Effect of Gadolinium Impurity on Transmittance and Reflectance of Hg[sub 3]In[sub 2]Te[sub 6] Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 256, doi. 10.1134/1.1561513
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 3
Results: 23
1
2
Temperature Dependence of the Band Structure of 3C,2H,4H, and 6H SiC Polytypes.
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- Semiconductors, 2003, v. 37, n. 3, p. 239, doi. 10.1134/1.1561511
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- Publication type:
- Article
3
Kinetics of Growth of Surface Amorphous Layers under Irradiation of Silicon with Low-Energy Light Ions.
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- Semiconductors, 2003, v. 37, n. 3, p. 340, doi. 10.1134/1.1561530
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- Publication type:
- Article
4
Tunnel Emission of Electrons in Photo-Field Detectors and in an Auger Transistor in Very Strong Electric Fields.
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- Semiconductors, 2003, v. 37, n. 3, p. 354, doi. 10.1134/1.1561532
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- Publication type:
- Article
5
Structure and Optical Properties of C[sub 60] Films on Polymer Substrates.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 347, doi. 10.1134/1.1561531
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- Publication type:
- Article
6
Spectra of Photoluminescence from Silicon Nanocrystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 336, doi. 10.1134/1.1561529
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- Publication type:
- Article
7
Fine Structure of the Long-Wavelength Edge of Exciton–Phonon Absorption and Hyperbolic Excitons in Silicon Carbide of 6H Polytype.
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- Semiconductors, 2003, v. 37, n. 3, p. 249
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- Publication type:
- Article
8
Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 259, doi. 10.1134/1.1561514
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- Publication type:
- Article
9
Polyamidine Supramolecular Structures—a New Class of Photosensitive Polymeric Semiconductors.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 266, doi. 10.1134/1.1561516
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- Publication type:
- Article
10
Arrangement of Arsenic Atoms in the PbTe Lattice.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 263, doi. 10.1134/1.1561515
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- Publication type:
- Article
11
Thermal Transport of Charge and Polarization of 1.2-eV Luminescence Broad Band in Uniaxially Strained n-GaAs:Te.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 271, doi. 10.1134/1.1561517
- By:
- Publication type:
- Article
12
Thermoelectric Figure of Merit in Solid Solutions with Phonon Scattering by Off-Center Impurities.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 276, doi. 10.1134/1.1561518
- By:
- Publication type:
- Article
13
Effect of Annealing in Zn Vapor and Liquid Zn on Photoluminescence of High-Purity Polycrystalline ZnTe.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 283, doi. 10.1134/1.1561519
- By:
- Publication type:
- Article
14
The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 288, doi. 10.1134/1.1561520
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- Publication type:
- Article
15
Layer Structure of Zn[sub 1 – ][sub x]Cd[sub x]Se Films Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds on Cd[sub 0.92]Zn[sub 0.08]S(0001) Substrates.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 294, doi. 10.1134/1.1561521
- By:
- Publication type:
- Article
16
Properties of Shallow-Level D[sup –]-Centers in Polar Semiconductors.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 302, doi. 10.1134/1.1561522
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- Publication type:
- Article
17
On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 307, doi. 10.1134/1.1561523
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- Publication type:
- Article
18
Phonon Spectra of (GaAs)[sub n](Ga[sub 1 – ][sub x]Al[sub x]As)[sub m] Superlattices According to the Keating Model.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 312, doi. 10.1134/1.1561524
- By:
- Publication type:
- Article
19
Luminescence from ZnO Quantum Dots Deposited with Synthetic Opal.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 314, doi. 10.1134/1.1561525
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- Publication type:
- Article
20
Structure of Energy Quantum Levels in a Quantum Dot Shaped as an Oblate Body of Revolution.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 317, doi. 10.1134/1.1561526
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- Publication type:
- Article
21
Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 322, doi. 10.1134/1.1561527
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- Publication type:
- Article
22
Conductivity of One-Dimensional Semiconductor with Periodic Potential.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 329, doi. 10.1134/1.1561528
- By:
- Publication type:
- Article
23
Charge Transport in Superlattices with Low-Strength Barriers and the Problem of a Terahertz Bloch Oscillator.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 360, doi. 10.1134/1.1561533
- By:
- Publication type:
- Article