Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 6
Results: 24
Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained by Vapor-Phase Condensation.
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- Semiconductors, 2003, v. 37, n. 6, p. 617, doi. 10.1134/1.1582523
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Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron.
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- Semiconductors, 2003, v. 37, n. 6, p. 620, doi. 10.1134/1.1582524
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A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers.
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- Semiconductors, 2003, v. 37, n. 6, p. 625, doi. 10.1134/1.1582525
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Defect Profiling in Semiconductor Layers by the Electrochemical Method.
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- Semiconductors, 2003, v. 37, n. 6, p. 632, doi. 10.1134/1.1582526
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X-ray Photoelectron Spectroscopy and X-ray Electron-Microprobe Analysis of Single Crystals Based on Bismuth Telluride.
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- Semiconductors, 2003, v. 37, n. 6, p. 636, doi. 10.1134/1.1582527
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Photovoltaic Effects in CdV[sub 2]S[sub 4] Single Crystals and Structures Based on Them.
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- Semiconductors, 2003, v. 37, n. 6, p. 641, doi. 10.1134/1.1582528
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Electrical Properties of Cadmium Telluride Films Synthesized in a Thermal Field with a Temperature Gradient.
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- Semiconductors, 2003, v. 37, n. 6, p. 646, doi. 10.1134/1.1582529
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The Effects of Monovacancies on the Terrace Width during Sublimation from the (111) Surface of a Diamond-Like Crystal.
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- Semiconductors, 2003, v. 37, n. 6, p. 649, doi. 10.1134/1.1582530
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Fabrication and Properties of ZnFe[sub 2]S[sub 4] Single Crystals and Structures Based on Them.
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- Semiconductors, 2003, v. 37, n. 6, p. 656, doi. 10.1134/1.1582531
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Determination of the Absolute Value of the Semiconductor Surface Potential by the Quasi-Static Capacitance–Voltage Characteristics of an MIS Structure.
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- Semiconductors, 2003, v. 37, n. 6, p. 661, doi. 10.1134/1.1582532
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Atomic-Force-Microscopy Visualization of GeSi Buried Nanoislands on Crystal Cleavages in Silicon Structures.
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- Semiconductors, 2003, v. 37, n. 6, p. 667, doi. 10.1134/1.1582533
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Determination of the Parameters of Multilayer Nanostructures Using Two-Wave X-ray Reflectometry.
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- Semiconductors, 2003, v. 37, n. 6, p. 675, doi. 10.1134/1.1582534
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Superradiance in Quantum Heterostructures.
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- Semiconductors, 2003, v. 37, n. 6, p. 681, doi. 10.1134/1.1582535
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- Article
Electron Transport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2003, v. 37, n. 6, p. 686, doi. 10.1134/1.1582536
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Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression of Resonance Tunneling in a Magnetic Field as a...
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- Semiconductors, 2003, v. 37, n. 6, p. 692, doi. 10.1134/1.1582537
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Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures.
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- Semiconductors, 2003, v. 37, n. 6, p. 699, doi. 10.1134/1.1582538
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Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas.
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- Semiconductors, 2003, v. 37, n. 6, p. 705, doi. 10.1134/1.1582539
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On the Temperature Dependence of the dc Conductivity of a Semiconductor Quantum Wire in an Insulator.
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- Semiconductors, 2003, v. 37, n. 6, p. 710, doi. 10.1134/1.1582540
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- Article
The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO[sub 2] Layers.
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- Semiconductors, 2003, v. 37, n. 6, p. 713, doi. 10.1134/1.1582541
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Interband Absorption of Light in Semiconductor Nanostructures.
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- Semiconductors, 2003, v. 37, n. 6, p. 718, doi. 10.1134/1.1582542
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Modification of the Nanostructure of Diamond-like Carbon Films by Bombardment with Xenon Ions.
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- Semiconductors, 2003, v. 37, n. 6, p. 723, doi. 10.1134/1.1582543
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Effect of Illumination on the Rate of Relaxation of Light-induced Metastable States in a-Si:H(B).
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- Semiconductors, 2003, v. 37, n. 6, p. 727, doi. 10.1134/1.1582544
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Efficient Silicon Light-Emitting Diode with Temperature-Stable Spectral Characteristics.
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- Semiconductors, 2003, v. 37, n. 6, p. 730, doi. 10.1134/1.1582545
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Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
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