Charge Transport in Fe–p-InP Diode Structures.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 183, doi. 10.1134/1.1548662
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 2
Results: 24
1
2
Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced by Free Growth from a Gasdynamic Vapor Flow.
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- Semiconductors, 2003, v. 37, n. 2, p. 119, doi. 10.1134/1.1548649
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- Publication type:
- Article
3
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
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- Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
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- Publication type:
- Article
4
The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons and 65-MeV Protons.
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- Semiconductors, 2003, v. 37, n. 2, p. 140, doi. 10.1134/1.1548653
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- Publication type:
- Article
5
Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films.
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- Semiconductors, 2003, v. 37, n. 2, p. 131, doi. 10.1134/1.1548651
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- Publication type:
- Article
6
Self-Organization of Laser-Induced Point Defects at the Initial Stages of Inelastic Photodeformation in Germanium.
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- Semiconductors, 2003, v. 37, n. 2, p. 124, doi. 10.1134/1.1548650
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- Publication type:
- Article
7
Anomalies in Static and Dynamic Conductivity of Indium Monoselenide.
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- Semiconductors, 2003, v. 37, n. 2, p. 134, doi. 10.1134/1.1548652
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- Publication type:
- Article
8
On the Experimental Data Processing of Magnetoresistance Oscillations in Two-Dimensional Electron Gas.
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- Semiconductors, 2003, v. 37, n. 2, p. 160, doi. 10.1134/1.1548657
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- Publication type:
- Article
9
Electrical Properties of the p[sup +]-Bi[sub 2]Te[sub 3]–p-GaSe Isotype Heterostructure.
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- Semiconductors, 2003, v. 37, n. 2, p. 172, doi. 10.1134/1.1548660
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- Publication type:
- Article
10
Inversion of Conductivity Type in ZnSe Single Crystals Obtained by the Method of Free Growth.
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- Semiconductors, 2003, v. 37, n. 2, p. 145, doi. 10.1134/1.1548654
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- Publication type:
- Article
11
Specific Features of Determination of the Concentrations of Shallow-Level Impurities in Semiconductors from Analysis of Edge-Luminescence Spectra.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 148, doi. 10.1134/1.1548655
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- Publication type:
- Article
12
Classification of Frequencies of the Shubnikov–de Haas Oscillations in Layered Charge-Ordered Crystals under Magnetic Breakdown.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 156, doi. 10.1134/1.1548656
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- Publication type:
- Article
13
Rashba Effect in Inversion and Accumulation InAs layers.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 200, doi. 10.1134/1.1548665
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- Publication type:
- Article
14
Electrical Properties of FeIn[sub 2]Se[sub 4] Single Crystals.
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- Semiconductors, 2003, v. 37, n. 2, p. 165, doi. 10.1134/1.1548658
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- Publication type:
- Article
15
An Impurity Band in Hg[sub 3]In[sub 2]Te[sub 6] Crystals Doped with Silicon.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 168, doi. 10.1134/1.1548659
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- Publication type:
- Article
16
Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55μm) InGaAsP/InP Laser Diodes.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 233, doi. 10.1134/1.1548672
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- Publication type:
- Article
17
Fabrication and Properties of Photosensitive Structures Based on ZnIn[sub 2]S[sub 4] Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 178, doi. 10.1134/1.1548661
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- Publication type:
- Article
18
Barrier Formation in a Heterostructure Formed of Native Oxide and p-InSe. Electrical and Photoelectrical Properties.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 187, doi. 10.1134/1.1548663
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- Publication type:
- Article
19
Electrical Properties of Surface-Barrier Diodes Based on CdZnTe.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 227, doi. 10.1134/1.1548671
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- Publication type:
- Article
20
Photoluminescence from Germanium Quantum Wells and Quantum Dots in Silicon Grown by MBE at Low Temperature.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 207, doi. 10.1134/1.1548666
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- Publication type:
- Article
21
Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 210, doi. 10.1134/1.1548667
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- Publication type:
- Article
22
Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ–L Intervalley Transfer.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 215, doi. 10.1134/1.1548668
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- Publication type:
- Article
23
Synthesis of New Carbon–Nitrogen Nanoclusters by Annealing Diamond-Like Carbon Films in Nitrogen.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 220, doi. 10.1134/1.1548669
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- Publication type:
- Article
24
Effect of Thermal Annealing on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon Films.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 224, doi. 10.1134/1.1548670
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- Publication type:
- Article