Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 1
Results: 21
Structural-Phase Transformations in SiOx Films in the Course of Vacuum Heat Treatment.
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- Semiconductors, 2003, v. 37, n. 1, p. 97, doi. 10.1134/1.1538546
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Influence of Charged Defects on Detection of Electron Spin Resonance in Vitreous Chalcogenide Semiconductors.
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- Semiconductors, 2003, v. 37, n. 1, p. 82, doi. 10.1134/1.1538544
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Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation.
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- Semiconductors, 2003, v. 37, n. 1, p. 92, doi. 10.1134/1.1538545
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Investigation of Electronic Transitions in Coupled-Quantum-Well Structures with a Built-in Electric Field by Photoreflectance Spectroscopy.
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- Semiconductors, 2003, v. 37, n. 1, p. 77, doi. 10.1134/1.1538543
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Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation.
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- Semiconductors, 2003, v. 37, n. 1, p. 70, doi. 10.1134/1.1538542
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Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.
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- Semiconductors, 2003, v. 37, n. 1, p. 65, doi. 10.1134/1.1538541
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Electrical Activity of Dislocations and Point Defects of Deformation Origin in Cdx Hg1-x Te Crystals.
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- Semiconductors, 2003, v. 37, n. 1, p. 6, doi. 10.1134/1.1538531
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Optical Transparency of Macroporous Silicon with Through Pores.
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- Semiconductors, 2003, v. 37, n. 1, p. 57, doi. 10.1134/1.1538540
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Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation and the Structure of the Boundary Layer in the Si-SiO2 System.
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- Semiconductors, 2003, v. 37, n. 1, p. 44, doi. 10.1134/1.1538537
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Photoelectric Properties of Heterojunctions between Silicon and Polyhomoconjugated Organometallic Compounds.
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- Semiconductors, 2003, v. 37, n. 1, p. 53, doi. 10.1134/1.1538539
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Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p-n Structures with a Thin Multiplication Region.
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- Semiconductors, 2003, v. 37, n. 1, p. 50
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Size Effect in Two-Photon Absorption of Recombination Radiation in Graded-Gap Alx Ga1-x As Solid Solutions.
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- Semiconductors, 2003, v. 37, n. 1, p. 38, doi. 10.1134/1.1538536
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Investigation of Magnetosensitivity of Transistor Structures with Diffusive Transport of Injected Charge Carriers.
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- Semiconductors, 2003, v. 37, n. 1, p. 31, doi. 10.1134/1.1538535
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Multifrequency Kinks in Multifrequency External Fields.
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- Semiconductors, 2003, v. 37, n. 1, p. 1, doi. 10.1134/1.1538530
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Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs.
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- Semiconductors, 2003, v. 37, n. 1, p. 20, doi. 10.1134/1.1538533
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Determination of Deformation Potential Constants for n- and p-Si from the Concentration Anharmonicity.
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- Semiconductors, 2003, v. 37, n. 1, p. 15, doi. 10.1134/1.1538532
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Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene.
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- Semiconductors, 2003, v. 37, n. 1, p. 108, doi. 10.1134/1.1538548
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Tunneling Recombination in Silicon Avalanche Diodes.
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- Semiconductors, 2003, v. 37, n. 1, p. 115
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Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold.
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- Semiconductors, 2003, v. 37, n. 1, p. 112, doi. 10.1134/1.1538549
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The Influence of Hydrogen Plasma on the Electroreflectance Spectrum and the Spectrum of Electron States of Porous Silicon.
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- Semiconductors, 2003, v. 37, n. 1, p. 103, doi. 10.1134/1.1538547
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Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium.
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- Semiconductors, 2003, v. 37, n. 1, p. 28, doi. 10.1134/1.1538534
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