Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 5

Results: 19

Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 493, doi. 10.1134/1.1575352
By:
- Bolkhovityanov, Yu. B.;
- Pchelyakov, O. P.;
- Sokolov, L. V.;
- Chikichev, S. I.
Publication type:
Article
Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 519, doi. 10.1134/1.1575353
By:
- Galkina, T. I.;
- Klokov, A. Yu.;
- Sharkov, A. I.;
- Korostelin, Yu. V.;
- Zaıtsev, V. V.
Publication type:
Article
Magnetooptical Oscillations in Bismuth at T ≥ 77 K.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 523, doi. 10.1134/1.1575354
By:
- Kondakov, O. V.;
- Ivanov, K. G.
Publication type:
Article
A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 526, doi. 10.1134/1.1575355
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Krivonosov, A. N.;
- Kumekov, S. E.;
- Stegantsov, S. V.
Publication type:
Article
Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 532, doi. 10.1134/1.1575356
By:
- Tkachman, M. G.;
- Shubina, T. V.;
- Jmerik, V. N.;
- Ivanov, S. V.;
- Kop’ev, P. S.;
- Paskova, T.;
- Monemar, B.
Publication type:
Article
Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 537, doi. 10.1134/1.1575357
By:
- Brudnyi, V. N.;
- Grinyaev, S. N.;
- Kolin, N. G.
Publication type:
Article
Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 546, doi. 10.1134/1.1575358
By:
- Smagulova, S. A.;
- Antonova, I. V.;
- Neustroev, E. P.;
- Skuratov, V. A.
Publication type:
Article
Diffusion of Europium in Silicon.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 551, doi. 10.1134/1.1575359
By:
- Nazyrov, D. É.
Publication type:
Article
Photosensitive Structures Based on CdGa[sub 2]Se[sub 4] Single Crystals.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 553, doi. 10.1134/1.1575360
By:
- Vaıpolin, A. A.;
- Nikolaev, Yu. A.;
- Polushina, I. K.;
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Terukov, E. I.;
- Fernelius, N.
Publication type:
Article
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361
By:
- Sizov, D. S.;
- Samsonenko, Yu. B.;
- Tsyrlin, G. E.;
- Polyakov, N. K.;
- Egorov, V. A.;
- Tonkikh, A. A.;
- Zhukov, A. E.;
- Mikhrin, S. S.;
- Vasil’ev, A. P.;
- Musikhin, Yu. G.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.;
- Ledentsov, N. N.
Publication type:
Article
Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 564, doi. 10.1134/1.1575362
By:
- Abramov, I. I.;
- Ignatenko, S. A.;
- Novik, E. G.
Publication type:
Article
Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 569, doi. 10.1134/1.1575363
By:
- Borisenko, S. I.
Publication type:
Article
Electronic and Optical Properties of AlAs/Al[sub x]Ga[sub 1 – ][sub x]As(110) Superlattices.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 573, doi. 10.1134/1.1575364
By:
- Karavaev, G. F.;
- Chernyshov, V. N.;
- Egunov, R. M.
Publication type:
Article
Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 581, doi. 10.1134/1.1575365
By:
- Galiev, G. B.;
- Karachevtseva, M. V.;
- Mokerov, V. G.;
- Strakhov, V. A.;
- Shkerdin, G. N.;
- Yaremenko, N. G.
Publication type:
Article
Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 586
By:
- Vorob’ev, L. E.;
- Danilov, S. N.;
- Zerova, V. L.;
- Firsov, D. A.
Publication type:
Article
Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 594, doi. 10.1134/1.1575367
By:
- Mynbaeva, M. G.;
- Lavrent’ev, A. A.;
- Kuznetsov, N. I.;
- Kuznetsov, A. N.;
- Mynbaev, K. D.;
- Lebedev, A. A.
Publication type:
Article
Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 598, doi. 10.1134/1.1575368
By:
- Zyubin, A. S.;
- Grigor’ev, F. V.;
- Dembovskiı, S. A.
Publication type:
Article
Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 604, doi. 10.1134/1.1575369
By:
- Ivlev, G. D.;
- Gatskevich, E. I.
Publication type:
Article
Detection of Hydrogen Impurity in Silicon Radiation Detectors.
Published in:
Semiconductors, 2003, v. 37, n. 5, p. 611, doi. 10.1134/1.1575370
By:
- Makarenko, L. F.;
- Korshunov, F. P.;
- Lastovskiı, S. B.;
- Zamyatin, N. I.
Publication type:
Article