985, doi. 10.1134/1.1601669
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- Article
8
Analysis of the Emission Band of V[sub Ga]Te[sub As] Complexes in n-GaAs under Uniaxial Pressure.
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- Semiconductors, 2003, v. 37, n. 8, p. 884, doi. 10.1134/1.1601654
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- Article
9
A Mössbauer Study of Fe Impurity Atoms in Gallium Arsenide.
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- Semiconductors, 2003, v. 37, n. 8, p. 889, doi. 10.1134/1.1601655
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- Article
10
Photosensitive Structures Based on Boron Phosphide Single Crystals.
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- Semiconductors, 2003, v. 37, n. 8, p. 923, doi. 10.1134/1.1601659
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- Article
11
Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes.
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- Semiconductors, 2003, v. 37, n. 8, p. 927, doi. 10.1134/1.1601660
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- Article
12
Wet Chemical Nitridation of (100)GaAs Surface: Effect on Electrical Parameters of Surface-Barrier Au–Ti/GaAs Structures.
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- Semiconductors, 2003, v. 37, n. 8, p. 931, doi. 10.1134/1.1601661
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- Article
13
On the Charge-Transport Mechanisms in Cr–n-InP and Mo–n-InP Diode Structures.
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- Semiconductors, 2003, v. 37, n. 8, p. 936, doi. 10.1134/1.1601662
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- Article
14
Raman and Infrared Spectroscopy of GaN Nanocrystals Grown by Chloride-Hydride Vapor-Phase Epitaxy on Oxidized Silicon.
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- Semiconductors, 2003, v. 37, n. 8, p. 940, doi. 10.1134/1.1601663
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- Article
15
Ultraviolet Radiation Photodetectors Based on Structures Consisting of a Metal and a Wide-Bandgap Semiconductor.
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- Semiconductors, 2003, v. 37, n. 8, p. 944, doi. 10.1134/1.1601664
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- Article
16
Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy.
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- Semiconductors, 2003, v. 37, n. 8, p. 955, doi. 10.1134/1.1601666
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17
High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area.
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- Semiconductors, 2003, v. 37, n. 8, p. 949, doi. 10.1134/1.1601665
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- Article
18
Single-Mode Fast-Tunable Lasers for Laser-Diode Spectroscopy.
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- Semiconductors, 2003, v. 37, n. 8, p. 960, doi. 10.1134/1.1601667
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- Article
19
High-Efficiency LEDs of 1.6–2.4 μm Spectral Range for Medical Diagnostics and Environment Monitoring.
- Published in:
- Semiconductors, 2003, v. 37, n. 8, p. 971, doi. 10.1134/1.1601668
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- Article
20
Synchrotron Investigations of an Electron Energy Spectrum in III–V-Based Nanostructures.
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- Semiconductors, 2003, v. 37, n. 8, p. 992, doi. 10.1134/1.1601670
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- Article