Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 4
Results: 25
Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition.
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- Semiconductors, 2003, v. 37, n. 4, p. 370, doi. 10.1134/1.1568452
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Optical Reflection in (Pb[sub 0.78]Sn[sub 0.22])[sub 1 – ][sub x]In[sub x]Te Solid Solutions with a High Indium Content.
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- Semiconductors, 2003, v. 37, n. 4, p. 380, doi. 10.1134/1.1568454
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Photosensitive Structures Based on ZnIn[sub 2]Se[sub 4] Single Crystals.
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- Semiconductors, 2003, v. 37, n. 4, p. 414, doi. 10.1134/1.1568460
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Special Features of Electron Scattering at Al[sub x]Ga[sub 1 – ][sub x]As/AlAs(001) Interfaces.
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- Semiconductors, 2003, v. 37, n. 4, p. 417, doi. 10.1134/1.1568461
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Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V[sub 2] Semiconductors.
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- Semiconductors, 2003, v. 37, n. 4, p. 367, doi. 10.1134/1.1568451
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The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons.
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- Semiconductors, 2003, v. 37, n. 4, p. 426, doi. 10.1134/1.1568462
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- Article
Recombination Current Instability in Epitaxial p[sup +]–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters.
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- Semiconductors, 2003, v. 37, n. 4, p. 375, doi. 10.1134/1.1568453
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Electrical Properties of InAs Irradiated with Protons.
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- Semiconductors, 2003, v. 37, n. 4, p. 390, doi. 10.1134/1.1568456
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Effect of Lattice Deformation on Semiconducting Properties of CrSi[sub 2].
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- Semiconductors, 2003, v. 37, n. 4, p. 384, doi. 10.1134/1.1568455
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IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon.
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- Semiconductors, 2003, v. 37, n. 4, p. 399, doi. 10.1134/1.1568458
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Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals.
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- Semiconductors, 2003, v. 37, n. 4, p. 396, doi. 10.1134/1.1568457
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- Article
Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon.
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- Semiconductors, 2003, v. 37, n. 4, p. 404, doi. 10.1134/1.1568459
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- Article
The Effect of Internal Fields on Tunneling Current in Strained GaN/Al[sub x]Ga[sub 1 – ][sub x]N(0001) Structures.
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- Semiconductors, 2003, v. 37, n. 4, p. 433, doi. 10.1134/1.1568463
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Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology.
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- Semiconductors, 2003, v. 37, n. 4, p. 439, doi. 10.1134/1.1568464
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The Influence of Carbon on the Properties of Si/SiGe Heterostructures.
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- Semiconductors, 2003, v. 37, n. 4, p. 443, doi. 10.1134/1.1568465
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Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate.
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- Semiconductors, 2003, v. 37, n. 4, p. 448, doi. 10.1134/1.1568466
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Generation–Recombination Centers in CdTe:V.
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- Semiconductors, 2003, v. 37, n. 4, p. 452, doi. 10.1134/1.1568467
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Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes.
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- Semiconductors, 2003, v. 37, n. 4, p. 456, doi. 10.1134/1.1568468
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Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
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- Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469
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Laser Ultrasonic Study of Porous Silicon Layers.
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- Semiconductors, 2003, v. 37, n. 4, p. 468, doi. 10.1134/1.1568470
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Raman Spectroscopy of Amorphous Carbon Modified with Iron.
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- Semiconductors, 2003, v. 37, n. 4, p. 473, doi. 10.1134/1.1568471
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Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source.
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- Semiconductors, 2003, v. 37, n. 4, p. 477, doi. 10.1134/1.1568472
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3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.
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- Semiconductors, 2003, v. 37, n. 4, p. 482, doi. 10.1134/1.1568473
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Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range.
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- Semiconductors, 2003, v. 37, n. 4, p. 485, doi. 10.1134/1.1568474
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Vladimir Ivanovich Ivanov-Omskiı (dedicated to his 70th birthday).
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- Semiconductors, 2003, v. 37, n. 4, p. 491
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