Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 1

Results: 21

Electrical Activity of Dislocations and Point Defects of Deformation Origin in Cdx Hg1-x Te Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 6, doi. 10.1134/1.1538531

By:

Gasan-zade, S.G.;
Stary&icaron;, S.V.;
Strikha, M.V.;
Shepel'ski&icaron;, G.A.

Publication type:

Article

Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 112, doi. 10.1134/1.1538549

By:

Gordeev, N.Yu.;
Za&iccaron;tsev, S.V.;
Karachinsky, L.Ya.;
Kopchatov, V.I.;
Novikov, I.I.;
Ustinov, V.M.;
Kop'ev, P.S.

Publication type:

Article

Optical Transparency of Macroporous Silicon with Through Pores.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 57, doi. 10.1134/1.1538540

By:

Astrova, E.V.;
Korovin, L.I.;
Lang, I.G.;
Remenyuk, A.D.;
Shuman, V.B.

Publication type:

Article

Investigation of Magnetosensitivity of Transistor Structures with Diffusive Transport of Injected Charge Carriers.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 31, doi. 10.1134/1.1538535

By:

Glauberman, M.A.;
Yegorov, V.V.;
Kozel, V.V.;
Kanishcheva, N.A.

Publication type:

Article

Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 92, doi. 10.1134/1.1538545

By:

Naumova, O.V.;
Antonova, I.V.;
Popov, V.P.;
Stas', V.F.

Publication type:

Article

Structural-Phase Transformations in SiOx Films in the Course of Vacuum Heat Treatment.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 97, doi. 10.1134/1.1538546

By:

Lisovskyy, I.P.;
Indutnyy, I.Z.;
Gnennyy, B.N.;
Lytvyn, P.M.;
Mazunov, D.O.;
Oberemok, A.S.;
Sopinskyy, N.V.;
Shepelyavyi, P.E.

Publication type:

Article

Investigation of Electronic Transitions in Coupled-Quantum-Well Structures with a Built-in Electric Field by Photoreflectance Spectroscopy.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 77, doi. 10.1134/1.1538543

By:

Galiev, G.B.;
Kaminski&icaron;, V.É.;
Mokerov, V.G.;
Avakyants, L.P.;
Bokov, P.Yu.;
Chervyakov, A.V.;
Kul'bachinski&icaron;, V.A.

Publication type:

Article

Influence of Charged Defects on Detection of Electron Spin Resonance in Vitreous Chalcogenide Semiconductors.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 82, doi. 10.1134/1.1538544

By:

Ginzburg, L.P.

Publication type:

Article

Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 65, doi. 10.1134/1.1538541

By:

Strokan, N.B.;
Ivanov, A.M.;
Bo&icaron;ko, M.E.;
Savkina, N.S.;
Strel'chuk, A.M.;
Lebedev, A.A.;
Yakimova, R.

Publication type:

Article

Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 70, doi. 10.1134/1.1538542

By:

Kul'bachinskii, V.A.;
Lunin, R.A.;
Rogozin, V.A.;
Mokerov, V.G.;
Fedorov, Yu.V.;
Khabarov, Yu.V.;
Narumi, E.;
Kindo, K.;
de Visser, A.

Publication type:

Article

The Influence of Hydrogen Plasma on the Electroreflectance Spectrum and the Spectrum of Electron States of Porous Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 103, doi. 10.1134/1.1538547

By:

Venger, E.F.;
Holiney, R.Yu.;
Matveeva, L.A.;
Vasin, A.V.

Publication type:

Article

Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 28, doi. 10.1134/1.1538534

By:

Igamberdiev, Kh.T.;
Mamadalimov, A.T.;
Muminov, R.A.;
Usmanov, T.A.;
Shoyusupov, Sh.A.

Publication type:

Article

Photoelectric Properties of Heterojunctions between Silicon and Polyhomoconjugated Organometallic Compounds.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 53, doi. 10.1134/1.1538539

By:

Blinova, N.V.;
Krasnopeeva, E.L.;
Nikolaev, Yu.A.;
Osadchev, A.Yu.;
Rud, V.Yu.;
Rud, Yu.V.;
Terukov, E.I.;
Shamanin, V.V.

Publication type:

Article

Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p-n Structures with a Thin Multiplication Region.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 50

By:

Baranouski&icaron;, A.K.;
Kuchinski&icaron;, P.V.;
Savenok, E.D.

Publication type:

Article

Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation and the Structure of the Boundary Layer in the Si-SiO2 System.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 44, doi. 10.1134/1.1538537

By:

Krasnikov, G.Ya.;
Zaitsev, N.A.;
Matyushkin, I.V.

Publication type:

Article

Size Effect in Two-Photon Absorption of Recombination Radiation in Graded-Gap Alx Ga1-x As Solid Solutions.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 38, doi. 10.1134/1.1538536

By:

Kovalenko, V.F.;
Shutov, S.V.

Publication type:

Article

Multifrequency Kinks in Multifrequency External Fields.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 1, doi. 10.1134/1.1538530

By:

Polyakov, M.E.

Publication type:

Article

Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 20, doi. 10.1134/1.1538533

By:

Brudnyi, V.N.;
Peshev, V.V.

Publication type:

Article

Determination of Deformation Potential Constants for n- and p-Si from the Concentration Anharmonicity.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 15, doi. 10.1134/1.1538532

By:

Skvortsov, A.A.;
Litvinenko, O.V.;
Orlov, A.M.

Publication type:

Article

Tunneling Recombination in Silicon Avalanche Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 115

By:

Bulyarski&icaron;, S.V.;
Ionychev, V.K.;
Kuz'min, V.V.

Publication type:

Article

Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 108, doi. 10.1134/1.1538548

By:

Biryulin, Yu.F.;
Melenevskaya, E.Yu.;
Mikov, S.N.;
Orlov, S.E.;
Petrikov, V.D.;
Syckmanov, D.A.;
Zgonnik, V.N.

Publication type:

Article