Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 4

Results: 25

IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 399, doi. 10.1134/1.1568458

By:

Astrova, E. V.;
Perova, T. S.;
Tolmachev, V. A.;
Remenyuk, A. D.;
Vij, J.;
Moore, A.

Publication type:

Article

Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 396, doi. 10.1134/1.1568457

By:

Gnatyuk, V. A.;
Gorodnychenko, O. S.

Publication type:

Article

Photosensitive Structures Based on ZnIn[sub 2]Se[sub 4] Single Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 414, doi. 10.1134/1.1568460

By:

Vaipolin, A. A.;
Nikolaev, Yu. A.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.

Publication type:

Article

Effect of Lattice Deformation on Semiconducting Properties of CrSi[sub 2].

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 384, doi. 10.1134/1.1568455

By:

Krivosheeva, A. V.;
Shaposhnikov, V. L.;
Krivosheev, A. E.;
Filonov, A. B.;
Borisenko, V. E.

Publication type:

Article

Special Features of Electron Scattering at Al[sub x]Ga[sub 1 – ][sub x]As/AlAs(001) Interfaces.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 417, doi. 10.1134/1.1568461

By:

Grinyaev, S. N.;
Karavaev, G. F.;
Chernyshov, V. N.

Publication type:

Article

Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V[sub 2] Semiconductors.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 367, doi. 10.1134/1.1568451

By:

Magomedov, Ya. B.;
Aıdamirov, M. A.

Publication type:

Article

Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 370, doi. 10.1134/1.1568452

By:

Klimov, V. A.;
Timofeeva, I. O.;
Khanin, S. D.;
Shadrin, E. B.;
Il’inskiı, A. V.;
Silva-Andrade, F.

Publication type:

Article

Recombination Current Instability in Epitaxial p[sup +]–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 375, doi. 10.1134/1.1568453

By:

Muravskiı, B. S.;
Kulikov, O. N.;
Chernyi, V. N.

Publication type:

Article

Optical Reflection in (Pb[sub 0.78]Sn[sub 0.22])[sub 1 – ][sub x]In[sub x]Te Solid Solutions with a High Indium Content.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 380, doi. 10.1134/1.1568454

By:

Veıs, A. N.;
Nashchekin, A. V.

Publication type:

Article

The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 426, doi. 10.1134/1.1568462

By:

Nikolaev, D. V.;
Antonova, I. V.;
Naumova, O. V.;
Popov, V. P.;
Smagulova, S. A.

Publication type:

Article

Electrical Properties of InAs Irradiated with Protons.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 390, doi. 10.1134/1.1568456

By:

Brudnyı, V. N.;
Kolin, N. G.;
Potapov, A. I.

Publication type:

Article

Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 404, doi. 10.1134/1.1568459

By:

Lukjanitsa, V. V.

Publication type:

Article

The Effect of Internal Fields on Tunneling Current in Strained GaN/Al[sub x]Ga[sub 1 – ][sub x]N(0001) Structures.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 433, doi. 10.1134/1.1568463

By:

Grinyaev, S. N.;
Razzhuvalov, A. N.

Publication type:

Article

Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 439, doi. 10.1134/1.1568464

By:

Ardyshev, M. V.;
Ardyshev, V. M.

Publication type:

Article

Generation–Recombination Centers in CdTe:V.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 452, doi. 10.1134/1.1568467

By:

Kosyachenko, L. A.;
Paranchich, S. Yu.;
Tanasyuk, Yu. V.;
Sklyarchuk, V. M.;
Sklyarchuk, E. F.;
Maslyanchuk, E. L.;
Motushchuk, V. V.

Publication type:

Article

The Influence of Carbon on the Properties of Si/SiGe Heterostructures.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 443, doi. 10.1134/1.1568465

By:

Valakh, M. Ya.;
Dzhagan, V. N.;
Matveeva, L. A.;
Oberemok, A. S.;
Romanyuk, B. N.;
Yukhimchuk, V. A.

Publication type:

Article

Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 448, doi. 10.1134/1.1568466

By:

Alalykin, A. S.;
Krylov, P. N.;
Fedotova, I. V.;
Fedotov, A. B.

Publication type:

Article

Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 456, doi. 10.1134/1.1568468

By:

Litvinov, V. L.;
Demakov, K. D.;
Ageev, O. A.;
Svetlichny, A. M.;
Konakova, R. V.;
Lytvyn, P. M.;
Lytvyn, O. S.;
Milenin, V. V.

Publication type:

Article

Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469

By:

Tyschenko, I. E.;
Talochkin, A. B.;
Cherkov, A. G.;
Zhuravlev, K. S.;
Misiuk, A.;
Voelskow, M.;
Skorupa, W.

Publication type:

Article

Laser Ultrasonic Study of Porous Silicon Layers.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 468, doi. 10.1134/1.1568470

By:

Zharkiı, S. M.;
Karabutov, A. A.;
Pelivanov, I. M.;
Podymova, N. B.;
Timoshenko, V. Yu.

Publication type:

Article

Raman Spectroscopy of Amorphous Carbon Modified with Iron.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 473, doi. 10.1134/1.1568471

By:

Yastrebov, S. G.;
Ivanov-Omskiı, V. I.;
Dumitrache, F.;
Morosanu, C.

Publication type:

Article

Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 477, doi. 10.1134/1.1568472

By:

Goryachev, D. N.;
Belyakov, L. V.;
Sreseli, O. M.

Publication type:

Article

3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 482, doi. 10.1134/1.1568473

By:

Lebedev, A. A.;
Strel’chuk, A. M.;
Davydov, D. V.;
Savkina, N. S.;
Tregubova, A. S.;
Kuznetsov, A. N.;
Solov’ev, V. A.;
Poletaev, N. K.

Publication type:

Article

Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 485, doi. 10.1134/1.1568474

By:

Astakhova, A. P.;
Baranov, A. N.;
Viset, A.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stoyanov, N. D.;
Chernyaev, A.;
Yarekha, D. A.;
Yakovlev, Yu. P.

Publication type:

Article

Vladimir Ivanovich Ivanov-Omskiı (dedicated to his 70th birthday).

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 491

By:

Spitsyn, A.

Publication type:

Article